A high voltage resistant ESD protection device, structure and preparation method
An ESD protection and high-voltage technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, and electrical solid-state devices. The effect of high grade and simple preparation method
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0041] This embodiment provides a high-voltage ESD protection structure, the high-voltage ESD protection structure at least includes: an ESD protection module 1 and a protection ring 2;
[0042] The ESD protection module 1 includes: a P-type substrate 11, a deep N-well 12, a P-well 13, two first N-wells 14, a first P+ implantation region 15, two N+ implantation regions 16, an isolation region 110 and two a second P+ implantation region 17;
[0043] like figure 1 As shown, the deep N well 12 is located above the P-type substrate 11 ; the deep N well 12 is smaller than the size of the P-type substrate 11 .
[0044] Specifically, the material of the P-type substrate 11 includes, but is not limited to, sapphire, Si, and SiC, which will not be repeated here.
[0045] like figure 1 As shown, the P-well 13 is located between two first N-wells 14, and the P-well 13 is located within the deep N-well 12; the first N-well 14 is located between the deep N-well 12 and the deep N-well 12...
Embodiment 2
[0059] This embodiment provides a preparation method of a high-voltage ESD protection structure, such as figure 1 As shown, the preparation method of the high-voltage ESD protection structure at least includes:
[0060] S1) A P-type substrate 11 is provided, and a deep N-well 12 is formed in the P-type substrate 11 .
[0061] Specifically, a P-type substrate 11 is provided, and a deep N-well 12 is formed in the one P-type substrate 11 . In this embodiment, since the deep N well 12 is relatively deep, the deep N well 12 is obtained by means of diffusion, and ion implantation may also be used in practical use, which will not be described in detail here.
[0062] S2) A P well 13 is formed in the deep N well 12; two first N wells 14 are formed on both sides of the P well 13, and each first N well 14 is located on the P-type substrate 11 and the inside the deep N well 12 .
[0063] Specifically, the first N-well 14 and the P-well 13 are formed in the deep N-well 12 by means incl...
Embodiment 3
[0072] like figure 2 As shown, this embodiment discloses a high-voltage ESD protection device. The high-voltage ESD protection device includes: a plurality of protection rings 2 and a plurality of high-voltage ESD protection modules 1; On the outer periphery, each guard ring 2 is formed as a whole by connecting with each other.
[0073] The ESD protection module 1 includes a first diode D1 and a second diode D2; the first diode D1 and the second diode D2 have a common cathode 19; the protection modules are connected in parallel with each other.
[0074] It should be noted that the high-voltage ESD protection module 1 may affect other devices, such as electromagnetic interference and the like. Therefore, a guard ring 2 needs to be designed around the module. Since the parasitic effect of the oversized guard ring 2 is difficult to ignore, in this design, multiple guard rings 2 are used to separate multiple high-voltage ESD protection modules 1, and they are connected by inter...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More