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Disilane preparation equipment and disilane preparation method

A technology of disilane and equipment is applied in the field of preparation equipment and preparation of disilane, and can solve the problems of low industrial application value and low conversion rate, etc.

Pending Publication Date: 2021-07-09
CHINA SILICON CORP LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conversion rate of this method is low, and the process is easy to produce brown-yellow amorphous silicon solid matter, and the industrial application value is not high

Method used

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  • Disilane preparation equipment and disilane preparation method
  • Disilane preparation equipment and disilane preparation method
  • Disilane preparation equipment and disilane preparation method

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Embodiment Construction

[0039] Embodiments of the invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0040] A disilane production apparatus 1000 according to an embodiment of the present invention will be described below with reference to the accompanying drawings. Such as Figure 1 to Figure 3 As shown, the disilane production equipment 1000 according to the embodiment of the present invention includes a heating device 100 , a catalytic dehydrogenation reactor 200 , a cryogenic device 300 , a light removal separation tower 400 , an adsorption device 500 and a weight removal separation tower 600 .

[0041] The heating device 100 has a first air inlet 110 and a first air outlet 120 . The catalytic dehydrogenation reactor 200 has a second gas inlet 210 and a sec...

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Abstract

The invention provides disilane preparation equipment and a disilane preparation method. The disilane preparation equipment provided by an embodiment of the invention comprises: a heating device, wherein the heating device is provided with a first gas inlet and a first gas outlet; a catalytic dehydrogenation reactor, which is provided with a second gas inlet and a second gas outlet; a cryogenic device, which is provided with a third gas inlet, a third liquid outlet and a third waste gas outlet; a light component removal and separation tower, which is provided with a fourth feeding hole, a fourth gas outlet and a fourth liquid outlet; an adsorption device, which is provided with a fifth feeding hole and a fifth discharging hole; and a heavy component removal and separation tower, which is provided with a sixth feeding hole, a sixth gas outlet and a sixth liquid outlet. Therefore, the disilane preparation equipment provided by the embodiment of the invention has the advantages of high disilane conversion rate, high production efficiency, resource waste reduction, production cost reduction and the like.

Description

technical field [0001] The invention relates to the technical field of chemical industry, in particular to a disilane preparation equipment and preparation method. Background technique [0002] Disilane (Si2H6) is an advanced special gas for film formation. Compared with other silicon source gases in the thin film deposition process, it has the characteristics of lower deposition temperature, faster film formation rate, and higher film uniformity. Currently, many advanced integrated circuits Chip manufacturing plants have begun to be widely used. In the related art, there are mainly three kinds of existing technologies for producing disilane: (1) Synthetic method of magnesium silicide and ammonium chloride. This method uses magnesium silicide and ammonium chloride as raw materials, generates silane in the presence of liquid ammonia and a catalyst, and produces disilane gas as a by-product, so the proportion of disilane is small and the production efficiency is low. (2) Hal...

Claims

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Application Information

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IPC IPC(8): B01J8/06C01B33/04
CPCB01J8/067C01B33/04
Inventor 赵雄刘见华万烨严大洲郭树虎常欣
Owner CHINA SILICON CORP LTD
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