Manufacturing process of semi-floating gate memory and semi-floating gate memory

Abstract

The invention provides a manufacturing process of a semi-floating gate memory. The manufacturing process comprises the following steps: providing a substrate; generating a semi-floating gate well region with a first U-shaped groove structure on the upper surface of the substrate, wherein the bottom of the first U-shaped groove structure is in contact with the substrate; generating a first gate dielectric layer on the semi-floating gate well region; forming a second U-shaped groove structure in the first gate dielectric layer in the direction of the substrate and extending to the semi-floating gate well region, wherein the second U-shaped groove structure and the first U-shaped groove structure are arranged at an interval; and generating a floating gate on the surfaces of the first gate dielectric layer and the second U-shaped groove structure, wherein the floating gate covers the first gate dielectric layer and fills the first U-shaped groove structure and the second U-shaped groove structure, and the floating gate and the semi-floating gate well region are connected at the second U-shaped groove to form a diode structure. According to the invention, the channel region and the diode region of the semi-floating gate transistor are formed by constructing the U-shaped groove structure; and integration density is increased and a charge writing speed is increased too, meanwhile, large-area production can be realized, and the process is compatible with the existing manufacturing process. In addition, the invention also provides the semi-floating gate memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a manufacturing process of a half-floating gate memory and the half-floating gate memory. Background technique [0002] Today's mainstream storage technology is divided into two categories: volatile storage technology and non-volatile storage technology. [0003] Among them, the volatile storage technologies are mainly Static Random-Access Memory (SRAM) and Dynamic Random Access Memory (DRAM). Volatile memory has a write speed of nanometers, but its data retention capability is only milliseconds, making it only used in limited storage areas such as caches. [0004] For non-volatile storage technologies, such as flash memory technology, its data retention capability can reach 10 years, but relatively slow write operations greatly limit its application in the cache field. Therefore, in this context, a semi-floating gate memory based on two-dimensional semiconductor ...

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Problems solved by technology

However, there is no mention of a semi-floating gate memory that can increase the integration density, increase the charge writing speed, and at the same time be able to produce in a large area and be compatible with existing manufacturing processes

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