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Intrinsic stretchable n-type interface material, and preparation method and application thereof

An interface material, n-type technology, applied in the direction of sustainable manufacturing/processing, climate sustainability, final product manufacturing, etc., can solve problems such as poor stretching effect, phase separation, etc., and achieve high film-forming properties and high stability , Improving the effect of intrinsic stretchability

Active Publication Date: 2021-10-08
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the stretched n-type interface materials are prepared by physical blending, which is easy to cause phase separation, and the stretching effect is poor.

Method used

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  • Intrinsic stretchable n-type interface material, and preparation method and application thereof
  • Intrinsic stretchable n-type interface material, and preparation method and application thereof
  • Intrinsic stretchable n-type interface material, and preparation method and application thereof

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Experimental program
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preparation example Construction

[0033] A method for preparing an intrinsically stretchable n-type interface material, characterized in that the material takes acceptor unit Ar and polyethyleneimine (PEI) as building units, and under the conditions of an organic solvent, an additive and an initiator, through Polymerization to prepare intrinsically stretchable n-type interface materials.

[0034] The stretchable n-type interface material provided in this embodiment may have the following structure:

[0035]

[0036]

[0037]

[0038]

Embodiment 1-1

[0040] Preparation of interface material S1:

[0041]

[0042] Put PEI (2g, 2.5mmol), NDI (1.34g, 5mmol) and imidazole (2g, 29mmol) into a 100mL two-neck flask, seal the reaction flask, and react at 130°C for 5h. After the reaction was completed, cool to room temperature, add 30mL of ethanol and 30mL of 2M HCl and stir at room temperature for 12h, then wash with methanol and filter with suction, and finally put the interface material into a dialysis bag and soak it in toluene for dialysis for 12h. After drying, the product S1 (2.91g, Yield 69%).

Embodiment 1-2

[0044] Preparation of interface material S2:

[0045]

[0046] Put PEI (2g, 2.5mmol), ADI (1.6g, 5mmol) and imidazole (2g, 29mmol) into a 100mL two-neck flask, seal the reaction flask, and react at 130°C for 5h. After the reaction, cool to room temperature, add 30mL of ethanol and 30mL of 2M HCl and stir at room temperature for 12h, then wash and filter with methanol, and finally put the interface material into a dialysis bag, soak it in toluene and dialyze for 12h, and obtain the product S2 (2.66g, Yield 74%).

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Abstract

The invention discloses an intrinsic stretchable n-type interface material, and a preparation method and application thereof. The material is prepared by taking an organic acceptor unit and polyethyleneimine as raw materials through polymerization reaction. The invention discloses the intrinsic stretchable n-type interface material prepared in a chemical cross-linking mode. The preparation method of the intrinsic stretchable n-type interface material comprises the step of introducing an acceptor unit into a cross-linked network type elastic material in a chemical polymerization mode, so on the basis of improving the intrinsic stretchable performance of the interface material, excellent electron transmission characteristics and high electron mobility are realized. Compared with a traditional elastic material or a straight chain type intrinsic stretchable interface material, the cross-linked network type intrinsic stretchable interface material can form a chemical covalent cross-linked network, and the stretchability, the electron transport property and the stability of the material are further improved. The material can be used as an n-type interface layer material to prepare an organic photoelectric device with high stability, high stretchability and high efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and applications, and in particular relates to an intrinsically stretchable n-type interface material and its preparation method and application. Background technique [0002] As an emerging cutting-edge technology, stretchable electronics has broad application prospects in the fields of smart home, biomedicine, information energy, and wearable devices. The development of stretchable electronic technology will drive the overall upgrading of electronic circuits, semiconductor materials, device packaging and other industries, enhance the added value of the industry, and bring revolutionary changes to people's production and life. Stretchable optoelectronic devices, as an important carrier of stretchable electronics, have attracted extensive attention. Stretchable optoelectronic devices generally include electrode layers, optoelectronic functional layers, and interface layers. The sy...

Claims

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Application Information

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IPC IPC(8): C08G73/10C08G73/06H01L51/46H01L51/48H01L51/54H01L51/56
CPCC08G73/1082C08G73/0672C08G73/1085H10K71/12H10K85/111H10K85/113H10K85/151Y02P70/50
Inventor 赖文勇闵洁李祥春刘芳王倩
Owner NANJING UNIV OF POSTS & TELECOMM