Calculation method of secondary electron yield based on first principle

A technology of secondary electrons and calculation methods, which is applied in computational theoretical chemistry, computer material science, complex mathematical operations, etc., can solve problems such as deviation, difficulty in obtaining experimental optical data, and difficulty in simulating the electronic motion process. The effect of good promotion value
CN113517032APending Publication Date: 2021-10-19XIAN INSTITUE OF SPACE RADIO TECH

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
XIAN INSTITUE OF SPACE RADIO TECH
Publication Date
2021-10-19

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a secondary electron yield calculation method based on a first principle, and the method comprises the steps: obtaining an energy loss function and a surface work function of a material through the calculation of the first principle; and tracking each scattering collision process of each electron in the material according to the energy loss function and the surface work function by using a Monte Carlo simulation method, and obtaining the secondary electron yield of the material by counting all emergent electrons. According to the method, secondary electron calculation does not need to depend on experimental data any more, if parameters related to materials are obtained through experiments, the cost is high, the bottleneck is broken, and a backstepping fitting method for measuring the secondary electron emission coefficient through the experiments is not adopted; and the method has good universality and popularization value.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a calculation method of secondary electron yield. Background technique

[0002] In recent years, with the development of some electronic industries such as space electronics technology, high-energy physics experiments, and surface microanalysis technology, secondary electron emission, as a widespread physical phenomenon, has attracted more and more extensive research. At present, many problems are caused by the emission of secondary electrons, such as the electron cloud of the particle accelerator, the electrification of the surface of the space vehicle, and the performance degradation of components, especially the micro-discharge effect of high-power microwave components. Due to the variety of materials and the limitation of test conditions, it is of great significance to accurately calculate the secondary electron emission yield of materials without relying on experimental measurements for predicting and avoiding secondary el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More