Method for bonding semiconductor device and heat sink
A semiconductor and heat sink technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems affecting the polarization performance of semiconductor devices, local distortion of semiconductor devices, cracks in semiconductor devices, etc., to reduce The effect of uneven force, reducing stress concentration and reducing stress
Active Publication Date: 2021-11-19
度亘核芯光电技术(苏州)有限公司
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Problems solved by technology
[0003] However, the general semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by the welding of the semiconductor device and the heat sink can easily cause local distortion of the semiconductor device. After the semiconductor device is twisted, it will affect the polarization performance of the semiconductor device. , in severe cases, it may also lead to cracks or breakage of semiconductor devices
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[0033] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.
[0034]In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the usual placement of the application product when it is used. Orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. In addition, the terms "first", "second", etc. are only used for distinguishing descriptions, and should not be constr...
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Abstract
The application provides a method for bonding a semiconductor device and a heat sink, which relates to the field of semiconductor technology, including forming an epitaxial layer on a substrate; the epitaxial layer forms at least one current injection region and non-current injection regions located on both sides of the current injection region, and the current An isolation region is formed between the injection region and the non-current injection region; a metal layer is formed on the epitaxial layer, and the metal layer covers the current injection region, the non-current injection region and the isolation region; multiple conductive and heat-conducting structures are formed on the metal layer, and adjacent conductive and heat-conducting structures There are gaps between the structures, and multiple conductive and heat-conducting structures are provided on each non-current injection area; a welding layer is formed on multiple conductive and heat-conducting structures, and the welding layer covers the conductive and heat-conducting structures, gaps and metal layers; welding heat sink and welding layer . The conductive and heat-conducting structure ensures that the current injection area is free from stress, and reduces the welding stress concentration when welding the heat sink; the formation of the metal layer and the conductive and heat-conducting structure reduces the welding stress of the heat sink and the semiconductor device, and reduces or avoids local distortion of the semiconductor device caused by welding.
Description
technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for bonding a semiconductor device and a heat sink. Background technique [0002] Semiconductor devices will generate heat when they work. In order to make the semiconductor devices dissipate heat in time to ensure the performance of semiconductor devices, heat sinks are often used to dissipate heat from semiconductor devices, and the semiconductor devices and heat sinks are bonded by welding to achieve the purpose of semiconductor device heat dissipation. . [0003] However, the general semiconductor device is thin and slender. When it is bonded to the heat sink, some stress generated by the welding of the semiconductor device and the heat sink can easily cause local distortion of the semiconductor device. After the semiconductor device is twisted, it will affect the polarization performance of the semiconductor device. In severe cases, it may also cau...
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IPC IPC(8): H01L21/50H01L23/373B23K1/00
CPCH01L21/50H01L23/373B23K1/0008B23K2101/40
Inventor 杨国文王希敏
Owner 度亘核芯光电技术(苏州)有限公司
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