Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor substrate, an N-type well region arranged in the semiconductor substrate, and a P-type well region arranged in the surface, deviating from the semiconductor substrate, of the N-type well region; a plurality of device modules are arranged on one side, deviating from the N-type well region, of the P-type well region, and each device module comprises at least one MOS unit; a deep trench isolation structure is arranged between the adjacent device modules; if a plurality of MOS units exist in the same device module, a shallow trench isolation structure is arranged between the adjacent MOS units; the bottom of each deep trench isolation structure is located in the N-type well region, and the bottom of each shallow trench isolation structure is located in the P-type well region. By arranging the double-trench isolation structures, the design elasticity can be increased while the area of the regions is reduced, the circuit design is more flexible, the cost can be reduced, the device performance can be improved, and the power consumption can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor integration, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing toward higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, it is easy to produce short channel effect, cause current leakage, and finally affect the electrical performance of semiconductor devices. Contents of the invention [0003] In view of this, the present invention provides a semiconductor device and a manufacturing method thereof. By setting a...

AI Technical Summary

Problems solved by technology

As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, it is easy to produce short channel effect, cause current leakage, and finally affect the electrical performance of semiconductor devices

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