Preparation method of semiconductor substrate and semiconductor structure

Abstract

The invention relates to a preparation method of a semiconductor substrate and a semiconductor structure. The preparation method of the semiconductor structure comprises the following steps: epitaxially growing a germanium buffer layer on a silicon substrate, and growing a first insulating layer on the surface of the germanium buffer layer; performing graphical etching on the first insulating layer to form a plurality of grooves; epitaxially growing a germanium tin layer; providing a supporting substrate, and growing a second insulating layer on the supporting substrate; bonding the supporting substrate with the semiconductor substrate, wherein the second insulating layer is adjacent to the germanium tin layer; and removing the silicon substrate, the germanium buffer layer and the first insulating layer. According to the invention, the germanium tin layer with high quality and high component strain release can be grown.

Description

technical field [0001] The invention relates to the field of semiconductor production technology, in particular to a method for preparing a semiconductor substrate and a semiconductor structure. Background technique [0002] Since the solid solubility of Sn materials in Ge is only 1%, the growth of high-quality and high-composition GeSn materials has been a problem that has plagued the industry for many years. [0003] GeSn will convert from an indirect bandgap material to a direct bandgap material when the Sn composition is about 6%. It is a very promising optoelectronic material among IV compound materials. At the same time, GeSn material has superior carrier mobility than Ge It is an ideal channel material for microelectronic devices. The advantages of the above-mentioned GeSn materials make it the most promising material for Si optoelectronic integration. However, GeSn usually needs to be grown on the Ge buffer layer, and its huge lattice difference causes GeSn As the c...

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Problems solved by technology

[0003] GeSn will convert from an indirect bandgap material to a direct bandgap material when the Sn composition is about 6%. It is a very promising optoelectronic material among IV compound materials. At the same time, GeSn material has superior carrier mobility than Ge It is an ideal channel material for microelectronic devices. The advantages of the above-mentioned GeSn materials make it the most promising material for Si optoelectronic integration. However, GeSn usually needs to be grown on the Ge buffer layer, and its huge lattice difference causes GeSn As the composition increases, a very large compressive strain will be introduced. This compressive strain requires a higher Sn composition for the transformation of the GeSn material to a direct band gap. However, it is difficult to prepare GeSn materials with a high Sn composition, and it is difficult to obtain high-quality thin films. , increasing the difficulty of growing high-quality GeSn materials

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