Unlock instant, AI-driven research and patent intelligence for your innovation.

Supply Voltage Output IC for Magnetic Sensing

A power supply voltage, integrated circuit technology, applied in the field of power supply voltage output integrated circuits, can solve problems such as large circuit area, and achieve the effect of strong portability

Active Publication Date: 2022-05-17
东方微电科技(武汉)有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the technical problems existing in the prior art, the present invention provides a power supply voltage output integrated circuit for magnetic sensing, which solves the problem of large circuit area of ​​the charge pump integrated circuit in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Supply Voltage Output IC for Magnetic Sensing
  • Supply Voltage Output IC for Magnetic Sensing
  • Supply Voltage Output IC for Magnetic Sensing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Embodiment 1 of the present invention provides an embodiment of a power supply voltage output integrated circuit for magnetic sensing, combined with figure 1 It can be seen that the embodiment of the power supply voltage output integrated circuit includes:

[0033] Four pmos FETs, four nmos FETs, two charging and discharging memories with equal energy storage capacity, clock signal input terminal CLK, voltage input terminal VDD, ground terminal VSS and voltage output terminal VOUT; four pmos FETs are MP1, MP2, MP3 and MP4, the four nmos FETs are MN1, MN2, MNi1 and MNi2.

[0034] The clock signal input terminal CLK is respectively connected to the gates of MP1 , MP2 , MP3 , MN1 , MN2 , MNi1 and MNi2 and the drain of MP4 .

[0035] The ground terminal VSS is respectively connected to the sources of MN1, MN2 and MP3, the substrates of MN1, MN2 and MP3, and the source, substrate and gate of MP4.

[0036] The voltage input terminal VDD is connected to the substrate and dra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a power supply voltage output integrated circuit for magnetic sensing, the clock signal input end is respectively connected with the gates of MP1, MP2, MP3, MN1, MN2, MNi1 and MNi2 and the drain of MP4; the ground end is connected with MN1 , the source and substrate of MN2 and MP3 and the source, substrate and gate of MP4 are connected respectively; The drain of MN1 is connected, and the other end of the first charging and discharging memory is connected to the drains of MP2 and MNi1 respectively; after the substrate and source of MP2 are connected, they are respectively connected to the drain of MN2 and one end of the second charging and discharging memory. 2. The other end of the charge-discharge memory is connected to the drains of MP3 and MNi2 respectively; the voltage output end is connected to the source and substrate of MNi1 and MNi2 respectively, and a capacitor is connected in series between the ground end and the voltage output end; only eight have The source device is integrated, and only one driving clock is input in the working condition, which saves area and power consumption, and the circuit is simple and highly integrated.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a power supply voltage output integrated circuit for magnetic sensing. Background technique [0002] With the development of semiconductor technology, the operating voltage of the device is getting lower and lower. For the memory, the power supply voltage required for its operation is continuously reduced to below 2.5V or 1.8V. However, the programming and erasing voltage of the memory will be much higher than the power supply voltage. At this time, a charge pump circuit is usually required to convert the power supply voltage to the required programming voltage or erasing voltage. In integrated circuits, negative voltages may be required. [0003] In an integrated circuit, the smaller the area of ​​the circuit, the higher the integration of the chip and the lower the cost, so reducing the circuit area on the basis of the existing charge pump circuit is a problem that needs att...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/625
CPCG05F1/625
Inventor 吴建得叶海洋秦明
Owner 东方微电科技(武汉)有限公司