Graphene high-sensitivity temperature sensor

A temperature sensor and graphene technology, applied in the field of temperature sensing, can solve the problems of low detection sensitivity and cannot meet the needs of high-sensitivity temperature detection, and achieve the effect of high temperature detection sensitivity

Inactive Publication Date: 2021-11-19
于孟今
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the detection sensitivity of common thermistor temperature sensors or optical fiber temperature sensors is low, which cannot meet the needs of high-sensitivity temperature detection in special fields such as superconducting research.

Method used

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Embodiment 1

[0020] The invention provides a graphene highly sensitive temperature sensor, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a graphene layer 4 , and a free layer 5 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The material of the barrier layer 3 is aluminum oxide or magnesium oxide. A graphene layer 4 is placed on the barrier layer 3 . That is to say, the graphene layer 4 is laid on the barrier layer 3, and the specific laying method is chemical vapor deposition. Because the graphene layer...

Embodiment 2

[0024] On the basis of Example 1, such as figure 2 As shown, on the top of the barrier layer 3, the graphene layer 4 is provided with a hole 6, the shape of the hole 6 is circular, square, rectangular or rhombus, the hole 6 is periodically arranged, and the period of the hole 6 arrangement is a square period or rectangular cycle. In this way, the graphene layer 4 can transfer heat from the environment to the barrier layer 3, but, due to the small contact area, less heat is transferred to the barrier layer 3, and the quantum tunneling properties of the barrier layer 3 change less . Therefore, this embodiment is suitable for measuring temperature in a higher temperature environment.

[0025] Furthermore, the size of the hole is less than 100 nanometers, so that the temperature in the barrier layer 3 changes less, thereby changing the quantum tunneling characteristics of the barrier layer 3 less, so that this embodiment can operate at a higher temperature environment applicat...

Embodiment 3

[0027] On the basis of Example 2, the number of graphene layers in the graphene layer 4 is less than 6 layers. Furthermore, on the barrier layer 3, the number of layers of graphene in the graphene layer 4 is less than 2 layers, so that more electrons can quantum tunnel from the composite layer of the barrier layer 3 / graphene layer 4 Pass. Since graphene is a good heat conductor, the two-layer graphene layer 4 can also achieve good heat conduction effect. In this way, when the ambient temperature changes, the number of electrons passing through the quantum tunneling of the barrier layer 3 / graphene layer 4 composite layer changes more, thereby changing the magnetoresistance of the magnetic tunnel junction more, thereby improving the temperature detection. sensitivity.

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Abstract

The invention relates to the field of temperature sensing, and particularly provides a graphene high-sensitivity temperature sensor. A pinning layer is arranged on an antiferromagnetic layer, the pinning layer is made of metal or semimetal with high spin polarizability, a barrier layer is arranged on the pinning layer, a graphene layer is arranged on the barrier layer, a free layer is arranged on the graphene layer, the free layer is made of a soft magnetic material with weak magnetic anisotropy, the graphene layer extends out of the barrier layer and the free layer, and absorbs heat from the environment. In the invention, the pinning layer, the barrier layer/graphene layer and the free layer form a magnetic tunnel junction. During application, a magnetic field acts on the sensor; meanwhile, the sensor is placed in a to-be-tested environment. The temperature of the environment to be tested is determined by measuring the difference of the magnetoresistance of the magnetic tunnel junction when the sensor is placed in the environment to be tested and at normal temperature. According to the invention, the quantum tunneling characteristic of the magnetic tunnel junction is utilized, and the temperature detection sensitivity is high.

Description

technical field [0001] The invention relates to the field of temperature sensing, in particular to a graphene high-sensitivity temperature sensor. Background technique [0002] The temperature sensor is used to measure the temperature information of a given space, and convert the temperature information into a characteristic signal. Currently commonly used temperature sensors are thermistor temperature sensors and optical fiber temperature sensors. The current common thermistor temperature sensors or fiber optic temperature sensors have low detection sensitivity, which cannot meet the needs of high-sensitivity temperature detection in special fields such as superconductivity research. Contents of the invention [0003] In order to solve the above problems, the invention provides a graphene highly sensitive temperature sensor, comprising an antiferromagnetic layer, a pinned layer, a barrier layer, a graphene layer, a free layer, and the material of the antiferromagnetic la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/36
Inventor 于孟今
Owner 于孟今
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