A RF Power Amplifier Based on Transformer Matching Network

Abstract

The embodiment of the present invention discloses a radio frequency power amplifier based on a transformer matching network, which includes an input matching network connected in sequence, a first-stage single-channel amplification circuit, a first-stage inter-stage matching network, a second-stage dual-channel amplification circuit, a second An inter-stage matching network, a third-stage four-way amplifier circuit, and an output matching network; the first inter-stage matching network includes a first transformer T1, and the second inter-stage matching network includes two second transformers T2. The output matching network includes two third transformers T3 and one fourth transformer T4; through the use of transformer matching in the inter-stage matching and output matching, the layout area is effectively reduced, and at the same time, no additional insertion loss is brought, and the gain and output The optimization effect of return loss has been significantly improved.

Description

technical field [0001] The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier based on a transformer matching network. Background technique [0002] As an important part of the transmitter, the RF power amplifier is located at the final stage of the transmitter. Its main function is to amplify the RF signal of the previous stage without distortion, and send the amplified signal from the antenna end. According to different application scenarios, power amplifiers need to achieve different output power, linearity, efficiency, etc., and thus ensure that signals can be received safely, effectively, and reliably at an appropriate distance. The existing traditional impedance matching network can be composed of reactance elements with lumped parameters (such as capacitors and inductors), and can also be composed of distributed parameter elements (such as microstrip lines and striplines). A typical matching network topolo...

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Problems solved by technology

The parallel connection of multiple transistors will cause the impedance value of its input and output terminals to be very small, and it will be very difficult to design matching, whether it is "L" type, " "Type or "T" type matching network, both require multiple topological structures to be cascaded or add reactive components to match

However, adding cascaded topological structures or reactive components will not only increase the layout area, but also increase the cost of tape-out; each additional topology or reactive components will also increase the insertion loss of the matching structure, which will affect the overall The gain and output power of the circuit have a great influence

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