Wide bandgap film laser detection element
A technology of laser detection and wide bandgap, which is applied in the field of wide bandgap thin film laser detection components, can solve the problems of narrow detection wavelength range, poor heat dissipation performance, and change in response rate, and achieve wide detection range of short-wave limit, high energy density, good linear effect
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Embodiment 1
[0037] A wide bandgap thin film laser detection element 100, such as figure 1 As shown, the laser detection element 100 includes: a single crystal substrate 110, Al 1-x Ga x N gradient film 120 , electrode 130 , protective layer 140 , lead wire 150 , thermal conductive adhesive 160 , and heat sink 170 . The single crystal substrate 110 is an AlN (0001) single crystal substrate, and the thickness of the single crystal substrate 110 is 0.2 mm. Al 1-x Ga x The N gradient film 120 serves as a photothermal sensitive layer.
[0038] Al 1-x Ga x The N gradient thin film 120 is grown obliquely epitaxially on a 5° off-cut AlN (0001) single crystal substrate 110 by metal organic chemical vapor deposition, etched by inductively coupled plasma to form a trapezoidal mesa, and the trapezoidal mesa ends at the single crystal substrate.
[0039] Al 1-x Ga x N gradient thin film 120 includes AlN buffer heat conduction layer 121, Al 1-x Ga x N (01-x Ga x The thickness of the N compo...
Embodiment 2
[0043] A wide bandgap thin film laser detection element 100, such as figure 1 As shown, the laser detection element 100 includes: a single crystal substrate 110, Al 1-x Ga x N gradient film 120 , electrode 130 , protective layer 140 , lead wire 150 , thermal conductive adhesive 160 , and heat sink 170 . The single crystal substrate 110 is a GaN (0001) single crystal substrate, and the thickness of the single crystal substrate 110 is 0.5 mm. Al 1-x Ga x The N gradient film 120 serves as a photothermal sensitive layer.
[0044] Al 1-x Ga x The N gradient film 120 is grown obliquely epitaxially on a 20° off-cut AlN (0001) single crystal substrate 110 by metal-organic chemical vapor deposition, etched by inductively coupled plasma to form a trapezoidal mesa, and the trapezoidal mesa ends at the single crystal substrate.
[0045] Al 1-x Ga x N gradient thin film 120 includes AlN buffer heat conduction layer 121, Al 1-x Ga x N (01-x Ga x The thickness of the N compositio...
Embodiment 3
[0049] A wide bandgap thin film laser detection element 100, such as figure 1 As shown, the laser detection element 100 includes: a single crystal substrate 110, Al 1-x Ga x N gradient film 120 , electrode 130 , protective layer 140 , lead wire 150 , thermal conductive adhesive 160 , and heat sink 170 . The single crystal substrate 110 is a SiC (0001) single crystal substrate, and the thickness of the single crystal substrate 110 is 1.0 mm. Al 1-x Ga x The N gradient film 120 serves as a photothermal sensitive layer.
[0050] Al 1-x Ga x The N gradient film 120 is grown obliquely epitaxially on a 45° off-cut SiC (0001) single crystal substrate 110 by metal-organic chemical vapor deposition, etched by inductively coupled plasma to form a trapezoidal mesa, and the trapezoidal mesa ends at the single crystal substrate.
[0051] Al 1-x Ga x N gradient thin film 120 includes AlN buffer heat conduction layer 121, Al 1-x Ga x N (01-x Ga x The thickness of the N compositio...
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