Calculation method of secondary electron yield based on first principle
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XIAN INSTITUE OF SPACE RADIO TECH
- Publication Date
- 2021-10-19
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention relates to a calculation method of secondary electron yield. Background technique
[0002] In recent years, with the development of some electronic industries such as space electronics technology, high-energy physics experiments, and surface microanalysis technology, secondary electron emission, as a widespread physical phenomenon, has attracted more and more extensive research. At present, many problems are caused by the emission of secondary electrons, such as the electron cloud of the particle accelerator, the electrification of the surface of the space vehicle, and the performance degradation of components, especially the micro-discharge effect of high-power microwave components. Due to the variety of materials and the limitation of test conditions, it is of great significance to accurately calculate the secondary electron emission yield of materials without relying on experimental measurements for predicting and avoiding secondary el...