Vapor phase growth apparatus
A vapor phase growth, gas chamber technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of size deviation, unable to obtain film reproducibility, unable to obtain buffer chamber pressure distribution reproducibility, etc., to improve the reproducibility sexual effect
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no. 1 approach
[0026] The vapor phase growth apparatus of the first embodiment includes: a reaction chamber; a first gas chamber provided above the reaction chamber and into which a first process gas is introduced; a plurality of first gas conduits for supplying the first gas from the first gas chamber to the reaction chamber. The process gas has a prescribed length; and a first adjustment conduit is inserted into the upper side of at least one first gas conduit among the plurality of first gas conduits, and the first adjustment conduit has a ring-shaped protrusion provided on the outer periphery of the upper end. part, detachable from the first gas conduit.
[0027] figure 1 It is a schematic cross-sectional view of the vapor phase growth apparatus of the first embodiment. The vapor phase growth apparatus 100 of the first embodiment is, for example, a monolithic epitaxial growth apparatus for epitaxially growing a single-crystal SiC film on a single-crystal SiC substrate.
[0028] The vap...
no. 2 approach
[0106] The vapor phase growth apparatus of the second embodiment differs from the vapor phase growth apparatus of the first embodiment in that the shapes of the gas conduits and the adjustment conduits are different. Hereinafter, some descriptions of the contents overlapping with those of the first embodiment are omitted.
[0107] Figure 5 It is a schematic cross-sectional view of the first gas conduit and the first adjustment conduit of the second embodiment.
[0108] The flange 51 b of the first gas conduit 51 is provided on the outer periphery of the end portion of the first gas conduit 51 on the first buffer chamber 11 side. The flange 51b is an annular convex portion protruding outward from the cylindrical portion 51a.
[0109] At least a part of the inner peripheral surface of the first gas conduit 51 is tapered. The inner peripheral surface of the flange 51b is tapered. The inner peripheral surface of the flange 51b is inclined with respect to the first direction a...
no. 3 approach
[0116] The vapor phase growth apparatus of the third embodiment differs from the vapor phase growth apparatus of the first embodiment in that there is one gas chamber. Hereinafter, some descriptions of the contents overlapping with those of the first embodiment are omitted.
[0117] Figure 6 is a schematic cross-sectional view of a vapor phase growth apparatus according to a third embodiment. The vapor phase growth apparatus 300 of the third embodiment is, for example, a monolithic epitaxial growth apparatus for epitaxially growing a single-crystal SiC film on a single-crystal SiC substrate.
[0118] The vapor phase growth apparatus 300 of the third embodiment includes a reaction chamber 10 and a buffer chamber 13 (gas chamber). The reaction chamber 10 includes a base 14 (holder), a rotating body 16 , a rotating shaft 18 , a rotating drive mechanism 20 , a first heater 22 , a reflector 28 , a support column 30 , a fixed table 32 , a fixed shaft 34 , and a shield 40 , the s...
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Abstract
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