Depletion channel super-barrier rectifier and manufacturing method thereof

A super-barrier rectifier, depletion-type technology, applied in the manufacture of depletion-type channel super-barrier rectifiers, depletion-type channel super-barrier power rectifier field, can solve the problem of affecting forward conduction voltage drop, high turn-on Voltage, rectifier temperature rise and other issues, to achieve the effect of enhancing controllability, good high temperature stability, and reducing production costs

Active Publication Date: 2015-04-15
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Schottky barrier rectifier is a majority carrier working device that uses the contact barrier between the metal and the semiconductor. The contact barrier between the metal and the semiconductor directly affects the forward voltage of the Schottky barrier rectifier. drop, and the reverse leakage current of the Schottky barrier rectifier usually increases rapidly with the increase of temperature, and the increase of the leakage current will increase the temperature of the rectifier; therefore, reducing the Schottky barrier rectifier in the application Stability and Reliability
[0004] Although the performance of the PIN diode is stable at high temperature, it requires a higher turn-on voltage in order to overcome the built-in potential of the PN junction when conducting forward conduction, which significantly affects the forward conduction voltage drop, and the minority carrier injection during forward conduction effect significantly affects the reverse turn-off time

Method used

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  • Depletion channel super-barrier rectifier and manufacturing method thereof
  • Depletion channel super-barrier rectifier and manufacturing method thereof
  • Depletion channel super-barrier rectifier and manufacturing method thereof

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Embodiment 1

[0039] Such as figure 2 As shown, a depletion-type channel super-barrier rectifier includes a heavily doped first conductivity type substrate 10, a lightly doped first conductivity type drift region 20, a second conductivity type body region 22, and a field dielectric layer 30 , gate dielectric layer 31 , polysilicon layer 32 , compound metal layer 33 and metal layer 34 . Typical parameters are selected as follows: the heavily doped first conductivity type substrate 10 is N-type doped with a concentration greater than the 19th power, the lightly doped first conductivity type drift region 20 is N-type doped with a medium doping concentration, The second conductivity type body region 22 is P-type doped with medium doping concentration, the field dielectric layer 30 is silicon dioxide with a thickness of 5000A to 10000A, and the gate dielectric layer 31 is thermally grown silicon dioxide with a thickness of 50A to 100A. The compound metal layer comes from the silicide formed af...

Embodiment 2

[0049] This embodiment discloses a method for manufacturing a depletion-type trench super-barrier rectifier, including the following steps:

[0050] 1) as image 3 As shown, a lightly doped first conductive type drift region 20 is covered on a heavily doped first conductive type substrate 10, and a field dielectric layer 30 is formed on the lightly doped first conductive type drift region 20, thereby as the basis for the device.

[0051] 2) such as Figure 4 As shown, a mask layer 35 is covered on the field dielectric layer 30 . The mask layer 35 has an annular through groove. The field dielectric layer 30 below the annular through groove of the mask layer 35 is etched so that the annular through groove is formed on the field dielectric layer 30 , and the mask layer 35 is removed. The bottom of the annular channel on the field dielectric layer 30 is the lightly doped drift region 20 of the first conductivity type.

[0052] 3) as Figure 5 As shown, the lightly doped drif...

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Abstract

The invention aims to provide a depletion channel super-barrier rectifier and a manufacturing method thereof. The super-barrier rectifier adopts depletion channels to form a super-barrier region, and anode ohmic contact is automatically formed by anode metal and the strong inversion super-barrier region in positive connection. The depletion channel super-barrier rectifier comprises a substrate in a first conducting type, a light-doped drift region in the first conducting type, a body region in a second conducting type, a field dielectric layer, a gate medium layer, a polycrystalline silicon layer, a metal layer, a compound metal layer, a lower electrode metal layer and an upper electrode metal layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and mainly relates to a semiconductor power rectifier, in particular to a depletion-type trench super-barrier power rectifier; the invention also relates to a manufacturing method of the depletion-type trench super-barrier rectifier. Background technique [0002] Power semiconductor rectifiers are widely used in power converters and power supplies. Common rectifiers include Schottky barrier rectifiers, PIN power rectifiers and super barrier rectifiers (SBR, Super Barrier Rectifier). [0003] The Schottky barrier rectifier is a majority carrier working device that uses the contact barrier between the metal and the semiconductor. The contact barrier between the metal and the semiconductor directly affects the forward voltage of the Schottky barrier rectifier. drop, and the reverse leakage current of the Schottky barrier rectifier usually increases rapidly with the increase of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/78H01L21/28H01L21/336
CPCH01L29/42312H01L29/47H01L29/66356H01L29/7391
Inventor 陈文锁肖添钟怡胡镜影张培健刘嵘侃
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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