Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of TMR chip

A chip and wafer technology, applied in the field of TMR chip preparation, can solve problems such as the influence of film adhesion and insufficient film, and achieve the effects of increasing wettability, increasing momentum, and improving compactness and adhesion.

Pending Publication Date: 2021-07-02
珠海多创科技有限公司
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inventors have found through actual production practice that it is not enough to improve the bonding force of the film layer only by cleaning the substrate. The stress treatment of the layer, these factors have an important influence on the bonding force of the film layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of TMR chip
  • Preparation method of TMR chip
  • Preparation method of TMR chip

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] figure 1 It is a flowchart of the TMR chip preparation method of the present invention, such as figure 1 Shown, the inventive method comprises the following steps:

[0036] S1. Wafer cleaning; the wafer of the TMR chip is a thermally oxidized silicon wafer, that is, 500nm silicon dioxide is grown on the smooth surface of ordinary single crystal silicon. The surface of the wafer is generally cleaned before leaving the factory, but it is still inevitably polluted by the air during packaging, transportation and unpacking, and particles and dust are adsorbed on the surface, and these particles and dust will cause the subsequent material to grow. Poor binding. In order to improve the bonding force of the film layer, the present invention first performs wafer cleaning in the TMR chip preparation process, mainly adopts the combination of organic solvent cleaning and deionized water cleaning, washes off the organic matter on the surface of the wafer with an organic solvent, a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A preparation method of a TMR chip comprises the following steps: wafer cleaning: alternately cleaning a wafer with an organic solvent and deionized water, then blow-drying the wafer with inert gas, and then drying the wafer; ion cleaning: performing ion cleaning on the wafer by adopting inert gas; conducting negative bias low-air-pressure magnetron sputtering: placing the wafer into a sputtering equipment cavity, applying negative bias of -200 V to -2000 V between the wafer and the equipment cavity through a bias power source, and magnetron sputtering is conducted under the air pressure condition lower than 0.3 pa; and annealing, wherein the annealing temperature is 250-400 DEG C. According to the method disclosed by the invention, from the overall situation of material growth in the preparation process of the TMR chip, factors influencing the binding force of a film layer in each link of film growth are considered, and a targeted solution is provided, so that the binding force of the film layer of the TMR chip is good, and the TMR chip can withstand various tests of subsequent micromachining links.

Description

technical field [0001] The invention belongs to the technical field of sensor chips, and in particular relates to a preparation method of a TMR chip. Background technique [0002] The sensor chip based on TMR technology has very good linear induction output under weak magnetic field, and has been widely used in many fields such as current detection and biomagnetic field. The core technology of the TMR chip is to grow a magnetic tunnel junction with tunnel resistance effect on the thermally oxidized silicon wafer through magnetron sputtering and other technologies. During this process, the film layer between the metal film layer and the thermally oxidized silicon substrate will be combine with each other. If the bonding force of the film layer is not good, there will be a de-filming phenomenon in the subsequent micro-processing of the chip, which will reduce the product yield, and even cause the product to be scrapped if it is serious. Therefore, a good film layer bonding fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/58
CPCC23C14/35C23C14/021C23C14/022C23C14/5806
Inventor 刘明关蒙萌胡忠强朱红艳朱家训
Owner 珠海多创科技有限公司