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Improved method and device for synthesizing trichlorosilane through cold hydrogenation

A trichlorosilane, chemical synthesis technology, applied in chemical instruments and methods, silicon compounds, silicon halide compounds, etc., can solve problems such as large deviations and increased cost of cold hydrogenation

Active Publication Date: 2021-09-14
INNER MONGOLIA XINTE SILICON MATERIAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large deviation between the single-pass conversion rate of silicon tetrachloride in actual production and the theoretical conversion rate, the cost of cold hydrogenation is greatly increased

Method used

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  • Improved method and device for synthesizing trichlorosilane through cold hydrogenation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides an improved cold hydrogenation device for synthesizing trichlorosilane, including:

[0036] The first reactor is used to feed preheated silicon tetrachloride, hydrogen, and hydrogen chloride. The first reactor is also used to feed excess silicon powder for mixing and chlorination reaction to generate trichlorosilane. obtaining a first gas phase mixture;

[0037] a gas-solid separator connected to the first reactor, the gas-solid separator is used to separate the first gas-phase mixture into gas-solid, and discharge the solid obtained from the gas-solid separation;

[0038] The heater is connected to the gas phase outlet of the gas-solid separator, and the heater is used to heat the gas phase discharged from the gas phase outlet of the gas-solid separator;

[0039] The second reactor is connected with the heater, and the second reactor is used to mix the heated gas-solid separated gas phase with excess silicon powder to undergo a cold hydrogenat...

Embodiment 2

[0045] Such as figure 1 As shown, the present embodiment provides an improved cold hydrogenation device for synthesizing trichlorosilane, including:

[0046] The first reactor 3 is used to feed preheated silicon tetrachloride, hydrogen, and hydrogen chloride. The first reactor 3 is also used to feed excess silicon powder for mixing and chlorination reaction to generate trichlorohydrogen. Silicon, to obtain the first gas phase mixture;

[0047] A gas-solid separator 6 is connected to the first reactor 3, and the gas-solid separator 6 is used for performing gas-solid separation of the first gas-phase mixture, and discharging the solid obtained by the gas-solid separation;

[0048] The heater 9 is connected with the gas phase outlet of the gas-solid separator 6, and the heater 9 is used to heat the gas phase discharged from the gas phase outlet of the gas-solid separator 6;

[0049] The second reactor 10 is connected with the heater 9, and the second reactor 10 is used to mix t...

Embodiment 3

[0072] This embodiment provides a kind of method that uses the improved cold hydrogenation synthesis trichlorosilane of the device in embodiment 2, and the difference with the method in embodiment 2 is:

[0073] The temperature of preheated silicon tetrachloride, hydrogen, and hydrogen chloride in step 2) is 380° C., the mol ratio of preheated silicon tetrachloride, hydrogen, and hydrogen chloride is 3.0:2.2:0.3, and the pressure of the chlorination reaction is 2.5 MPa.

[0074] The heating temperature in step 3) is 550° C., and the pressure of the cold hydrogenation reaction is 2 MPa.

[0075] The yield per pass of trichlorosilane in this example is 32%.

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Abstract

The invention discloses an improved method and device for synthesizing trichlorosilane through cold hydrogenation. The method comprises the following steps: 1) mixing preheated silicon tetrachloride, hydrogen and hydrogen chloride with excessive silicon powder, and carrying out a chlorination reaction to mainly generate trichlorosilane so as to obtain a first gas-phase mixture; and 2) carrying out gas-solid separation on the first gas-phase mixture, discharging the solid obtained by gas-solid separation, heating the gas phase obtained by gas-solid separation, mixing with excessive silicon powder, and carrying out cold hydrogenation reaction to mainly generate trichlorosilane so as to obtain a second gas-phase mixture. According to the method disclosed by the invention, the reaction of hydrogen chloride and silicon powder is promoted to move towards the direction of generating trichlorosilane in the reaction process, so that the conversion rate of trichlorosilane in the chlorination reaction process is improved, and the single-pass conversion rate of converting silicon tetrachloride into trichlorosilane in the whole method is improved. Reaction heat in the chlorination reaction process serves as a heat source to heat mixed gas, the heat compensation amount of the cold hydrogenation reaction system is reduced, and the energy consumption of the cold hydrogenation reaction system is reduced.

Description

technical field [0001] The invention belongs to the technical field of trichlorosilane production, and in particular relates to an improved method and device for synthesizing trichlorosilane by cold hydrogenation. Background technique [0002] In the polysilicon production process, regardless of the improved Siemens method or the silane method, a large amount of silicon tetrachloride will be generated. In order to avoid environmental pollution caused by silicon tetrachloride, it needs to be recycled and utilized. The existing technology uses The method of cold hydrogenation converts silicon tetrachloride into trichlorosilane, the raw material for producing polysilicon, so that the production process of polysilicon forms a closed loop, which not only reduces environmental pollution, but also greatly reduces production costs. [0003] The chemical reaction equation of the cold hydrogenation process is as follows: [0004] 3SiCl 4 +2H 2 +Si=4SiHCl 3 [0005] In the laborat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
CPCC01B33/1071
Inventor 武珠峰宋高杰高镇熙刘兴平宋正平吴昌勇何隆
Owner INNER MONGOLIA XINTE SILICON MATERIAL CO LTD
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