Silicon optical transceiver module based on germanium-silicon electric absorption modulator

Abstract

The invention relates to a silicon optical transceiver module based on a germanium-silicon electric absorption modulator. The silicon optical transceiver module comprises an electric chip part and an optical chip part, wherein the optical chip part comprises a transmitting module and a receiving module; the transmitting module comprises a laser, the germanium-silicon electric absorption modulator, a first converter and a first coupler; the germanium-silicon electric absorption modulator is connected with the electric chip part and is used for loading an electric signal passing through the electric chip part on laser emitted by the laser into an optical signal, and the optical signal enters the optical transmission part through the first converter and the first coupler in sequence; the receiving module comprises a germanium-silicon detector, a second converter and a second coupler; the germanium-silicon detector is connected with the electric chip part and is used for detecting the optical signal sequentially passing through the second coupler and the second converter and converting the optical signal into the electric signal; and the germanium-silicon electric absorption modulator and the germanium-silicon detector adopt the same vertical structure. The manufacturing cost can be reduced.

Description

technical field [0001] The invention relates to the technical field of silicon-based optoelectronics, in particular to a silicon optical transceiver module based on a germanium-silicon electroabsorption modulator. Background technique [0002] The currently widely used silicon-based electro-optic modulators are roughly divided into three types: 1. Mach-Zehnder (MZI) modulators based on the free carrier dispersion effect, which have the advantages of large optical bandwidth and high-speed performance. The cut-off frequency can reach 50GHz, but the disadvantage is that the area of ​​the active area is large and the energy consumption is high, and the design of the traveling-wave electrode structure is relatively complicated. 2. The microring modulator has the advantage of compact structure and low device energy consumption. The disadvantage is that the microring modulator is based on the resonance principle, so its optical bandwidth is extremely narrow, and its performance is ...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a silicon optical transceiver module based on a silicon germanium electroabsorption modulator, which is used to solve the problem that the existing silicon optical transceiver module cannot reduce manufacturing costs while improving performance

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