Silicon-based liquid crystal panel and design method and preparation method thereof

Abstract

The invention relates to a silicon-based liquid crystal display panel and a design method and a preparation method thereof. an upper substrate, a lower substrate and a liquid crystal box of the silicon-based liquid crystal display panel are respectively designed by obtaining a target index of the silicon-based liquid crystal display panel and decomposing the target index, and finally an antireflection film is formed on the upper substrate through evaporation, the light utilization rate of the silicon-based liquid crystal panel is comprehensively and effectively improved in a mode of forming the high-reflection film on the lower substrate through evaporation, so that the light utilization rate of a product using the silicon-based liquid crystal panel is improved, and the application range of the silicon-based liquid crystal panel is favorably widened; according to the preparation method of the silicon-based liquid crystal panel, coating treatment is carried out before packaging of the silicon substrate, the structure of an existing silicon substrate does not need to be changed, the preparation method is simple and easy to implement, and the silicon-based liquid crystal panel with the higher light utilization rate can be obtained with the low production cost.

Description

technical field [0001] The invention relates to the technical field of silicon-based liquid crystal panel manufacturing, in particular to a silicon-based liquid crystal panel and a design method and a preparation method thereof. Background technique [0002] The light utilization efficiency of the existing LCOS wafer substrate (silicon substrate) is relatively low, ranging from 70% to 95%. The upper substrate of the existing liquid crystal on silicon panel is mainly ITO glass. The thickness of the ITO glass and the ITO material on the top lead to the difference in transmittance, and the transmittance is mainly between 75% and 90%. The lower substrate is mainly a silicon wafer. The difference between the CMOS circuit on the silicon wafer and the reflective aluminum layer will lead to inconsistent reflectivity, and the reflectivity is mainly between 70% and 95%. Generally speaking, the existing liquid crystal on silicon panel The light utilization rate is between 50% and 85%,...

AI Technical Summary

Problems solved by technology

The upper substrate of the existing liquid crystal on silicon panel is mainly ITO glass. The thickness of the ITO glass and the ITO material on the top lead to the difference in transmittance, and the transmittance is mainly between 75% and 90%. The lower substrate is mainly a silicon wafer. The difference between the CMOS circuit on the silicon wafer and the reflective aluminum layer will lead to inconsistent reflectivity, and the reflectivity is mainly between 70% and 95%. Generally speaking, the existing liquid crystal on silicon panel The light utilization rate is between 50% and 85%, with a large difference

The light utilization rate of the existing liquid crystal on silicon panel is affected by the pixel size and pixel gap on the silicon substrate, but it is mainly limited by the manufacturing process capability of the silicon substrate and the financial pressure of developing the mask plate.

[0003] That is to say, the manufacturing process capability of the silicon substrate of the existing liquid crystal on silicon panel is insufficient, and the manufacturing cost is high, which leads to the inability to obtain a liquid crystal on silicon panel with high light utilization rate while spending a relatively high production cost

Moreover, due to the low light utilization efficiency of the existing liquid crystal on silicon panel, its corresponding scope of application is relatively limited.

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