Growth method of light-emitting diode epitaxial wafer

Abstract

The invention provides a growth method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: providing a substrate; and sequentially growing an N-type layer, an active layer and a P-type layer on the substrate, wherein the active layer comprises a plurality of InGaN quantum well layers and GaN quantum barrier layers which are periodically and alternately grown, wherein when each InGaN quantum well layer of the active layer grows, ammonia gas is introduced into the reaction chamber at a low speed, and the flow of the ammonia gas introduced into the reaction chamber is controlled to be gradually increased and then gradually reduced. According to the growth method, the formation of quantum dots in the InGaN quantum well layer can be increased, so that the probability of non-radiative recombination of electrons and holes is greatly reduced, and the internal quantum luminous efficiency of an LED can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, an LED epitaxial wafer includes a substrate and an N-type layer, an active layer and a P-type layer stacked on the substrate in sequence. Wherein, the N-type layer is used to prov...

AI Technical Summary

Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer

Compressive stress will generate a piezoelectric polarization electric field, which reduces the overlap of electron and hole wave functions, resulting in a tilt of the energy band of the multi-quantum well layer, resulting in a decrease in internal quantum efficiency, thereby affecting LED luminous efficiency.

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