49results about How to "Large process tolerance" patented technology

The invention discloses a waveguide Bragg grating based on a SiO2 strip-loaded waveguide and a manufacturing method thereof. The waveguide Bragg grating comprises a substrate layer, a flat core layer, a guide core layer and an upper coating, wherein the flat core layer covers the front side of the substrate layer, the guide core layer is positioned on the front side of the flat core layer, and the upper coating covers the front side of the flat core layer and wraps the guide core layer. The waveguide Bragg grating has the advantages of simplicity in process, low cost, good consistency, large-scale production and the like; and compared with a manufacturing process of an outer ridge modulation type waveguide Bragg grating based on a ridge waveguide, the manufacturing method has the advantages that the process is simple, the cost is low, the size is small and the like.

The invention discloses a three-dimensional imaging optical thin film, which comprises a transparent spacing layer, a micro-reflective focusing unit array layer, and a micro-graphic unit array layer. The transparent spacing layer has two opposite surfaces. The micro-reflective focusing unit array layer is arranged on one surface of the transparent spacing layer and comprises a plurality of asymmetrically arranged micro-reflective focusing units. The micro-graphic unit array layer, opposite to the micro-reflective focusing unit array layer, is arranged on the other surface of the transparent spacing layer and comprises a plurality of micro-graphic units. The micro-reflective focusing unit array layer and the micro-graphic unit array layer are matched with each other, so that the three-dimensional imaging optical thin film can form one and only one suspended image suspended in the transparent spacing layer only when being viewed form the side of the micro-graphic units. The suspended image of the three-dimensional imaging optical thin film is a single-channel or multi-channel pattern. When the imaging thin film is inclined from side to side or inclined back and forth, no other amplified micro-graphic unit enters the viewing area. The thin film is unique in visual experience and can be clearly observed in the front perpendicular condition.

The invention discloses methods for manufacturing a superjunction structure and a superjunction semiconductor device. A novel semiconductor superjunction and a superjunction device are formed by the key process steps of etching a trench, performing ion implantation at a small inclination angle, filling an insulating dielectric and planarizing, forming an active layer and an electrode and the like. Compared with the prior art, the methods have the advantages that: firstly, a method of forming the superjunction by using a plurality of epitaxy processes and a plurality of implantation processes is prevented from being used; secondly, the bottom of a trench gate can be guaranteed to be flush with or slightly lower than the lower boundary of a body region, so that withstand voltage of the device is improved, and gate-source capacitance and gate-drain capacitance are reduced; thirdly, since the depth of the trench is reduced, the process difficulty of the small-angle implantation is reduced, the process tolerance is increased, and the dielectric in the extended trench is easier to fill and planarize; fourthly, a complex mask is not required, so that the influence of small-angle implantation on a trench region is avoided; and fifthly, the adverse effects of the filling and the planarizing of the extended trench and the manufacturing and the planarizing of the trench gate on the formed body region, body contact region and source region are avoided.

The invention provides a waveguide mode converter which comprises a multimode waveguide area (2) and a channel waveguide area (3) with the width changing gradually, wherein one end of the multimode waveguide area (2) is used for being connected with a slab waveguide (1), the other end of the multimode waveguide area (2) is connected with one waveguide end face of the channel waveguide area (3) with the width changing gradually, the other waveguide end face of the channel waveguide area (3) with the width changing gradually is used for being connected with a channel waveguide (4), and channels in the channel waveguide area (3) with the width changing gradually correspond to channels of the channel waveguide (4) in a one-to-one mode. The waveguide mode converter has the advantages of being small in size, high in conversion efficiency, large in work bandwidth, high in technological tolerance and easy to machine and has high application value in the integrated photoelectron field.

This application discloses an optical film, comprising: a polymer having a first surface and a second surface, the first surface and the second surface opposing to each other; a microlens structure being formed on the first surface, an accommodation structure being formed on the second surface, the accommodation structure accommodating a number of pattern structures imaging through the microlens structure; the microlens structure and the accommodation structure being integral; and the micro-focusing units and the pattern structures being adapted to each other, so that the optical film forms at least one image floating in the optical film when the optical film is viewed from a side of the pattern structures or a side of the micro-focusing units. A substrate layer is omitted from the optical film, hence, the optical film is reduced in thickness, and mechanical performance is not good, which makes the optical film easy to be cut in thermoprinting.

The invention discloses a photoetching rework photoresist removing technology which comprises the steps of: providing a wafer to be treated by photoetching rework; photoetching the surface of the wafer for a first time to produce residual photoresist; using a photoetching machine which can generate a light beam capable of enabling the photoresist to be in complete photochemical reaction to expose the surface of the whole wafer; and developing the surface of the exposed wafer, and removing the photoresist. According to the technology, plasma dry ashing does not need to be utilized, high-temperature manufacture procedure does not exist, and chemical liquid with strong oxidizing property or acidity is not needed, so that a film on the surface of the wafer is not damaged or modified. The technology is simple and less in material consumption, improves the stability and the manufacturing performance of the whole manufacturing process flow, and adds the limitation for the maximum photoetching rework times, thus providing high technical fault tolerance for research, development and mass production.

The invention relates to an integrated optical chip based on a glass-based ion exchange buried optical waveguide and a manufacturing method. The integrated optical chip mainly comprises a glass substrate and an ion exchange buried optical waveguide; and the ion exchange buried optical waveguide is positioned in the glass substrate, and the distance between the ion exchange buried optical waveguide and the upper surface of the glass substrate is 0 to 7,500 microns. The manufacturing method comprises the following steps of: coating, photoetching, corrosion, glue removal, primary exchange, secondary exchange, scribing, grinding and polishing. Compared with the prior art, the invention has the advantages that polarization dependency of the chip can be reduced, the internal stress of the chip can be eliminated, and the chip has long service life, stability, reliability and the like.

The invention provides a silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method. The method comprises steps: step 1, a lower-limit silicon dioxide layer and a silicon nitride material mode-wavelength multiplexing integrated device layer are sequentially grown on a substrate; step 2, an etching method is adopted to etch the silicon nitride material mode-wavelength multiplexing integrated device layer into a plurality of strip-shaped waveguide structures and a plurality of microannulus resonant cavity structures, and the etching depth reach the surface of the lower-limit silicon dioxide layer; step 3, an upper-limit silicon dioxide layer and a metal heating adjusting layer are sequentially grown on the lower-limit silicon dioxide layer with the plurality of strip-shaped waveguide structures and the plurality of microannulus resonant cavity structures formed in an etching mode; and step 4, an etching method is adopted to etch the metal heating adjusting layer to a plurality of microannulus structures, and manufacturing is completed. According to the method of the invention, coupling is selected through a mode under the wave vector matching condition and characteristics are selected through wavelength of the microannulus, and the on-chip mode-wavelength multiplexing demultiplexing function is realized.

The invention discloses a spot size converter based on a long-period grating. The spot size converter is applied to the field of optical communication and optical waveguide devices, realizes the conversion of the spot size of an optical wave mode, and comprises a substrate, a buffer layer, a high-refractive-index waveguide core, the long-period grating and a low-refractive-index upper cladding strip waveguide, wherein one surface of the buffer layer is fixedly connected with the substrate, and the other opposite surface of the buffer layer is fixedly connected with one surface of the high-refractive-index waveguide core; the other opposite surface of the high-refractive-index waveguide core is used for etching to obtain the long-period grating; and the other opposite surface of the high-refractive-index waveguide core and the long-period grating are fixedly connected with the low-refractive-index upper cladding strip waveguide. According to the invention, the problems of complex structure, high manufacturing difficulty, high technical cost and poor long-term stability of a traditional nanometer photonic waveguide end face coupling spot size converter are solved.

The invention relates to a self-pulse and continuous output type silicon-based integrated semiconductor laser based on Fano resonance and a preparation method of the self-pulse and continuous output type silicon-based integrated semiconductor laser. The laser comprises a substrate, and a Bragg reflector, a first tapered waveguide, III-V group multi-quantum well active regions, a second tapered waveguide and a Fano reflector which are sequentially arranged on the substrate from left to right. The Fano reflector comprises a straight waveguide and a micro-ring waveguide; the micro-ring waveguide is covered with graphene to form saturated absorption; a partial transmission unit is designed in a coupling area of a micro-ring waveguide and a straight waveguide, Fano resonance is generated, two working modes of self-pulse and continuity in a 1550nm optical communication C wave band are realized, and the laser can be suitable for multiple application scenes. Under continuous output, the central wavelength is 1550nm, and the single-mode characteristic is good; in the self-pulse mode, as the current increases, the pulse repetition rate reaches GHz, and the high pulse repetition rate is achieved. The preparation method is compatible with a conventional process and is suitable for low-cost efficient preparation.

Disclosed in the invention is an optical splitter, which comprises a branch structure (2) having a plurality of branches and a rowland circle structure having a free transmission zone (3). The branch structure includes an expansion zone (9), wherein the refractive index distribution is in a gradual changing mode so as to meet a sinusoidal function distribution requirement at an orthogonal direction of optical transmission. More specifically, the rowland circle structure comprises: an input end (2) and an output end (7); the input end (2) is connected with a first side (6) of the free transmission zone (3) containing the rowland circle structure, wherein the first side (6) has a small circular arc; and the output end is connected with an inputted waveguide (1); and a second side (8) of the free transmission zone (3) is connected with an outputted waveguide array (4), wherein the second side (8) has a larger circular arc. In addition, the invention also discloses a method for manufacturing the optical splitter. The provided optical splitter has advantages of compact structure, simple process and good extendibility.

The invention discloses a reconfigurable LP11a-LP11b mode rotator and application thereof, and is applied to the field of optical communication. Aiming to solve the problem that only fixed mode rotation or mode conversion can be realized in the prior art, the invention realizes reconfigurable conversion between an LP11a mode and an LP11b mode by utilizing waveguide asymmetry caused by a thermo-optic effect. The rotator comprises a dual-mode waveguide and an electrode heater located above the dual-mode waveguide; and the electrode heater applies current, all isotherms distributed in a generated temperature field cut a waveguide core at the same horizontal distance and vertical distance, and mode conversion of the LP11a mode and the LP11b mode is achieved.