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Uncooled titanium oxide CMOS infrared detector

An infrared detector and titanium oxide technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and poor consistency, and achieve the effects of reducing process difficulty, small chip area, and low cost

Pending Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0010] In order to solve the above technical problems or at least partly solve the above technical problems, the present disclosure provides an uncooled titanium oxide CMOS infrared detector, which solves the problems of low performance, low pixel scale, low yield and consistent Poor performance and other problems, which is conducive to simplifying the preparation process of infrared detectors

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  • Uncooled titanium oxide CMOS infrared detector
  • Uncooled titanium oxide CMOS infrared detector
  • Uncooled titanium oxide CMOS infrared detector

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Embodiment Construction

[0056] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0057] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0058] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. com...

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Abstract

The invention relates to an uncooled titanium oxide CMOS infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, and a columnar structure in the infrared detector is a hollow columnar structure. The absorption plate comprises a first dielectric layer, an electrode layer, a heat-sensitive dielectric layer and a second dielectric layer, the electrode layer and the heat-sensitive dielectric layer are arranged on the same layer, the electrode layer is made of titanium, and the heat-sensitive dielectric layer is made of titanium oxide; or, the electrode layer is made of highly-doped titanium oxide, and the heat-sensitive dielectric layer is made of titanium oxide. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, and the preparation technology of the infrared detector can be simplified.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an uncooled titanium oxide CMOS infrared detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is prepared by ME...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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