Novel low-inductance SiC Mosfet vehicle power module

Abstract

The invention discloses a novel low-inductance SiC Mosfet vehicle power module. The novel low-inductance SiC Mosfet vehicle power module comprises a power module body, wherein the power module body mainly comprises an insulating ceramic substrate and a SiC Mosfet chip arranged on the insulating ceramic substrate, the back surface of the chip is connected to a conductive copper layer power circuit etching area of the insulating ceramic substrate through a silver sintering surface, a front power electrode of the chip is connected with copper foil through the silver sintering surface, the upper surface of the copper foil is connected to the conductive copper layer power circuit etching area of the insulating ceramic substrate through a copper wire, and a signal electrode of the chip and a conductive copper layer signal circuit etching area of the insulating ceramic substrate are subjected to signal and control circuit electrical connection through an aluminum wire; and a copper signal terminal is arranged on the front surface of the insulating ceramic substrate, a heat dissipation copper substrate is arranged on the back surface of the insulating ceramic substrate, an injection molding shell is arranged on the heat dissipation copper substrate, and high-temperature silica gel is arranged in the injection molding shell and is sealed through a plastic upper cover.

Description

technical field [0001] The invention relates to the technical field of power modules, in particular to a novel low-inductance SiC Mosfet vehicle power module. Background technique [0002] SiC Mosfet has many advantages over traditional Si Mosfet, but its expensive price limits the wide application of SiC Mosfet. In recent years, with the maturity of SiC technology, the price of SiC Mosfet has dropped significantly, and the application range has been further expanded. It will become a new generation of mainstream low-loss power devices in the near future. In the actual engineering application and design and development process, it is often necessary to analyze the switching characteristics, static characteristics and power loss of SiC Mosfet in order to effectively evaluate the efficiency of the entire system. Therefore, it is necessary to establish an accurate SiC Mosfet model as the basis for system analysis and efficiency evaluation in engineering applications. In recen...

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Problems solved by technology

[0002] SiC Mosfet has many advantages over traditional Si Mosfet, but its expensive price limits the wide application of SiC Mosfet

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