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A self-pulsation and continuous output silicon-based integrated semiconductor laser based on fano resonance and its preparation method

A laser and self-pulsation technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of low coupling efficiency and large transmission loss, and achieve high injection efficiency, large process tolerance, and high efficiency.

Active Publication Date: 2022-04-22
SHANDONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon-based integrated lasers that can generate self-pulses are rarely reported, highlighting the research value and application prospects of the present invention
[0006] In the integration process, the coupling efficiency from the active area to the passive area is generally low, and the transmission loss is large, so it is necessary to design a coupling structure with a long size

Method used

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  • A self-pulsation and continuous output silicon-based integrated semiconductor laser based on fano resonance and its preparation method
  • A self-pulsation and continuous output silicon-based integrated semiconductor laser based on fano resonance and its preparation method
  • A self-pulsation and continuous output silicon-based integrated semiconductor laser based on fano resonance and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0078] A silicon-based integrated laser with self-pulsing and continuous output, such as figure 1 As shown, the laser includes a substrate and a Bragg mirror 1, a first tapered waveguide 2, a III-V multi-quantum well active region 3, and a second tapered waveguide 4 arranged on the substrate from left to right And Fano reflector, substrate adopts SOI substrate in the present embodiment, and SOI substrate comprises SiO 2 Substrate 9 and silicon waveguide layer 10.

[0079] The Bragg reflector 1 is connected with the narrow end of the first tapered waveguide 2, and the wide end of the first tapered waveguide 2 is connected with one end of the III-V family multi-quantum well active region 3, and the III-V group multi-quantum well The other end of the active region 3 is connected to the wide end of the second tapered waveguide 4, and the narrow end of the second tapered waveguide 4 is connected to the Fano mirror;

[0080] The Fano reflector comprises a straight waveguide 5 and ...

Embodiment 2

[0088] According to the silicon-based integrated laser with self-pulse and continuous output provided in Embodiment 1, the difference lies in:

[0089] Such as Figure 1a As shown, the distance between the straight waveguide 5 and the microring is 0.1 μm; the width of the straight waveguide 5 is 0.4 μm; the outer diameter of the microring is 5 μm, and the inner diameter of the microring is 4.5 μm.

[0090] The partially permeable unit 8 includes two air holes, and the two air holes are arranged on both sides of the vertical line from the center of the microring waveguide 6 to the straight waveguide 5; and the distances from the two air holes to the vertical line are different.

[0091] This design is mainly to obtain the optimal Fano reflection spectrum, which maximizes the additional phase shift Δφ, thereby maximizing the symmetry and reflection intensity of the reflection spectrum.

[0092] Introduce a radius r into the straight waveguide 5 1 and r 2 After two air holes, ...

Embodiment 3

[0121] A silicon-based integrated laser with self-pulse and continuous output provided according to Embodiment 2, the difference is that:

[0122] The shape of the air hole is ellipse, the side length of the long axis of the ellipse is 0.22-0.3 μm, and the side length of the short axis is 0.16-0.28 μm.

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Abstract

The invention relates to a self-pulse and continuous output silicon-based integrated semiconductor laser based on Fano resonance and a preparation method thereof. The laser includes a substrate, a Bragg mirror arranged on the substrate from left to right, and a first cone Waveguide, III-V family multiple quantum well active region, second tapered waveguide and Fano mirror; Fano mirror includes straight waveguide and micro-ring waveguide; the micro-ring waveguide is covered with graphene to form saturated absorption; through the micro-ring waveguide The partly transparent unit is designed in the coupling area with the straight waveguide to generate Fano resonance, and realize two working modes of self-pulse and continuous in the C-band of 1550nm optical communication, which can be applied to multiple application scenarios; the central wavelength is at 1550nm under continuous output, and the single-mode performance is good ; In the self-pulse mode, as the current increases, the pulse repetition rate reaches GHz, with a high pulse repetition rate. The preparation method is compatible with conventional processes and is suitable for low-cost and high-efficiency preparation.

Description

technical field [0001] The invention relates to a self-pulse and continuous output silicon-based integrated semiconductor laser based on Fano resonance and a preparation method thereof, belonging to the field of semiconductor lasers. Background technique [0002] Existing laser pulses are mainly generated by mode-locking techniques, external modulators, and Q-switches. Mode-locking technology requires the use of reverse-biased absorbing regions and saturated absorbing elements, which have high requirements for device design; most modulators use lithium niobate crystals, and the device cost is comparable to that of lasers; Q-switches realize optical pulses based on electro-optic effects and acousto-optic effects Regulation requires the design of a complex high-voltage drive circuit with large power consumption and size. [0003] Self-pulsing lasers do not require these measures and can directly generate short pulse trains by their own mechanism. There have been many reports...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/20H01S5/343
CPCH01S5/1014H01S5/20H01S5/343
Inventor 李俣赵英明黄卫平
Owner SHANDONG UNIV
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