Silicon carbide single crystal growth equipment with the function of adjusting the ratio of carbon to silicon in the growth atmosphere

Abstract

The application of the present invention discloses a silicon carbide single crystal growth device with a function of adjusting the ratio of carbon to silicon in a growth atmosphere, comprising a quartz tube, an induction coil and a graphite crucible, the graphite crucible including a silicon carbide powder heating zone, a growth chamber and a seed A crystal support, a second cover plate and a third cover plate are further arranged between the silicon carbide powder heating zone and the growth chamber, and a vertical gas pipe passing through the silicon carbide powder is arranged at the bottom of the silicon carbide powder heating zone . The technical scheme of the application of the present invention adopts the structure of the graphite crucible bottom structure and the multi-cover plate, which realizes the multi-space separation of the heating zone of the silicon carbide powder, changes the output path of the gas components after the sublimation of the silicon carbide powder, and makes the sublimation gas After passing through the silicon carbide powder for many times and forming a continuous large cycle, the silicon carbide powder is repeatedly heated for many times, and the sublimation speed of the silicon-rich component and the carbon-rich component gas is coordinated, thereby obtaining a high-quality silicon carbide single crystal.

Description

technical field [0001] The invention relates to the field of silicon carbide single crystal growth, and more particularly, to a silicon carbide single crystal growth device with the function of adjusting the ratio of carbon to silicon in a growth atmosphere. Background technique [0002] Silicon carbide is a typical representative of the third-generation semiconductor materials. At present, the growth technology of silicon carbide is mainly based on physical vapor transport (PVT). High, the top seed crystal temperature is low, so that an axial temperature gradient is formed inside the crucible, and the silicon carbide powder is heated and sublimated at the bottom of the crucible to realize the growth of silicon carbide single crystal on the seed crystal growth surface. [0003] In the early stage of silicon carbide single crystal growth, the silicon component will preferentially sublime in the crucible, so that the relative silicon content in the silicon carbide powder is ge...

AI Technical Summary

Problems solved by technology

[0003] In the early stage of silicon carbide single crystal growth, the silicon component will be preferentially sublimated in the crucible, making the relative silicon content in the silicon carbide powder lower and lower, resulting in the remaining unsublimated silicon carbide in the silicon carbide powder in the middle and late stages of silicon carbide crystal growth. The powder becomes more and more carbon-rich, and the ratio of carbon to silicon in the growth atmosphere greatly exceeds 1:1, resulting in low silicon flow at the growth surface of the seed crystal, carbonization on the growth surface, and resulting silicon carbide monoliths. The problem of increased defects in the crystal

Images