Patents
Literature
58results about How to "Large process tolerance" patented technology
Efficacy Topic
Property
Owner
Technical Advancement
Application Domain
Technology Topic
Technology Field Word
Patent Country/Region
Patent Type
Patent Status
Application Year
Inventor
Focusing micro reflection element array optical anti-counterfeiting element and valuable article
ActiveCN104118236ALarge permutation periodLarge process toleranceMirrorsInformation cardsOptoelectronicsFocal length
The invention discloses a focusing micro reflection element array optical anti-counterfeiting element and a valuable article. The optical anti-counterfeiting element comprises a transparent base layer, a micropattern array composed of micropattern units and a focusing micro reflection element array composed of focusing micro reflection element units, the micropattern array at least partially covers a first surface of the transparent base layer, the focusing micro reflection element array at least partially covers a second surface of the transparent base layer, and the distance between the focal plane of the micropattern units and the focal plane of the focusing micro reflection element units are smaller than half of the focal length of the focusing micro reflection element units; the periodicity tL of the focusing micro reflection element array and the periodicity tw of the micropattern array meet a formula (please see the formula in the specification), and / or the included angle theta between the focusing micro reflection element array and the micropattern array meets the formula -5 degrees <= theta<=5 degrees, wherein n is a positive integer. Focusing micro reflection elements with the large diameter are adopted for the optical anti-counterfeiting element, the array periodicity and the technical tolerance are large, manufacturing is easy, and the yield can be increased substantially.
Owner:ZHONGCHAO SPECIAL SECURITY TECH +1
Waveguide Bragg grating based on SiO2 strip-loaded waveguide and manufacturing method thereof
ActiveCN105607186AHigh transparencyGood optical consistencyOptical waveguide light guideGratingRidge waveguides
The invention discloses a waveguide Bragg grating based on a SiO2 strip-loaded waveguide and a manufacturing method thereof. The waveguide Bragg grating comprises a substrate layer, a flat core layer, a guide core layer and an upper coating, wherein the flat core layer covers the front side of the substrate layer, the guide core layer is positioned on the front side of the flat core layer, and the upper coating covers the front side of the flat core layer and wraps the guide core layer. The waveguide Bragg grating has the advantages of simplicity in process, low cost, good consistency, large-scale production and the like; and compared with a manufacturing process of an outer ridge modulation type waveguide Bragg grating based on a ridge waveguide, the manufacturing method has the advantages that the process is simple, the cost is low, the size is small and the like.
Owner:HENAN SHIJIA PHOTONS TECH
Three-dimensional imaging optical thin film
The invention discloses a three-dimensional imaging optical thin film, which comprises a transparent spacing layer, a micro-reflective focusing unit array layer, and a micro-graphic unit array layer. The transparent spacing layer has two opposite surfaces. The micro-reflective focusing unit array layer is arranged on one surface of the transparent spacing layer and comprises a plurality of asymmetrically arranged micro-reflective focusing units. The micro-graphic unit array layer, opposite to the micro-reflective focusing unit array layer, is arranged on the other surface of the transparent spacing layer and comprises a plurality of micro-graphic units. The micro-reflective focusing unit array layer and the micro-graphic unit array layer are matched with each other, so that the three-dimensional imaging optical thin film can form one and only one suspended image suspended in the transparent spacing layer only when being viewed form the side of the micro-graphic units. The suspended image of the three-dimensional imaging optical thin film is a single-channel or multi-channel pattern. When the imaging thin film is inclined from side to side or inclined back and forth, no other amplified micro-graphic unit enters the viewing area. The thin film is unique in visual experience and can be clearly observed in the front perpendicular condition.
Owner:SHINE OPTOELECTRONICS KUNSHAN CO LTD
Methods for manufacturing superjunction structure and superjunction semiconductor device
InactiveCN102148163AImprove pressure resistanceImprove performanceSemiconductor/solid-state device manufacturingDielectricCapacitance
The invention discloses methods for manufacturing a superjunction structure and a superjunction semiconductor device. A novel semiconductor superjunction and a superjunction device are formed by the key process steps of etching a trench, performing ion implantation at a small inclination angle, filling an insulating dielectric and planarizing, forming an active layer and an electrode and the like. Compared with the prior art, the methods have the advantages that: firstly, a method of forming the superjunction by using a plurality of epitaxy processes and a plurality of implantation processes is prevented from being used; secondly, the bottom of a trench gate can be guaranteed to be flush with or slightly lower than the lower boundary of a body region, so that withstand voltage of the device is improved, and gate-source capacitance and gate-drain capacitance are reduced; thirdly, since the depth of the trench is reduced, the process difficulty of the small-angle implantation is reduced, the process tolerance is increased, and the dielectric in the extended trench is easier to fill and planarize; fourthly, a complex mask is not required, so that the influence of small-angle implantation on a trench region is avoided; and fifthly, the adverse effects of the filling and the planarizing of the extended trench and the manufacturing and the planarizing of the trench gate on the formed body region, body contact region and source region are avoided.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
Waveguide mode converter
InactiveCN104166182ASmall sizeImprove conversion efficiencyOptical waveguide light guideWaveguide mode
The invention provides a waveguide mode converter which comprises a multimode waveguide area (2) and a channel waveguide area (3) with the width changing gradually, wherein one end of the multimode waveguide area (2) is used for being connected with a slab waveguide (1), the other end of the multimode waveguide area (2) is connected with one waveguide end face of the channel waveguide area (3) with the width changing gradually, the other waveguide end face of the channel waveguide area (3) with the width changing gradually is used for being connected with a channel waveguide (4), and channels in the channel waveguide area (3) with the width changing gradually correspond to channels of the channel waveguide (4) in a one-to-one mode. The waveguide mode converter has the advantages of being small in size, high in conversion efficiency, large in work bandwidth, high in technological tolerance and easy to machine and has high application value in the integrated photoelectron field.
Owner:PEKING UNIV
Terahertz quantum cascade laser of multiple-mode interface structure and manufacturing method thereof
The invention relates to a terahertz quantum cascade laser of a multiple-mode interface structure. The terahertz quantum cascade laser comprises a multiple-mode interference wave guiding structure. The multiple-mode interference wave guiding structure comprises a semi-insulating substrate, a buffer layer, a lower contact layer, an active region, an upper contact layer and an upper metal layer in the perpendicular direction from bottom to top in sequence, wherein the active region, the upper contact layer and the upper metal layer form a ridge type structure on the lower contact layer; lower metal layers are arranged on the two sides of the ridge type structure; the upper metal layer forms a multiple-mode wave guide and output wave guides through the wet etching method; the output wave guides are single-mode wave guides and located at the centers of the two ends of the multiple-mode wave guide, and the width of each output wave guide is smaller than that of the multiple-mode wave guide. The invention further relates to a manufacturing method of the THz QCL. By the adoption of the THz QCL of the multiple-mode interface structure and the manufacturing method of the THz QCL, the light-emitting power of the THz QCL can be increased, the quality of an emitted light beam is not reduced, collection efficiency is not reduced, the device is kept small, and cost is reduced.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Optical film
ActiveUS20180196166A1Easy to adaptGood weather resistanceLensInformation cardsEngineeringThermal printing
This application discloses an optical film, comprising: a polymer having a first surface and a second surface, the first surface and the second surface opposing to each other; a microlens structure being formed on the first surface, an accommodation structure being formed on the second surface, the accommodation structure accommodating a number of pattern structures imaging through the microlens structure; the microlens structure and the accommodation structure being integral; and the micro-focusing units and the pattern structures being adapted to each other, so that the optical film forms at least one image floating in the optical film when the optical film is viewed from a side of the pattern structures or a side of the micro-focusing units. A substrate layer is omitted from the optical film, hence, the optical film is reduced in thickness, and mechanical performance is not good, which makes the optical film easy to be cut in thermoprinting.
Owner:SHINE OPTOELECTRONICS KUNSHAN CO LTD
Photoetching rework photoresist removing technology
ActiveCN103257534AWon't hurtWill not be modifiedSemiconductor/solid-state device manufacturingPhotosensitive material processingFault toleranceMaterial consumption
The invention discloses a photoetching rework photoresist removing technology which comprises the steps of: providing a wafer to be treated by photoetching rework; photoetching the surface of the wafer for a first time to produce residual photoresist; using a photoetching machine which can generate a light beam capable of enabling the photoresist to be in complete photochemical reaction to expose the surface of the whole wafer; and developing the surface of the exposed wafer, and removing the photoresist. According to the technology, plasma dry ashing does not need to be utilized, high-temperature manufacture procedure does not exist, and chemical liquid with strong oxidizing property or acidity is not needed, so that a film on the surface of the wafer is not damaged or modified. The technology is simple and less in material consumption, improves the stability and the manufacturing performance of the whole manufacturing process flow, and adds the limitation for the maximum photoetching rework times, thus providing high technical fault tolerance for research, development and mass production.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Integrated optical chip based on glass-based ion exchange buried optical waveguide and manufacturing method
The invention relates to an integrated optical chip based on a glass-based ion exchange buried optical waveguide and a manufacturing method. The integrated optical chip mainly comprises a glass substrate and an ion exchange buried optical waveguide; and the ion exchange buried optical waveguide is positioned in the glass substrate, and the distance between the ion exchange buried optical waveguide and the upper surface of the glass substrate is 0 to 7,500 microns. The manufacturing method comprises the following steps of: coating, photoetching, corrosion, glue removal, primary exchange, secondary exchange, scribing, grinding and polishing. Compared with the prior art, the invention has the advantages that polarization dependency of the chip can be reduced, the internal stress of the chip can be eliminated, and the chip has long service life, stability, reliability and the like.
Owner:上海光芯集成光学股份有限公司
Silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method
InactiveCN104111494AIncrease the number of channelsSimple structureOptical light guidesWave vectorSilicon nitride
The invention provides a silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method. The method comprises steps: step 1, a lower-limit silicon dioxide layer and a silicon nitride material mode-wavelength multiplexing integrated device layer are sequentially grown on a substrate; step 2, an etching method is adopted to etch the silicon nitride material mode-wavelength multiplexing integrated device layer into a plurality of strip-shaped waveguide structures and a plurality of microannulus resonant cavity structures, and the etching depth reach the surface of the lower-limit silicon dioxide layer; step 3, an upper-limit silicon dioxide layer and a metal heating adjusting layer are sequentially grown on the lower-limit silicon dioxide layer with the plurality of strip-shaped waveguide structures and the plurality of microannulus resonant cavity structures formed in an etching mode; and step 4, an etching method is adopted to etch the metal heating adjusting layer to a plurality of microannulus structures, and manufacturing is completed. According to the method of the invention, coupling is selected through a mode under the wave vector matching condition and characteristics are selected through wavelength of the microannulus, and the on-chip mode-wavelength multiplexing demultiplexing function is realized.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Depletion channel super-barrier rectifier and manufacturing method thereof
ActiveCN104518006AImprove controllabilityImprove high temperature stabilitySemiconductor/solid-state device manufacturingDiodeOhmic contactMedia layer
The invention aims to provide a depletion channel super-barrier rectifier and a manufacturing method thereof. The super-barrier rectifier adopts depletion channels to form a super-barrier region, and anode ohmic contact is automatically formed by anode metal and the strong inversion super-barrier region in positive connection. The depletion channel super-barrier rectifier comprises a substrate in a first conducting type, a light-doped drift region in the first conducting type, a body region in a second conducting type, a field dielectric layer, a gate medium layer, a polycrystalline silicon layer, a metal layer, a compound metal layer, a lower electrode metal layer and an upper electrode metal layer.
Owner:CHONGQING ZHONGKE YUXIN ELECTRONICS
Optical beam splitter performing separation based on coupled mode
InactiveCN102944913ALow insertion lossWide wavelength rangeOptical light guidesBeam splittingWavelength
The invention discloses an optical beam splitter performing separation based on a coupled mode. The optical beam splitter comprises a first waveguide (1) and a second waveguide (2) which are adjacent and can achieve optical beam splitting in a 2*2 mode. A distance between the two waveguides is first decreased gradually to form a coupled-mode excitation region under the condition that the size of the waveguides does not change, and then the distance between the two waveguides is increased gradually to form a coupled-mode separation region under the condition that the size of the waveguides changes towards the reverse direction. By adjusting structures of the two waveguides in the coupled-mode excitation region, the optical beam splitter can achieve various beam splitting ratios. Due to the fact that the separation in the coupled mode is achieved based on changes of a heat-insulating mode, the optical beam splitter has the advantages of being low in insertion loss, wide in wavelength range, large in process tolerance and the like.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Suspended edge coupler applied to intermediate infrared band
ActiveCN111679364AReduce transmission lossTransmission Loss EffectOptical light guidesCoupling lossMiddle infrared
The invention relates to a suspended edge coupler applied to an intermediate infrared band. The suspended edge coupler comprises a three-port inverted-cone-shaped coupler (1), a suspended ridge waveguide (2) and a cantilever supporting structure (3). Through the unique structural design, the coupling efficiency is improved, meanwhile, the process tolerance is increased, great convenience is brought to test, the problem that the waveguide-optical fiber coupling loss of the intermediate infrared band is large is solved, and good application prospects are achieved.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Monolithic silicon-based transmitter
ActiveCN108183390ARealize coupling integrationAvoid craftLaser detailsSemiconductor lasersBeam splitterPhotonics
The present invention discloses a monolithic silicon-based transmitter, and relates to the silicon photonic and photoelectron integration field. The emitter comprises a laser integrated to a silicon-based platform; a tip mode spot matcher formed on the end face of a silicon waveguide; a silicon waveguide biconical beam splitter used as the input end of an MZI modulator and connected with the tip mode spot matcher; two thermodes respectively formed on the two arms of the MZI modulator and / or two high-frequency electrodes respectively formed on the two arms of the MZI modulator; an MMI beam splitter formed behind the output end of the MZI modulator, wherein two output ports are split by the MMI beam splitter; and a backlight detector formed on the silicon-based platform and connected with one output port of the MMI beam splitter. The monolithic silicon-based transmitter not only realizes the monolithic integration of the laser and the modulator on the silicon-based platform, is low in manufacturing cost, simple in technology and high in integration degree, and facilitates the large-scale production.
Owner:WUHAN POST & TELECOMM RES INST CO LTD
Method for manufacturing longitudinal power semiconductor device
ActiveCN102945799ALower on-resistanceIncrease the switching frequencySemiconductor/solid-state device manufacturingSemiconductor devicesDielectricPower semiconductor device
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Preparation method of lithium niobate film waveguide frequency doubling device based on ferroelectric domain regulation and control
ActiveCN119126453AEliminate the effects ofImprove nonlinear conversion efficiencyVacuum evaporation coatingPhotomechanical apparatusFrequency multiplierLithium niobate
The invention discloses a preparation method of a lithium niobate film waveguide frequency doubling device based on ferroelectric domain regulation and control. The method comprises the following steps of: spin-coating photoresist on the surface of a lithium niobate film, transferring a pattern by utilizing a photoetching technology, coating a film, stripping to form an electrode, applying high-voltage electric pulse to the electrode, and controlling the size of an electric field in the lithium niobate film and a reversal domain growth process through the material and the thickness of an insulating layer in the electrode, thereby controlling the reversal depth of a ferroelectric domain. And finally, spin-coating the photoresist again, transferring the pattern by photoetching, and performing dry etching to obtain the frequency doubling waveguide device. The frequency multiplication waveguide device preparation method provided by the invention has the characteristics of simple processing method, high device preparation efficiency and low loss, and meets the actual requirements in the fields of nonlinear optics, integrated optics and the like.
Owner:ZHEJIANG UNIV
Spot size converter based on long-period grating
ActiveCN113376743AImprove optical coupling efficiencyImprove robustnessOptical waveguide light guideLight waveEngineering
The invention discloses a spot size converter based on a long-period grating. The spot size converter is applied to the field of optical communication and optical waveguide devices, realizes the conversion of the spot size of an optical wave mode, and comprises a substrate, a buffer layer, a high-refractive-index waveguide core, the long-period grating and a low-refractive-index upper cladding strip waveguide, wherein one surface of the buffer layer is fixedly connected with the substrate, and the other opposite surface of the buffer layer is fixedly connected with one surface of the high-refractive-index waveguide core; the other opposite surface of the high-refractive-index waveguide core is used for etching to obtain the long-period grating; and the other opposite surface of the high-refractive-index waveguide core and the long-period grating are fixedly connected with the low-refractive-index upper cladding strip waveguide. According to the invention, the problems of complex structure, high manufacturing difficulty, high technical cost and poor long-term stability of a traditional nanometer photonic waveguide end face coupling spot size converter are solved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Optical film
ActiveUS11143794B2Large apertureReduce film thicknessInformation cardsLensOptical thin filmMaterials science
This application discloses an optical film, comprising: a polymer having a first surface and a second surface, the first surface and the second surface opposing to each other; a microlens structure being formed on the first surface, an accommodation structure being formed on the second surface, the accommodation structure accommodating a number of pattern structures imaging through the microlens structure; the microlens structure and the accommodation structure being integral; and the micro-focusing units and the pattern structures being adapted to each other, so that the optical film forms at least one image floating in the optical film when the optical film is viewed from a side of the pattern structures or a side of the micro-focusing units. A substrate layer is omitted from the optical film, hence, the optical film is reduced in thickness, and mechanical performance is not good, which makes the optical film easy to be cut in thermoprinting.
Owner:SHINE OPTOELECTRONICS KUNSHAN CO LTD
Multichannel optical power divider based on MMI structure and preparation method thereof
ActiveCN119596456ALarge process tolerancesmall sizeCoupling light guidesOptical waveguide light guidePolymer optical waveguideOptical power
The invention discloses a multi-channel optical power divider based on an MMI structure and a preparation method thereof, and belongs to the technical field of planar optical waveguide devices and preparation thereof. The polymer optical waveguide is composed of a silicon wafer substrate, a polymer lower cladding, a polymer optical waveguide core layer of a strip-shaped structure and a polymer upper cladding in sequence from bottom to top, and the polymer optical waveguide core layer of the strip-shaped structure is based on an MMI structure and is wrapped in the polymer upper cladding. According to the waveguide type power divider, the characteristics of large process tolerance and small size of an MMI optical waveguide structure are combined, and the advantage of various types of organic polymer materials is also utilized, so that the purpose of performing same power distribution on input of a plurality of different ports is realized; besides, the process for preparing the device by adopting the polymer material is relatively simple, only conventional processes such as spin coating and photoetching are needed, the process with relatively high difficulty is not needed, the production cost is low, the efficiency is high, large-scale batch production can be realized, and the power divider can be applied to practice.
Owner:JILIN UNIVERSITY
Self-pulse and continuous output type silicon-based integrated semiconductor laser based on Fano resonance and preparation method of self-pulse and continuous output type silicon-based integrated semiconductor laser
ActiveCN113193477AGood single modelHigh pulse repetition rateOptical wave guidanceLaser detailsOptical communicationWaveguide
The invention relates to a self-pulse and continuous output type silicon-based integrated semiconductor laser based on Fano resonance and a preparation method of the self-pulse and continuous output type silicon-based integrated semiconductor laser. The laser comprises a substrate, and a Bragg reflector, a first tapered waveguide, III-V group multi-quantum well active regions, a second tapered waveguide and a Fano reflector which are sequentially arranged on the substrate from left to right. The Fano reflector comprises a straight waveguide and a micro-ring waveguide; the micro-ring waveguide is covered with graphene to form saturated absorption; a partial transmission unit is designed in a coupling area of a micro-ring waveguide and a straight waveguide, Fano resonance is generated, two working modes of self-pulse and continuity in a 1550nm optical communication C wave band are realized, and the laser can be suitable for multiple application scenes. Under continuous output, the central wavelength is 1550nm, and the single-mode characteristic is good; in the self-pulse mode, as the current increases, the pulse repetition rate reaches GHz, and the high pulse repetition rate is achieved. The preparation method is compatible with a conventional process and is suitable for low-cost efficient preparation.
Owner:SHANDONG UNIV +1
Optical splitter
Disclosed in the invention is an optical splitter, which comprises a branch structure (2) having a plurality of branches and a rowland circle structure having a free transmission zone (3). The branch structure includes an expansion zone (9), wherein the refractive index distribution is in a gradual changing mode so as to meet a sinusoidal function distribution requirement at an orthogonal direction of optical transmission. More specifically, the rowland circle structure comprises: an input end (2) and an output end (7); the input end (2) is connected with a first side (6) of the free transmission zone (3) containing the rowland circle structure, wherein the first side (6) has a small circular arc; and the output end is connected with an inputted waveguide (1); and a second side (8) of the free transmission zone (3) is connected with an outputted waveguide array (4), wherein the second side (8) has a larger circular arc. In addition, the invention also discloses a method for manufacturing the optical splitter. The provided optical splitter has advantages of compact structure, simple process and good extendibility.
Owner:上海光芯集成光学股份有限公司
Total internal reflection light switch based on phase change material and use method thereof
ActiveCN119493313Areduce lossreduce crosstalkNon-linear opticsTotal internal reflectionRefractive index
The invention belongs to the technical field of integrated photonic devices, and discloses a total internal reflection light switch based on a phase change material and a use method thereof.The phase change material area is subjected to first pretreatment, the phase change material in the phase change material area is completely converted into an amorphous state from a crystalline state, and the phase change material in the phase change material area is subjected to second pretreatment; the difference value between the refractive index of the phase change material and the refractive index of the waveguide is greater than 0.6, and at the moment, the total internal reflection light switch is in a cross state; second pretreatment is carried out on the phase-change material area, the phase-change material in the phase-change material area is completely converted into a crystalline state from an amorphous state, the difference value between the refractive index of the phase-change material and the refractive index of the waveguide is 0-0.2, at the moment, the straight-through function of the total internal reflection optical switch is achieved, the power consumption of the optical switch is remarkably reduced, and the optical switch has a wide application prospect. Performance indexes of the optical switch are optimized, multi-mode optical signal transmission is achieved, and application of the optical switch in the fields of high-speed optical communication, optical interconnection and optical calculation is promoted.
Owner:HUAZHONG UNIV OF SCI & TECH
Reconfigurable LP11a-LP11b mode rotator and application thereof
ActiveCN113376741ASimple structureImprove conversion efficiencyOptical mode multiplex systemsOptical waveguide light guideEngineeringOptical communication
The invention discloses a reconfigurable LP11a-LP11b mode rotator and application thereof, and is applied to the field of optical communication. Aiming to solve the problem that only fixed mode rotation or mode conversion can be realized in the prior art, the invention realizes reconfigurable conversion between an LP11a mode and an LP11b mode by utilizing waveguide asymmetry caused by a thermo-optic effect. The rotator comprises a dual-mode waveguide and an electrode heater located above the dual-mode waveguide; and the electrode heater applies current, all isotherms distributed in a generated temperature field cut a waveguide core at the same horizontal distance and vertical distance, and mode conversion of the LP11a mode and the LP11b mode is achieved.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
A multi-mode interference structure terahertz quantum cascade laser and its manufacturing method
ActiveCN103915758BLarge gain areaQuality improvementOptical wave guidanceEtchingMultimode interference
The invention relates to a terahertz quantum cascade laser of a multiple-mode interface structure. The terahertz quantum cascade laser comprises a multiple-mode interference wave guiding structure. The multiple-mode interference wave guiding structure comprises a semi-insulating substrate, a buffer layer, a lower contact layer, an active region, an upper contact layer and an upper metal layer in the perpendicular direction from bottom to top in sequence, wherein the active region, the upper contact layer and the upper metal layer form a ridge type structure on the lower contact layer; lower metal layers are arranged on the two sides of the ridge type structure; the upper metal layer forms a multiple-mode wave guide and output wave guides through the wet etching method; the output wave guides are single-mode wave guides and located at the centers of the two ends of the multiple-mode wave guide, and the width of each output wave guide is smaller than that of the multiple-mode wave guide. The invention further relates to a manufacturing method of the THz QCL. By the adoption of the THz QCL of the multiple-mode interface structure and the manufacturing method of the THz QCL, the light-emitting power of the THz QCL can be increased, the quality of an emitted light beam is not reduced, collection efficiency is not reduced, the device is kept small, and cost is reduced.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Novel heterogeneous integrated light source heat insulation coupling structure
PendingCN119511446Alow loss transmissionReduce coupling lossCoupling light guidesOptical waveguide light guideCoupling lossLight signal
The invention discloses a novel heterogeneous integrated light source adiabatic coupling structure, which comprises an active waveguide structure and a passive waveguide structure, and is characterized in that the passive waveguide structure comprises a flat silicon core and a ridge silicon core 003, one end of the ridge silicon core 003 is provided with a passive coupling section 011 of which the width is gradually reduced, and an active waveguide structure 002 is superposed above the passive coupling section 011; and an active coupling section 012 of the active waveguide structure 002 is wedge-shaped. Light is input into the passive coupling section 011 from the passive waveguide, the width of the ridge silicon core 003 of the passive coupling section 011 is gradually reduced, the width of the active coupling section 012 is gradually increased, in the process, the effective refractive index of the silicon waveguide is matched with that of the active waveguide, and part of optical signals enter the active coupling section 012 from the passive coupling section 011 in an adiabatic coupling mode. Through the conical coupling structure provided by the invention, extremely low loss transmission of light between the passive silicon waveguide and the heterogeneous integrated light source active waveguide can be realized, and the coupling loss between the passive silicon waveguide and the heterogeneous integrated light source active waveguide is effectively reduced.
Owner:SHANGHAI UNIV
Coupling method of PLC optical branching device
ActiveCN112462472AEasy to operateImprove consistencyCoupling light guidesMechanical engineeringPhysics
The invention relates to a coupling method of a PLC optical branching device, and belongs to the technical field of integrated optics. According to the method, an optical divider chip containing 1*M and FA of an M channel are coupled and bonded to form a 1*M input assembly, then an optical divider chip containing 1*N and FA of an N channel are coupled and bonded to form a 1*N output assembly, andthen the 1*M input assembly and the 1*N output assembly are mutually collimated, coupled and bonded to form the M*N optical divider. The coupling method of the PLC optical branching device is quick tooperate and good in consistency; in the coupling process, the positions of coupling points of the input end assembly and the output end assembly can be finely adjusted, so that the process toleranceis increased, the yield and the optical performance of the device are effectively improved, and the cost is reduced; the device types can be switched by combining the types of the input end assembly and the output end assembly, the customization degree is high, the research and development time is short, and the application prospect is wide.
Owner:常州光芯集成光学有限公司
A monolithic silicon-based emitter
ActiveCN108183390BRealize coupling integrationAvoid craftLaser detailsSemiconductor lasersBeam splitterPhotonics
Owner:WUHAN POST & TELECOMM RES INST CO LTD
Perpendicular stacking type full-color Micro-LED display device based on photonic crystal structure
PendingCN119317282AReduce absorption lossImprove extraction efficiencyLED displayPhotonic crystal structure
The invention discloses a vertically stacked full-color Micro-LED display device based on a photonic crystal structure, the vertically stacked full-color Micro-LED display device comprises a substrate layer, a red light Micro-LED layer, a two-dimensional photonic crystal connecting layer, a green light Micro-LED, a two-dimensional photonic crystal connecting layer, a blue light Micro-LED, a GaP connecting layer and an ITO / air interface layer from bottom to top in sequence, the two-dimensional photonic crystal is composed of indium bumps and air holes, the period of the two-dimensional photonic crystal is 100nm-2000nm, and the interval of the indium bumps and the air holes is 100nm-2000nm. The duty ratio is 20%-80%, and the height is 20 nm-500 nm. A two-dimensional photonic crystal structure is used and optimized, and red light and green light are reflected by adjusting the forbidden bandwidth of the photonic crystal, so that the light extraction efficiency of the bottom red light-emitting unit and the middle green light-emitting unit is improved, and the absorption loss of the red light and the green light is reduced; the problems that due to the fact that different-color connecting layers of an existing vertical stacking type Micro-LED display device absorb light seriously, the overall light emitting efficiency of the device is low, the chromaticity is not good, and use is affected are solved.
Owner:HENAN COSTAR GRP CO LTD
Electro-optic intensity modulator with improved switch extinction ratio and its application
ActiveCN111458948BHigh extinction ratioIncrease modulation bandwidthNon-linear opticsMultimode interferenceOptical power
An electro-optical intensity modulator and its application to realize the improvement of the switch extinction ratio, the electro-optic intensity modulator includes an input optical waveguide; a first coupler; a first pair of phase modulation arms, and the sides of the two arms are provided with a first pair of rows Wave electrode; multi-mode interference structure, which includes two input optical waveguides, a multi-mode interference region and two output optical waveguides, used to convert the two beams of light modulated by the first pair of phase modulation arms through the multi-mode interference region The new two beams of light that are output; the second pair of phase modulation arms, the sides of the two arms are provided with a second pair of traveling wave electrodes; the second coupler and the output optical waveguide, which are used to combine the second coupler after the light output. The structure of the present invention can compensate the decrease of the extinction ratio caused by the asymmetry caused by the process error by tuning the optical power ratio of the two branches at the input end of the modulator, significantly improve the extinction ratio, increase the process tolerance, and improve the production efficiency and good quality Rate.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Vertical Capacitively Coupled Gate Controlled Junction Field Effect Transistor
The embodiment of the present application provides a vertical capacitively coupled gate-controlled junction field effect transistor, comprising: a substrate and an epitaxial layer, the epitaxial layer is located above the substrate; two bottom gates of the second doping type are formed in the epitaxial layer and are arranged at a lateral interval; a combined top gate of the second doping type, the top gate comprises a top gate inner region and a top gate outer region, the top gate inner region is formed from top to bottom in the epitaxial layer, the top gate outer region surrounds the bottom surface and the side surface of the top gate inner region, and there is a gap between the top gate outer region and the bottom gate; wherein the doping concentration of the top gate outer region is less than the doping concentration of the top gate inner region, and the top gate is in a floating state; a dielectric layer is located above the top gate; and a coupling capacitor upper electrode is formed on the dielectric layer. The present application solves the technical problem that the process window of the traditional vertical capacitively coupled gate-controlled junction field effect transistor is extremely small.
Owner:SUZHOU LOONGSPEED SEMICON TECH CO LTD