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An intrinsically stretchable n-type interface material and its preparation method and application

An interface material, n-type technology, applied in the direction of sustainable manufacturing/processing, final product manufacturing, climate sustainability, etc., can solve the problems of phase separation, poor stretching effect, etc., and achieve high stability and high film formation , high stretch effect

Active Publication Date: 2022-07-01
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the stretched n-type interface materials are prepared by physical blending, which is easy to cause phase separation, and the stretching effect is poor.

Method used

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  • An intrinsically stretchable n-type interface material and its preparation method and application
  • An intrinsically stretchable n-type interface material and its preparation method and application
  • An intrinsically stretchable n-type interface material and its preparation method and application

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preparation example Construction

[0033] A method for preparing an intrinsically stretchable n-type interface material, characterized in that, the material takes the acceptor unit Ar and polyethyleneimine (PEI) as the building units, and under the conditions of organic solvents, additives and initiators, through Polymerization to prepare intrinsically stretchable n-type interface materials.

[0034] The stretchable n-type interface material provided in this embodiment may have the following structure:

[0035]

[0036]

[0037]

[0038]

Embodiment 1-1

[0040] Preparation of interface material S1:

[0041]

[0042] Put PEI (2 g, 2.5 mmol), NDI (1.34 g, 5 mmol), and imidazole (2 g, 29 mmol) into a 100 mL two-necked flask, seal the reaction flask, and react at 130° C. for 5 h. After the reaction was completed, it was cooled to room temperature, 30 mL of ethanol and 2M HCl were added, and 30 mL of HCl was added and stirred at room temperature for 12 h, then washed with methanol and suction filtered. Finally, the interface material was put into a dialysis bag and immersed in toluene for dialysis for 12 h. After drying, the product S1 (2.91 g, 69% yield).

Embodiment 1-2

[0044] Preparation of interface material S2:

[0045]

[0046] Put PEI (2g, 2.5mmol), ADI (1.6g, 5mmol) and imidazole (2g, 29mmol) into a 100mL two-necked flask, seal the reaction flask, and react at 130°C for 5h. After the reaction was completed, it was cooled to room temperature, 30 mL of ethanol and 2M HCl were added, and 30 mL of HCl was added and stirred at room temperature for 12 h, then washed with methanol and suction filtered. Finally, the interface material was put into a dialysis bag and soaked in toluene for dialysis for 12 h. After drying, the product S2 (2.66 g, 74% yield).

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Abstract

The invention discloses an intrinsically stretchable n-type interface material and a preparation method and application thereof. The material uses organic acceptor units and polyethyleneimine as raw materials, and is prepared by polymerization. The invention discloses an intrinsically stretchable n-type interface material prepared by chemical cross-linking. On the basis of stretchability, it has excellent electron transport properties and high electron mobility at the same time. Compared with traditional elastic materials or linear intrinsic stretchable interface materials, cross-linked network intrinsic stretchable interface materials can form a chemically covalently cross-linked network, which further improves the material's stretchability, electron transport and performance. stability. Such materials can be used as n-type interface layer materials to prepare organic optoelectronic devices with high stability, high stretchability and high efficiency.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and applications, and in particular relates to an intrinsically stretchable n-type interface material and a preparation method and application thereof. Background technique [0002] As an emerging cutting-edge technology, stretchable electronics have broad application prospects in the fields of smart home, biomedicine, information energy, and wearable devices. The development of stretchable electronic technology will drive the overall upgrading of electronic circuits, semiconductor materials, device packaging and other industries, enhance the added value of the industry, and bring revolutionary changes to people's production and life. Stretchable optoelectronic devices have attracted extensive attention as important carriers of stretchable electrons. Stretchable optoelectronic devices generally include an electrode layer, an optoelectronic functional layer and an interface layer....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G73/10C08G73/06H01L51/46H01L51/48H01L51/54H01L51/56
CPCC08G73/1082C08G73/0672C08G73/1085H10K71/12H10K85/111H10K85/113H10K85/151Y02P70/50
Inventor 赖文勇闵洁李祥春刘芳王倩
Owner NANJING UNIV OF POSTS & TELECOMM