High-thermal-conductivity silicon carbide device packaging structure and method

Abstract

The invention discloses a high-thermal-conductivity silicon carbide device packaging structure and method, and solves the problem that the stability and normal use of a silicon carbide device structure are not facilitated due to the fact that the heat generation amount is increased along with the increase of the power of the silicon carbide device in an existing silicon carbide device packaging structure. The packaging structure comprises a heat sink, a bonding layer, a metal layer, an insulating substrate, a circuit layer and a miniature thermocouple arm. The surface of the heat sink is connected with the metal layer through the bonding layer, the surface of the metal layer is connected with the insulating substrate through the bonding layer, the surface of the insulating substrate is connected with the circuit layer through the bonding layer, and the miniature thermocouple arm is mounted at the bottom end of the heat sink through a bolt.

Description

technical field [0001] The invention relates to the field of silicon carbide device packaging, in particular to a high thermal conductivity silicon carbide device packaging structure and method. Background technique [0002] Silicon carbide power semiconductor devices usually include silicon chips, semiconductor circuits, circuit substrates and heat sinks. Silicon carbide semiconductor devices can operate stably at temperatures ranging from 250°C to 300°C, which can significantly increase the output of power devices. The circuit board has insulating properties and is composed of aluminum nitride, etc., which have high thermal conductivity. Heat sinks have higher thermal conductivity and ensure easier mass-manufactured heat dissipation devices, such as Cu, Al, Cu-Mo or Cu-W. The components are bonded together using adhesives, solder, and the like. The metal layer is located between the chip and the heat sink, and undertakes the dual functions of heat dissipation transition...

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Problems solved by technology

[0004] In view of the above situation, in order to overcome the defects of the prior art, the present invention provides a high thermal conductivity silicon carbide device packaging structure and method, which effectively solves the problem of the existing silicon carbide device packaging structure. With the increase of the power of silicon carbide devices , the amount of heat generated increases, which is not conducive to the stability of the structure of silicon carbide devices and the problems of normal use

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