Enhanced HEMT device based on ferroelectric gate dielectric and manufacturing method thereof

Abstract

The invention discloses an enhanced HEMT device based on a ferroelectric gate medium and a manufacturing method thereof, and the method comprises the steps: preparing a heterostructure on a substrate, forming two-dimensional electron gas on the interface of the heterostructure, preparing a source electrode and a drain electrode on the heterostructure, and preparing an epsilon-phase gallium oxide layer on the surface of the heterostructure to form the ferroelectric gate medium, wherein the epsilon-phase gallium oxide layer is not communicated with the source electrode and the drain electrode at the same time; and then preparing a grid electrode on the upper surface of the epsilon-phase gallium oxide layer. An ultra-wide forbidden band semiconductor epsilon-Ga2O3 is used as a gate medium, based on strong spontaneous polarization and ferroelectric characteristics of epsilon-Ga2O3, the spontaneous polarization of epsilon-Ga2O3 along a c axis is opposite to a lower layer in a heterostructure, so that two-dimensional electron gas is exhausted, but the ferroelectric gate medium is not communicated with a source electrode and a drain electrode at the same time, so that the two-dimensional electron gas is exhausted; therefore, the two-dimensional hole gas on the upper interface of the epsilon-Ga2O3 / heterostructure does not contribute to source and drain current, and an enhanced HEMT device can be formed.

Description

technical field [0001] The invention relates to an enhanced HEMT device based on a ferroelectric gate dielectric and a manufacturing method thereof, belonging to the technical field of high electron mobility transistors. Background technique [0002] At present, the third-generation semiconductor materials represented by GaN have the characteristics of large band gap, high electron saturation drift rate, small dielectric constant and high breakdown field strength, and become important materials for high-voltage and high-power devices, which are very suitable for manufacturing High-frequency, high-speed, high-power, radiation-resistant, and highly-integrated electronic devices and circuits play a key role in power conversion markets in battery chargers, smartphones, computers, servers, automobiles, communications, lighting systems, and photovoltaics, It is of great significance to the development of the national economy. High Electron Mobility Transistor (HEMT) is one of the...

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Problems solved by technology

Enhanced devices can be realized by using P-GaN cap layer, gate F-implantation, trench gate, etc., but there are some disadvantages in the above methods. For example, it is difficult to obtain excellent device performance by using trench gate, because etching will It will cause damage to the material; high-energy F-implantation will cause damage to the channel under the gate; although the P-GaN cap layer method has been commercially used, it has the disadvantages of thickening the gate stack and weakening the gate control ability

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