Electroplating process of silicon wafer structure with TSV metal columns

Abstract

The invention relates to the technical field of semiconductors, and particularly relates to an electroplating process of a silicon wafer structure with TSV metal columns. An electroplating process method comprises the following steps: forming a through hole in a silicon wafer, and manufacturing a passivation layer in the through hole and on the surface of the silicon wafer; manufacturing seed layers for electroplating on the front and back surfaces of the silicon wafer; placing the silicon wafer in an electroplating cavity, spraying an electroplating liquid from one surface of the silicon wafer, and applying a suction force to the other surface of the silicon wafer so that the electroplating liquid passes through the through holes in the surface of the silicon wafer; and applying a current to the surface of the silicon wafer, depositing metal in the through hole till that metal is deposited in the through hole and on the two surfaces of the silicon wafer, polishing the front surface and the back surface of the silicon wafer, and acquiring the silicon wafer structure with the TSV metal columns. According to the invention, a through hole process is adopted to replace an original blind hole process, the conduction of the deep TSV through hole is realized by manufacturing the seed layers on the two sides, and then the replacement of the electroplating liquid in the TSV is accelerated by spraying the electroplating liquid on the front surface of the adapter plate and absorbing the electroplating liquid on the back surface of the adapter plate so that the side wall electroplating of the deep hole is realized.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to an electroplating process of a silicon silicon structure with a TSV metal column. Background technique [0002] The millimeter wave radio technology has developed rapidly in the semiconductor industry, and its fields are widely used in high-speed data communication, automotive radar, airborne missile tracking system and spatial spectroscopy and imaging. The 2018 market reached 1.1 billion US dollars and became an emerging industry. The new application has made new requirements for the electrical performance, compact structure and system reliability of the product. For wireless transmitting and receiving systems, it is still not integrated to the same chip (SOC), so different chips need to include a radio frequency unit. , Filters, power amplifiers, etc. Integrate functions that implement transmit and receive signals in a separate system. [0003] However, the ra...

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Problems solved by technology

[0003] However, the RF chip needs to be grounded and interconnected at the bottom of the adapter board, so it is necessary to dig a cavity on the adapter board to embed the RF chip and the auxiliary chip into the adapter board. Some chips are thicker, and the thickness of the adapter board There are also higher requirements, but the adapter board is often limited by the depth of TSV technology and cannot be made too thick, which greatly limits the application range of RF modules

The main reason why TSV cannot be made too deep is that the bottom of the deep hole TSV is a blind hole structure, it is difficult to enter the chemical solution, and it is difficult to exchange the chemical solution during electroplating, which is not conducive to the electroplating.

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