System and method for testing SOA characteristics of MOS transistor
A technology of MOS tube and characteristics, which is applied in the system field of testing MOS tube SOA characteristics, and can solve the problems of poor accuracy of test results
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Embodiment 1
[0053] see figure 1 , figure 1 It is a schematic structural diagram of a system for testing the SOA characteristics of a MOS transistor provided in the embodiment of the present application. Depend on figure 1 It can be seen that the system for testing the SOA characteristics of the MOS transistors in this embodiment mainly includes: a PC controller, an oscilloscope, a tested MOS transistor, a power supply, and an electronic load instrument. The PC controller is connected to the electronic load, power supply and oscilloscope through the USB-GPIB cable respectively. The input terminal of the MOS tube under test is connected to the power supply, and the power supply adopts a DC power supply, that is, DC Source. The DC Source supplies power to the MOS tube under test according to the instructions of the PC controller, thereby performing a full-load power-on SOA test. The output terminal of the MOS tube is connected to the electronic load meter through the load line, and the el...
Embodiment 2
[0067] exist Figure 1-Figure 4 Based on the example shown see Figure 5 , Figure 5 It is a schematic flowchart of a method for testing the SOA characteristics of a MOS transistor provided in the embodiment of the present application. Depend on Figure 5 It can be seen that the method for testing the SOA characteristics of the MOS transistor in this embodiment mainly includes the following processes:
[0068] S1: Get the SOA SPEC data of the MOS tube.
[0069] Obtain and store the SOA SPEC data of the MOS tube, which is convenient for subsequent comparison with the test data, so as to determine the SOA characteristics of the current MOS tube.
[0070] S2: According to the obtained command and the SOA SPEC data of the MOS transistor, perform a full-load power-on SOA test on the tested MOS transistor.
[0071] Specifically, step S2 includes the following processes:
[0072] S21: Grab V according to the acquired command VDS Screenshots at the start and end of the trigger ...
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