Integrated circuit, DRAM circuit and method for forming same
A technology of integrated circuits and conductive lines, which is applied in the field of forming memory circuits and can solve problems such as the volatility of capacitor insulator materials
Active Publication Date: 2021-09-10
MICRON TECH INC
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- Summary
- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
For example, containing only SiO 2 The capacitor insulator material will be volatile
Method used
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Embodiment Construction
[0012] Embodiments of the invention encompass methods for forming integrated circuits, such as memory circuits. refer to Figures 1 to 34 Example embodiments of methods of forming DRAM circuits are described. refer to Figures 1 to 10 , shows an example substrate construction 8 comprising an array or array region 10 that has been fabricated relative to a base substrate 11 . Substrate 11 may comprise any of conductive / conducting / conducting, semiconducting / semiconducting / semiconducting, and insulating / insulator / insulating (ie, electrically grounded herein) materials. Various materials are over the base substrate 11 . materials are available at Figures 1 to 10 Beside, vertically inside, or vertically outside of the depicted material. For example, other partially fabricated or fully fabricated components of the integrated circuit may be disposed somewhere on, around, or within base substrate 11 . Control and / or other peripheral circuitry for operating components within the me...
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Abstract
The application relates to an integrated circuit, a dram circuit and a method for forming the same. A method for forming an integrated circuit includes forming conductive line structures having conductive vias laterally between and longitudinally spaced along adjacent conductive line structures. A first insulating material is formed laterally between adjacent conductive vias. A second insulating material is formed directly over the first insulating material and directly over the conductive via. The second insulating material includes silicon, carbon, nitrogen and hydrogen. A third material is formed directly over the second insulating material. The third material and the second insulating material include different compositions with respect to each other. The third material is removed directly from over the second insulating material and thereafter the thickness of the second insulating material is reduced. A fourth insulating material is formed directly over the reduced-thickness second insulating material. A plurality of electronic components are formed over the fourth insulating material and are individually electrically coupled directly to individual conductive vias through the fourth insulating material and the second insulating material.
Description
technical field [0001] Embodiments disclosed herein relate to integrated circuits, DRAM circuits, methods for forming integrated circuits, and methods for forming memory circuits. Background technique [0002] Memory is a type of integrated circuit and is used in computer systems to store data. Memory can be fabricated in one or more arrays of individual memory cells. Memory cells can be written to or read from memory cells using digit lines (which can also be referred to as bit lines, data lines, or sense lines) and access lines (which can also be referred to as word lines). Digit lines can conductively interconnect the memory cells along the columns of the array, and access lines can conductively interconnect the memory cells along the rows of the array. Each memory cell is uniquely addressable through a combination of digit and access lines. [0003] Memory cells may be volatile, semi-volatile, or non-volatile. Non-volatile memory cells can store data for extended per...
Claims
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IPC IPC(8): H01L27/108G11C11/401H10B12/00
CPCG11C11/401H10B12/34H10B12/373H10B12/01H10B12/0387H10B12/053H10B12/315H10B12/0335H10B12/482H01L21/76886H01L21/76837H01L21/02126H01L21/76801H01L21/76885H01L21/76834H10B12/48
Inventor 石上仁志兵头贤太郎
Owner MICRON TECH INC