Method and device for inversion of exciton characteristic parameters of light-emitting device
A technology of light-emitting devices and characteristic parameters, which is applied in the direction of testing optical performance, special data processing applications, design optimization/simulation, etc., can solve the problem of difficulty in obtaining the approximate shape of the exciton distribution, whether the approximate shape of the exciton distribution is correct or not, The accuracy and robustness of the exciton characteristic parameters of light-emitting devices are poor, and the results of robust inversion, high electron mobility, and good robustness are achieved
Active Publication Date: 2022-05-20
武汉宇微光学软件有限公司
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[0004] Aiming at the defects of the prior art, the object of the present invention is to provide a method and device for inverting the exciton characteristic parameters of a light-emitting device, aiming to solve the problem that in the existing method for obtaining the exciton characteristic parameters, the inverse inversion method uses an optical model to reverse The inversion needs to know the approximate shape of the exciton distribution in advance, and it is usually difficult to obtain the approximate shape of the exciton distribution, and it is also difficult to check whether the approximate shape of the exciton distribution is correct, so the obtained light-emitting device exciton characteristic parameters Problems with poor accuracy and robustness
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[0090] In this embodiment, the light-emitting device is a bottom-emitting green light OLED device, and the film thickness structure can be described as: Ag (20nm) / MgAg (100nm) / ETL (50nm) / EML (30nm) / HTL (50nm) / PEDOT:PSS( 30nm) / ITO(160nm) / Glass(Incoherence). Since it is difficult to obtain an accurate solution for the excitonic characteristic parameters in an actual light-emitting device, this embodiment adopts a method of adding noise to the simulation data as the experimental data to facilitate the verification of the reverse inversion result. The current density during simulation is 10mA / cm 2 , the carrier balance rate is 1, the exciton recombination probability is 1, the orientation is set to Θ=0.28, and the exciton distribution function is Gaussian distribution Wherein, the amplitude a=1, the mean b=0.6, and the variance c=2nm. Due to errors in the actual measurement process, Gaussian noise with a signal-to-noise ratio of 30:1 is introduced into the far-field radiation s...
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Abstract
The invention provides an inversion method and device for exciton characteristic parameters of a light-emitting device, belonging to the field of light-emitting devices. Forward model; adjust the thickness of the ETL film in the forward model, and screen out the first ETL film thickness set that is sensitive to the exciton distribution function; based on the actual measured TE polarization state far-field viewing angle spectrum and based on the final ETL film thickness acquisition The theoretical TE polarization state far-field viewing angle spectrum, combined with the linear fitting method and the nonlinear fitting method, obtains the final exciton distribution function of the light-emitting device; based on the final exciton distribution function and the actual measured TE polarization state far-field viewing angle spectrum , and the exciton orientation parameters are obtained by least squares inversion. The invention does not need to obtain the initial shape of the excitons distribution in advance, and realizes the accurate and robust inversion of the characteristic parameters of the light-emitting device.
Description
technical field [0001] The invention belongs to the field of light-emitting devices, and more specifically relates to a method and device for retrieving exciton characteristic parameters of a light-emitting device. Background technique [0002] As we all know, whether it is a light-emitting diode (Light Emitting Diode, LED), an organic light-emitting diode (Organic Light Emitting Diode, OLED) or a quantum dot light-emitting diode (Quantum Dot LightEmitting Diodes, QLED), its working principle is that under the action of an applied voltage, electrons The electrons and holes overcome the surface energy barrier, pass through functional layers such as the electron transport layer and the hole transport layer respectively, and recombine into excitons in the light-emitting layer, and finally the excitons radiate to generate photons. From an optical point of view, since the excitons mainly radiate the electromagnetic field in the direction perpendicular to the dipole moment, the ra...
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IPC IPC(8): G01M11/02G01J3/28G06F30/20
CPCG01M11/02G01J3/28G06F30/20
Inventor 谷洪刚陈林雅刘世元柯贤华江浩
Owner 武汉宇微光学软件有限公司
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