A polarization-tunable terahertz photoconductive antenna and its preparation method
A photoconductive antenna, terahertz technology, applied in antennas, antenna parts, antenna supports/installation devices, etc., can solve the problems of complex optical path and low signal-to-noise ratio of the system, reduce the use of polarizers, improve The effect of the signal-to-noise ratio
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Embodiment 1
[0069] Such as figure 1 with figure 2 As shown, a polarization-tunable terahertz photoconductive antenna of the present invention is applied to a terahertz spectroscopy system, including: a semiconductor substrate layer 1, a dielectric layer 2 and a pattern layer;
[0070] The pattern layer is closely attached to the surface of the dielectric layer 2, and the dielectric layer 2 is located on the surface of the semiconductor substrate layer 1;
[0071] The pattern layer includes an electrode structure, and the electrode structure includes four antenna electrodes arranged symmetrically in the center.
[0072] Such as image 3 The four antenna electrodes shown are triangular electrodes. Four isosceles right-angled triangular electrodes are symmetrically arranged in the center obtained by uniform openings along both sides of the diagonal line of a square electrode, and the right angles of the triangular electrodes point to the center of symmetry.
[0073] When the femtosecond ...
Embodiment 2
[0085] This embodiment provides the preparation method of the polarization-tunable terahertz photoconductive antenna in the previous embodiment. The preparation process of the polarization-tunable photoconductive antenna includes the design and preparation of an optical mask, coating the electrode structure by sputtering, and photolithography. Micro-nano structure, IBE etching electrodes, glue removal, and finally cutting to obtain a single polarization-tunable photoconductive antenna structure.
[0086] Specific steps are as follows:
[0087] 1. Feeding preparation. A gallium arsenide wafer prepared by low-temperature growth with a suitable size is selected.
[0088] 2. Spin-coat a layer of photoresist on the LT-GaAs, and then bake at 100°C for 2 minutes.
[0089] 3. Use a soft template with sub-micron precision nano-graphic structure for heat-assisted UV imprinting, so that the metal nano-layer pattern is transferred to the adhesive film, and the soft template is removed; ...
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