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Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application

A heterogeneous epitaxy and molecular beam technology, which is applied in metal material coating process, ion implantation plating, semiconductor/solid-state device manufacturing, etc., can solve the problems that the method is difficult to control and only one layer of epitaxial material can be grown.

Active Publication Date: 2021-11-02
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing a silicon-based molecular beam heteroepitaxy growth material, a memristor and its application, so as to solve the problem that the existing method is difficult to control, and generally only one layer of epitaxial material can be grown

Method used

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  • Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application
  • Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application
  • Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application

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Embodiment 1

[0041] Embodiment 1 epitaxial growth sample

[0042] like figure 1 As shown, the epitaxial sample structure prepared by the method of the present invention includes the bottom substrate 1, the first epitaxial layer 2 on the substrate 1, the second epitaxial layer 3 on the first epitaxial layer 2, and the second epitaxial layer 3 on the third epitaxial layer 4. Substrate 1 is a Si substrate, and the epitaxial layer is the first epitaxial layer SrTiO from bottom to top. 3 layer, the second epitaxial layer La 0.67 Sr 0.33 MnO 3 layer, the third epitaxial layer BaTiO 3 ) 0.5 -(CeO 2 ) 0.5 Floor.

Embodiment 2

[0043] Example 2 Silicon-based Molecular Beam Heteroepitaxial Growth Method

[0044] The preparation method of the present invention comprises the steps:

[0045] Prepare a suitable substrate

[0046] Select P-type Si as the substrate, then put the Si substrate in acetone and ultrasonically clean it for 10 minutes, then put it in alcohol and clean it ultrasonically for 10 minutes, then sandwich it in diluted HF acid solution and soak it for 90 seconds, and finally take it out with wooden clips into deionized water and ultrasonically cleaned for 5 min, and finally taken out and washed with N 2 blow dry.

[0047] ② Put the Si substrate into the cavity of the pulsed laser deposition equipment and vacuumize it

[0048] like figure 2 As shown, open the chamber a of the pulse deposition equipment, take out the tablet press table f, remove surface stains with sandpaper, clean the polished waste and organic matter attached to the surface with acetone, and finally wipe it clean ...

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Abstract

The invention provides a preparation method of a silicon-based molecular beam heteroepitaxial growth material, a memristor and application. According to the structure of the epitaxial growth material, an SrTiO3 layer, an La0.67Sr0.33MnO3 layer and a (BaTiO3)0.5-(CeO2)0.5 layer are sequentially grown on a P-type Si substrate; according to the silicon-based epitaxial growth structure, a first SrTiO3 layer, a second La0.67Sr0.33MnO3 layer and a third (BaTiO3)0.5-(CeO2)0.5 layer with the atomic ratio of BaTiO3 to CeO2 being 0.5: 0.5 are grown in sequence under the conditions of specific temperature and specific oxygen pressure. According to the silicon-based molecular beam heteroepitaxial growth method, a laser pulse deposition method is used, the method is simple and easy to control, the thickness of the first SrTiO3 buffer layer can reach 40 nm, and the memristor function and the nerve-imitating characteristic are achieved.

Description

technical field [0001] The invention relates to the technical field of preparation methods of epitaxial growth materials, in particular to a preparation method of a silicon-based molecular beam heterogeneous epitaxial growth material, a memristor and its application. Background technique [0002] Under the background of today's information age, the electronic information industry is developing rapidly, and electronic components such as capacitors, diodes, triodes, and CMOS tubes have become the basic pillars of the electronic information industry. With the continuous development of human scientific research, electronic components are constantly being updated, which has greatly promoted the development of the electronic information industry and improved all aspects of people's lives. [0003] Pulse deposition technology, a new type of epitaxial growth process, shows characteristics different from previous preparation methods in scientific research and production preparation, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C14/08C23C14/28C23C14/54
CPCH01L21/02381H01L21/02483H01L21/02631H01L21/02565C23C14/28C23C14/088C23C14/08C23C14/548C23C14/0021H10N70/026H10N70/8836H10N70/20H10N70/826H10N70/841Y02P70/50
Inventor 闫小兵贺海东赵桢
Owner HEBEI UNIVERSITY