Silicon carbide substrate, silicon carbide device and substrate thinning method thereof

Abstract

The invention provides a silicon carbide substrate, a silicon carbide device and a substrate thinning method thereof. The method comprises the following steps: providing a first substrate, wherein the first substrate is a silicon carbide substrate and is provided with a silicon surface and a carbon surface which are opposite to each other; forming a silicon carbide device on the silicon surface of the first substrate, and forming a protective layer on the silicon carbide device; performing ion implantation on the carbon surface of the first substrate; providing a second substrate; bonding the first substrate and the second substrate after ion implantation; carrying out high-temperature annealing on the first substrate and the second substrate which are bonded to enable ions injected into the first substrate to be combined into gas; and carrying out separation at the ion implantation position of the first substrate to obtain the thinned first substrate and the separated first substrate. According to the substrate thinning method in the embodiment of the invention, the substrate of the silicon carbide device does not need to be ground, the substrate thinning method is easier to operate, the first substrate separated after the substrate is thinned can be reused, and the economic benefit is higher.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular to a silicon carbide substrate, a silicon carbide device and a substrate thinning method thereof. Background technique [0002] With the continuous development of semiconductor technology, silicon carbide (Silicon Carbide, SiC) technology has become a cutting-edge technology in the semiconductor industry. In order to improve the performance of silicon carbide devices, it is necessary to thin the silicon carbide substrate. [0003] In the related art, a grinding device is usually used to grind the back surface of the silicon carbide substrate, so as to thin the silicon carbide substrate to a specified thickness. However, the Mohs hardness of the silicon carbide substrate is very high. When the back surface of the silicon carbide substrate is ground by a grinding device, the grinding device will generate a large amount of wear, and the ground silicon carbide subs...

AI Technical Summary

Problems solved by technology

However, the Mohs hardness of the silicon carbide substrate is very high. When the back surface of the silicon carbide substrate is ground by a grinding device, the grinding device will generate a large amount of wear, and the ground silicon carbide substrate is completely wasted. , less economical

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