Preparation method of MgB2 superconducting microbridge
A micro-bridge and superconducting technology, which is applied in the field of preparation of MgB2 superconducting micro-bridges, can solve the problems of destroying the superconducting properties of thin-film micro-bridges, micro-bridge quenching, and affecting the performance of HEB devices.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0029] The invention provides a MgB 2 A method for preparing a superconducting microbridge, comprising the following steps:
[0030] A microbridge structure is prepared by direct writing on a bare substrate using a focused ion beam; the size of the microbridge structure is comparable to that of MgB 2 The dimensions of the superconducting microbridges are the same;
[0031] Depositing MgB on the surface of the microbridge structure using a mixture of physical and chemical vapor deposition 2 superconducting thin film, forming MgB 2 superconducting microbridge.
[0032] The invention adopts the focused ion beam to write directly on the bare substrate to prepare the micro bridge structure.
[0033] Before preparing the micro-bridge structure, the present invention preferably designs the structure and size of the micro-bridge according to actual requirements, and then uses focused ion beams to process on the bare substrate. The present invention preferably designs the microbri...
Embodiment 1
[0045] (1) The size of the microbridge is designed to be 0.5μm×1μm, that is, the length of the microbridge is 1μm and the width is 0.5μm;
[0046] (2) Put the clean 5*5mm 2 Put the SiC substrate into the FIB / SEM dual-beam system, set the ion beam accelerating voltage to 30kV, and the beam current to 70pA. After focusing, etch a microbridge of 0.5μm×1μm on the SiC substrate;
[0047] (3) Open the reaction chamber, place 6 cut Mg blocks (each with a mass of about 2 to 4 g and a purity of not less than 99.99%) evenly on the sample stage, and etch a microbridge in step (2) The SiC substrate is placed in the center of the sample stage;
[0048] (4) Close the reaction chamber, turn on the mechanical pump to extract the vacuum of the reaction chamber, and when the vacuum is less than 7Pa, H 2 ;
[0049] (5) When the degree of vacuum (or background pressure) becomes about 4.17kPa, heat the sample stage;
[0050] (6) When the temperature reaches 665°C, feed diborane with a flow ra...
Embodiment 2
[0054] (1) The size of the microbridge is designed to be 0.5μm×2μm, that is, the length of the microbridge is 2μm and the width is 0.5μm;
[0055] (2) Put the clean 5*5mm 2 Put the SiC substrate into the FIB / SEM dual-beam system, set the ion beam accelerating voltage to 30kV, and the beam current to 150pA, and etch a microbridge of 0.5μm×2μm on the SiC substrate after focusing;
[0056] (3) Open the reaction chamber, place 6 cut Mg blocks (each with a mass of about 2 to 4 g, and a purity of not less than 99.99%) evenly on the sample stage, and etch a microbridge in step (2) The SiC substrate is placed in the center of the sample stage;
[0057] (4) Close the reaction chamber, turn on the mechanical pump to extract the vacuum of the reaction chamber, and when the vacuum is less than 7Pa, H 2 ;
[0058] (5) When the degree of vacuum (or background pressure) becomes 4.17kPa, heat the sample stage;
[0059] (6) When the temperature reaches 640°C, feed diborane with a flow rat...
PUM
| Property | Measurement | Unit |
|---|---|---|
| size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More