Lifting temperature control mechanism for vapor phase epitaxy reaction cavity structure

Abstract

The invention relates to the related technical field of GaN preparation, and discloses a lifting temperature control mechanism for a vapor phase epitaxy reaction cavity structure. The lifting temperature control mechanism comprises a supporting base plate, a driving mechanism and a deposition base, wherein the output end of the driving mechanism is connected with an input shaft of the deposition base, a positioning bearing seat and a servo motor are arranged below the supporting base, the positioning bearing seat and the servo motor are both installed on the equipment base, an adjusting lead screw is installed on a bearing inner ring of the positioning bearing seat, a ball nut is connected to the adjusting lead screw in a threaded mode, vertical extending rods are installed on the ball nut in an annular array mode, and the tail ends of the vertical extending rods are connected with the bottom surface of the supporting base. The lifting temperature control mechanism for the vapor phase epitaxy reaction cavity structure is different from a traditional deposition base structure, and the horizontal position height of the deposition base can be slowly adjusted according to the growth speed of GaN crystals, so that deposition growth of the GaN crystals in a constant-temperature environment is guaranteed, and the growth quality of the GaN crystals is improved.

Description

technical field [0001] The invention relates to the technical field related to GaN preparation, in particular to a rising and falling temperature control mechanism for a vapor phase epitaxy reaction chamber structure. Background technique [0002] GaN is a typical representative of the third-generation wide-bandgap semiconductors. It has been widely used in semiconductor lighting, microwave power devices, and power electronic devices, showing great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material. Such homoepitaxial (that is, the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film and reduce the dislocation density. , Improve the working life of the device, improve the luminous efficiency, and increase the working current density of the device. [0003] The growth methods of GaN semiconductor materials mainly include metal organic...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a rise and fall temperature control mechanism for the vapor phase epitaxy reaction chamber structure, which solves the problem that the temperature change affects the growth quality of the GaN crystal when its thickness increases during deposition and growth

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