High-strength bonding structure with special groove and preparation method of high-strength bonding structure

A bonding structure and high-strength technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as high production cost, chip failure, solder overflow, etc., to improve bonding strength and prevent phase Short-circuit between adjacent metals and prevent solder overflow
CN113506784AInactive Publication Date: 2021-10-15NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Publication Date
2021-10-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a high-strength bonding structure with a special groove and a preparation method of the high-strength bonding structure. The preparation method comprises the following steps: manufacturing a groove type bonding structure on a silicon-based substrate by adopting a dry etching technology; and then depositing adhesion layer metal and bonding layer metal on the groove structure, and carrying out wafer-level bonding on the adhesion layer metal and the bonding layer metal on the other silicon-based substrate so as to realize high-strength bonding between wafers. According to the method, the failure risk generated in the chip stacking process due to low bonding strength is avoided, and a wafer-level stacking solution can be provided for a three-dimensional integrated microsystem.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer-level bonding structure and a preparation method thereof. Background technique

[0002] The bonding process based on solder system is a wafer-level bonding technology widely used in the field of semiconductor manufacturing. By making metal solder for bonding between bonded wafers, the bonding process is completed at a temperature not higher than 300°C to achieve high-reliability, high-strength bonding between wafers, providing a three-dimensional integrated microsystem Efficient and reliable wafer-level stacking solution. At present, the main solders used are AuSn, AgSn, AgIn and other solders. In comparison, AuSn solder has higher structural strength and better creep resistance.

[0003] However, most of the wafer-level deposition methods of alloy solder have relatively high production costs. Therefore, the current mainstream solder bonding scheme i...

Claims

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