Calculation method of secondary electron yield based on first principle

A technology of secondary electrons and calculation methods, which is applied in computational theoretical chemistry, computer material science, complex mathematical operations, etc., can solve problems such as deviation, difficulty in obtaining experimental optical data, and difficulty in simulating the electronic motion process. The effect of good promotion value

Pending Publication Date: 2021-10-19
XIAN INSTITUE OF SPACE RADIO TECH
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Problems solved by technology

The momentum transfer and energy exchange in the inelastic scattering process of electrons based on the superposition theory of dispersion-relational plane waves can be obtained according to the energy loss function, while the energy loss spectrum of dielectric materials often depends on the experimental optical data that is difficult to obtain, so many materials (especially my country's aerospace The inelastic scattering process of the unique material of the load cannot be calculated, which eventually makes it difficult to simulate the whole process of the movement of electrons in the material, and the obtained simulation results of scattered charges have a large deviation from the actual situation.

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  • Calculation method of secondary electron yield based on first principle
  • Calculation method of secondary electron yield based on first principle
  • Calculation method of secondary electron yield based on first principle

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Embodiment Construction

[0026] The present invention will be further elaborated below in conjunction with embodiment.

[0027] Firstly, according to the lattice type, lattice length, element type and composition of the material, and using the pseudopotential of each atom, the exchange correlation energy of the material is obtained, and the convergence is obtained by iteratively solving the Cohen-Shen Lujiu equation The electron density functional of the material can be used to obtain the electron energy loss function in the material and the work function of the material surface. Then, the Monte Carlo simulation method is used to track the whole excitation and emission process of the internal electrons, and finally, the secondary electron emission yield that does not depend on the experimental data is obtained.

[0028] The present invention is a calculation method of secondary electron yield based on first principles, adopting a first principle calculation method that does not depend on experimental ...

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Abstract

The invention relates to a secondary electron yield calculation method based on a first principle, and the method comprises the steps: obtaining an energy loss function and a surface work function of a material through the calculation of the first principle; and tracking each scattering collision process of each electron in the material according to the energy loss function and the surface work function by using a Monte Carlo simulation method, and obtaining the secondary electron yield of the material by counting all emergent electrons. According to the method, secondary electron calculation does not need to depend on experimental data any more, if parameters related to materials are obtained through experiments, the cost is high, the bottleneck is broken, and a backstepping fitting method for measuring the secondary electron emission coefficient through the experiments is not adopted; and the method has good universality and popularization value.

Description

technical field [0001] The invention relates to a calculation method of secondary electron yield. Background technique [0002] In recent years, with the development of some electronic industries such as space electronics technology, high-energy physics experiments, and surface microanalysis technology, secondary electron emission, as a widespread physical phenomenon, has attracted more and more extensive research. At present, many problems are caused by the emission of secondary electrons, such as the electron cloud of the particle accelerator, the electrification of the surface of the space vehicle, and the performance degradation of components, especially the micro-discharge effect of high-power microwave components. Due to the variety of materials and the limitation of test conditions, it is of great significance to accurately calculate the secondary electron emission yield of materials without relying on experimental measurements for predicting and avoiding secondary el...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G16C10/00G16C60/00G06F17/15
CPCG16C10/00G16C60/00G06F17/15
Inventor 封国宝李小军李琪李韵王琪杨晶苗光辉
Owner XIAN INSTITUE OF SPACE RADIO TECH
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