Method for forming semiconductor structure and semiconductor structure

Abstract

Embodiments of the present invention provide a method for forming a semiconductor structure and a semiconductor structure, wherein the method for forming a semiconductor structure includes: providing a substrate, forming a dielectric layer on the surface of the substrate; forming a mask layer on the surface of the dielectric layer, and forming a mask layer in the mask layer A first opening through the thickness of the mask layer; a first barrier layer is formed on the sidewall of the first opening, and the first barrier layer surrounds a second opening; a second barrier layer filling the second opening is formed; a first etching process is adopted , remove the first barrier layer and the second barrier layer until the first barrier layer or the second barrier layer is completely removed; remove the dielectric layer and part of the substrate exposed by the first opening to form a bit line contact opening, the bit line contact opening The bottom has a raised area and a sunken area, and the raised area and the sunken area have a height difference; the embodiment of the present invention aims to reduce the contact resistance of the bit line contact structure by increasing the bottom contact area of ​​the bit line contact opening.

Description

Method for forming semiconductor structure and semiconductor structure technical field The present invention relates to the field of semiconductor structure manufacturing, in particular to a method for forming a semiconductor structure and a semiconductor structure. Background technique As the line width of dynamic random access memory (Dynamic Random Access Memory, DRAM) gradually decreases small, the size of the bit line structure to be formed is reduced, resulting in a reduction in the size of the bit line contact structure that needs to be formed, while the size of the bit line contact structure is reduced. The reduction in the size of the contact structure leads to an increase in the contact resistance of the bit line contact structure, which affects the subsequent formation of the semiconductor structure. electrical properties, which in turn leads to a decrease in the yield of semiconductor structures. Under the premise that the size of the bit line contact s...

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Problems solved by technology

[0002] As the line width of DRAM (Dynamic Random Access Memory, DRAM) gradually decreases, the size of the bit line structure to be formed decreases, resulting in a decrease in the size of the bit line contact structure to be formed. The reduction in the size of the line contact structure leads to an increase in the contact resistance of the bit line contact structure, thereby affecting the electrical properties of the subsequently formed semiconductor structure, which in turn leads to a decrease in the yield of the semiconductor structure

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