Silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method

Abstract

The invention provides a silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method. The method comprises steps: step 1, a lower-limit silicon dioxide layer and a silicon nitride material mode-wavelength multiplexing integrated device layer are sequentially grown on a substrate; step 2, an etching method is adopted to etch the silicon nitride material mode-wavelength multiplexing integrated device layer into a plurality of strip-shaped waveguide structures and a plurality of microannulus resonant cavity structures, and the etching depth reach the surface of the lower-limit silicon dioxide layer; step 3, an upper-limit silicon dioxide layer and a metal heating adjusting layer are sequentially grown on the lower-limit silicon dioxide layer with the plurality of strip-shaped waveguide structures and the plurality of microannulus resonant cavity structures formed in an etching mode; and step 4, an etching method is adopted to etch the metal heating adjusting layer to a plurality of microannulus structures, and manufacturing is completed. According to the method of the invention, coupling is selected through a mode under the wave vector matching condition and characteristics are selected through wavelength of the microannulus, and the on-chip mode-wavelength multiplexing demultiplexing function is realized.

Description

technical field [0001] The patent of the invention relates to the fields of optical interconnection, silicon-based photonics and semiconductor photonics integration, and in particular to a method for preparing a mode-wavelength multiplexing device based on silicon nitride waveguides and microrings. More specifically, the invention utilizes silicon nitride The high-efficiency optical coupling conversion of the waveguide direct coupler and the wavelength selection function of the microring resonator realize the on-chip multiplexing, demultiplexing and filtering functions. Background technique [0002] With the increasing integration of modern microelectronic devices, the challenge of chip performance has shifted from computing functions to data transmission. By 2022, the data transmission rate of interconnection on each chip of the next-generation system architecture is expected to reach 780Tb / s, while the electrical interconnection on a conventional single chip can provide a ...

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Problems solved by technology

[0003] In order to meet the Peta level (10 15 ) data transmission capacity, it is necessary to accommodate tens of thousands of o

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