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Micro-bridge structure infrared detector

A technology of infrared detector and microbridge structure, which is applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and poor consistency, and achieve the effects of high detection sensitivity, small chip area, and low cost

Active Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a micro-bridge structure infrared detector, which solves the problem of traditional MEMS process infrared detectors. Problems such as low performance, low pixel size, low yield and poor consistency have improved the absorption rate of the micro-bridge structure infrared detector to the incident infrared electromagnetic wave, optimized the performance of the micro-bridge structure infrared detector, and reduced the micro-bridge structure infrared The Difficulty of Detector Optical Design

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Embodiment Construction

[0059] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0060] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0061] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel with a microbridge structure provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of a micro-bridge structure infrared detector pixel provid...

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Abstract

The invention relates to a micro-bridge structure infrared detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the micro-bridge structure infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, and a columnar structure in the micro-bridge structure infrared detector is a hollow columnar structure. The columnar structure at least comprises an electrode layer, and each of the absorption plate and the beam structure at least comprises a first dielectric layer, an electrode layer and a second dielectric layer; and the infrared detector with the micro-bridge structure further comprises a metamaterial structure and / or a polarization structure. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, the absorption rate of the infrared detector of the micro-bridge structure to incident infrared electromagnetic waves is improved, the performance of the infrared detector of the micro-bridge structure is optimized, and the difficulty of optical design of the infrared detector with the micro-bridge structure is reduced.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector with a microbridge structure. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector with microbridge structure adopts the combination of measurement circuit and infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing structure is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24
Inventor 翟光杰潘辉武佩翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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