A kind of pim device and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof, including a copper-clad ceramic substrate and a three-phase rectifier unit, a three-phase inverter unit, a braking unit and a temperature control unit arranged on the copper-clad ceramic substrate. Detect NTC devices; the three-phase rectification unit includes six diode chips arranged on the copper-clad ceramic substrate and the clip copper sheets corresponding to the six diode chips; the three-phase inverter unit includes six IGBT chips, six and six One IGBT chip one-to-one corresponding clip emitter copper sheet and six clip control electrode copper sheets corresponding to six IGBT chips one-to-one; braking unit includes diode chip VII, IGBT chip VII, clip copper sheet, clip emitter copper sheet sheet and clip control pole copper sheet. The PIM device of this technical solution has a compact structure and is easy to use. Applying the PIM device to related circuits can simplify the circuit structure. Based on the clip technology adopted by the PIM device, the performance of the PIM device is stable, which further makes the circuit using the PIM device safe and reliable. .

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof. Background technique [0002] PIM circuit is a functional circuit that integrates rectifier circuit, inverter circuit, brake circuit and temperature control switch. ) connected, the circuit is large in size and complex in structure, prone to failure and difficult to maintain. Therefore, the IGBT power integrated module PIM (PowerIntergrated Mondule) has gradually replaced the traditional PIM circuit. The distributed inductance, and the PIM module simplifies the installation process and facilitates maintenance. At present, 25A / 40A / 50A / 75A PIM modules are mostly used in the market for low-power frequency conversion lines below 15kW, which are mainly used in frequency converters, servo motors, frequency conversion household appliances, medical systems and other fields. With the rapid development of the frequency conver...

AI Technical Summary

Problems solved by technology

[0003] 1. In the hardware structure of the internal circuit of the PIM device, the aluminum wire process is generally used. Due to the high power of the IGBT chip application, the current density of the aluminum wire process is low, the conduction capacity is poor, the resistance value is high, and the welding area is prone to high volume, resulting in The lower safety performance of PIM devices increases the incidence of circuit failures;

[0004] 2. Based on the low safety performance, the life of the PIM device is short, which is manifested in the thermal fatigue life is easy to fail;

[0005] 3. The difficulty of the process is high, resulting in slow production efficiency and low product qualification rate. The specific performance is that the surface of the device must be free of oxidation, otherwise it will fail due to poor contact. The adjustable range of the ultrasonic welding machine used in the aluminum wire process is narrow, and the bonding depth is too shallow and easy to fall off , if the depth is too deep, it is easy to damage the internal oxide layer, resulting in device failure

Images