Lithography machine matching method based on BFGS quasi-Newton-interior point algorithm

A technology of interior point algorithm and matching method, which is applied in the field of lithography machine, can solve problems affecting iteration speed and information loss, and achieve the effect of accelerating iteration speed, reducing CD error, and improving matching efficiency

Active Publication Date: 2021-07-30
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, in the process of matching by adjusting the light source of the lithography machine, the parameters of the light source can only be adjusted within a limited range, and the Newton method or the least square method used in the aforementioned technology is usually used to solve unconstrained optimization problems , there is a possibility of information loss during the algorithm iteration, which affects the iteration speed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithography machine matching method based on BFGS quasi-Newton-interior point algorithm
  • Lithography machine matching method based on BFGS quasi-Newton-interior point algorithm
  • Lithography machine matching method based on BFGS quasi-Newton-interior point algorithm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0053] This embodiment refers to the intensity distribution of the illumination light source of the lithography machine as figure 2 As shown, the brightness value of the white area is 1, and the brightness value of the black area is 0. The test mask target pattern used is image 3 In the shown one-dimensional through-pitch line-space pattern mask, the line width of the mask pattern is 60nm, the type is a binary mask, the transmittance of the white area is 1, and the transmittance of the black area is 0. The period of the mask pattern is 160nm, 180nm, 200nm, ..., 1040nm, a total of 45, that is, M=45, and the horizontal line segment marked in the figure is the cross-sectional position of the calculated aerial image CD. Both the reference lithography machine and the to-be-matched lithograp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a photoetching machine matching method based on a BFGS quasi-Newton-interior point algorithm. According to the method, the key size of a space image is used as a parameter for describing the imaging performance of the photoetching machine, a photoetching machine illumination light source described in a parameterized mode and the numerical aperture of a projection objective lens are optimized through a BFGS quasi-Newton-interior point algorithm, and high-efficiency matching of the photoetching machine is achieved. According to the method, constraints are added to the optimization problem by utilizing the barrier function, iteration information is effectively utilized, the matching method of the non-free illumination system photoetching machine is improved, and the matching precision and efficiency of an existing method are improved. The method is suitable for matching between immersion lithography machines with non-free illumination systems.

Description

technical field [0001] The invention relates to a lithography machine, in particular to a lithography machine matching method based on a BFGS quasi-Newton-interior point algorithm. Background technique [0002] Photolithography is the core process of integrated circuit manufacturing. In order to reduce economic and time costs, lithography processes are usually developed on reference lithography machines. The new photolithography process needs to be applied to the production line when the chip is mass-produced. Usually there are multiple lithography machines on a production line, and their models and suppliers may be different, and the performance of different types of lithography machines generally varies. Even lithography machines of the same model may have large differences in lithography performance including imaging quality due to slight differences in their hardware indicators. Differences between different lithography machines will lead to differences in their perfo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G03F1/36G03F1/00
CPCG03F7/705G03F7/70508G03F1/36G03F1/00
Inventor 陈俞光李思坤唐明胡少博王向朝
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products