Check patentability & draft patents in minutes with Patsnap Eureka AI!

Protection device and method for insulated gate bipolar transistor

A technology of bipolar transistors and protection devices, applied in emergency protection circuit devices, output power conversion devices, electrical components, etc., can solve the problems of IGBTs being easily damaged and IGBTs damaged

Pending Publication Date: 2021-09-14
OMRON SHANGHAI
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] IGBTs are widely used in power electronics, but if there is no suitable protection circuit, IGBTs are easily damaged. Overcurrent and short circuit (such as direct connection between the upper and lower bridge arms in the inverter circuit) are common causes of IGBT damage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Protection device and method for insulated gate bipolar transistor
  • Protection device and method for insulated gate bipolar transistor
  • Protection device and method for insulated gate bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The foregoing and other features of the present application will become apparent from the following description, with reference to the accompanying drawings. In the specification and drawings, specific embodiments of the present application are specifically disclosed, which indicate some embodiments in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described embodiments, on the contrary, the present application The application includes all amendments, variations and equivalents that come within the scope of the appended claims.

[0045] In this embodiment of the application, the terms "first", "second", etc. are used to distinguish different elements from the title, but do not indicate the spatial arrangement or time order of these elements, and these elements should not be referred to by these terms restricted. The term "and / or" includes any and all combinations of one or more ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a protection device and method for an insulated gate bipolar transistor. The protection device comprises: an acquisition circuit which acquires a driving signal of an IGBT, performs delay processing under the condition that the driving signal is a first level for turning on the IGBT or a second level for turning off the IGBT is converted into the first level for turning on the IGBT, and outputs a first signal according to the signal after delay processing and the driving signal; a detection circuit used for detecting the voltage between the collector electrode and the emitter electrode of the IGBT and outputting a second signal according to the voltage and a preset threshold value; and a determination circuit which outputs an alarm signal or a protection signal when both the first signal and the second signal are valid. Therefore, time delay processing can be carried out with a simple structure without influencing a driving signal, the performance of the IGBT can be improved, the cost of a protection circuit can be reduced, and the controllability of IGBT control can be improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular to a protection device and method for an insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor). Background technique [0002] IGBTs are widely used in power electronics, but if there is no suitable protection circuit, IGBTs are easily damaged. Overcurrent and short circuit (such as direct connection between the upper and lower bridge arms in the inverter circuit) are common causes of IGBT damage. . [0003] At present, some protection circuits for IGBTs have appeared. For example, in Reference 1, a double protection mechanism of interlock and time delay is proposed on the hardware to avoid the situation that the upper and lower bridge arms of the IGBT are directly connected. [0004] Reference 1: CN106385009A. [0005] It should be noted that the above introduction to the background technology is only for the convenience of a clear and c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02H7/20H02H7/12H02M1/32H02M1/08
CPCH02H7/205H02H7/1203H02M1/32H02M1/08H03K17/0828H03K17/18
Inventor 刘杰
Owner OMRON SHANGHAI
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com