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Preparation method of acid-sensitive monomer in ArF photoresist

A photoresist and acid-sensitive technology, which is applied in the field of preparation of acid-sensitive monomers, to achieve the effects of increased yield, easy operation, and less pollution

Inactive Publication Date: 2021-08-06
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present invention provides a method for preparing an acid-sensitive monomer in an ArF photoresist. The acid-sensitive monomer described in the present invention is specifically 5,5-dimethyl-4,8-dioxatricyclo[ 4.2.1.03,7] Nonyl-2-methacrylate, aiming to solve the shortcomings of existing preparation methods

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  • Preparation method of acid-sensitive monomer in ArF photoresist
  • Preparation method of acid-sensitive monomer in ArF photoresist

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0024] The present invention adopts 5,5-dimethyl-4,8-dioxatricyclo[4.2.1.03,7]nonyl-2-alcohol, methacrylic reactant and basic catalyst to carry out the reaction (specific reaction formula As shown below), the productive rate of the reaction of the present application is greatly improved, and the productive rate can be as high as more than 90%. At the same time, the application uses precipitation and recrystallization to post-treat the reaction solution. The post-processing method is simple, quick, easy to operate, and has less pollution. The purity of the obtained product is high, and the purity ca...

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Abstract

The invention is suitable for the technical field of photoresist material preparation, and provides a preparation method of an acid-sensitive monomer in an ArF photoresist, wherein the acid-sensitive monomer is specifically 5,5-dimethyl-4,8-dioxatricyclo[4.2.1.03,7]nonyl-2-methacrylate. According to the method, the 5,5-dimethyl-4,8-dioxatricyclo[4.2.1.03,7]nonyl-2-ol, methallyl reactants and a basic catalyst are adopted for reaction, so that the yield of the reaction is greatly improved, and the yield can reach 90% or above. Meanwhile, the reaction liquid is subjected to post-treatment through precipitation and recrystallization, the post-treatment method is simple, rapid, easy to operate and small in pollution, and the purity of the obtained product is high and can reach 99.99%.

Description

technical field [0001] The invention belongs to the technical field of preparation of photoresist materials, and in particular relates to a method for preparing an acid-sensitive monomer in ArF photoresist. The acid-sensitive monomer described in the invention is specifically 5,5-dimethyl-4, 8-Dioxatricyclo[4.2.1.03,7]nonyl-2-methacrylate. Background technique [0002] As the size of integrated circuits continues to decrease, the resolution requirements for photoresists in the photolithography process are also increasing. This has prompted people to continue to conduct in-depth research on photoresist materials based on short-wavelength light sources such as KrF, ArF or F2 excimer lasers, and continue to develop photoresists with smaller line widths, higher resolutions, and smaller line roughness. glue material. 5-Dimethyl-4,8-dioxatricyclo[4.2.1.03,7]nonyl-2-methacrylate is an important acid-sensitive monomer in ArF photoresist, widely used in photoresist use. Contents...

Claims

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Application Information

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IPC IPC(8): C07D493/18
CPCC07D493/18
Inventor 周浩杰马潇夏正建陈情丽毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD