32results about How to "High temperature detection sensitivity" patented technology

An optical fiber temperature sensor based on a diamond NV color center comprises an optical fiber, a microwave transmission antenna and diamond containing the NV color center, and the optical fiber isused for transmitting exciting light and collecting fluorescence emitted by the NV color center; the microwave transmission antenna is a copper wire surrounding the optical fiber ceramic ferrule andis used for transmitting microwaves to control the ground state energy level of the NV color center so as to perform optical detection magnetic resonance; the diamond containing the NV color center islocated on the end face of the optical fiber, temperature changes can cause changes of the ground state energy level of the NV color center, and then the diamond is used for temperature sensing. Thesensor is simple in structure and high in practicability, high temperature detection sensitivity can be achieved, the sensor is not affected by magnetic field noise and microwave jitter in the environment during detection, and high robustness is reflected. Diamond is used as a main sensing part and has a very high heat conduction coefficient, so that the temperature sensor can respond to millisecond-order temperature change.

On an element substrate having a multilayered structure in which a temperature detection element is provided in an intermediate layer of a wiring layer and a print element layer, a wiring layer and a temperature detection element formed on the first interlayer insulation film are connected by a first conductive plug which penetrates through the first interlayer insulation film. In addition, a wiring layer and a print element which are formed on the second interlayer insulation film formed on the first interlayer insulation film are connected by a second conductive plug which penetrates through the first and second interlayer insulation films. By manufacturing the element substrate by this arrangement, the thickness of an interlayer insulation film between a print element and a temperature detection element can be made thin, and the sensitivity of the temperature detection element can be improved.

The invention discloses an anti-resonance optical fiber temperature detector which comprises an anti-resonance optical fiber. One end of the anti-resonance optical fiber is connected with a beam expanding optical fiber, and the other end of the anti-resonance optical fiber is connected with a coupling optical fiber; one end of the beam expanding optical fiber is connected with the anti-resonance optical fiber, and the other end is connected with an uplink transmission optical fiber; one end of the uplink transmission optical fiber is connected with the beam expanding optical fiber, and the other end of the uplink transmission optical fiber is connected with an optical fiber light source; one end of the coupling optical fiber is connected with the anti-resonance optical fiber, and the otherend is connected with a downlink transmission optical fiber; and one end of the downlink transmission optical fiber is connected with the coupling optical fiber, and the other end is connected with an optical fiber spectrometer. Due to a fact that a silicon dioxide material is sensitive to a temperature, the temperature influences an optical path difference of the coherent light beams, and interference fringes read out by the optical fiber spectrometer change along with the temperature change of the anti-resonance optical fiber. By monitoring the movement of the fringes, the high-precision temperature monitoring of the anti-resonance optical fiber can be realized. Benefited from optimized device parameters and relatively high interference series, an anti-resonance optical fiber temperature detector has relatively high temperature detection sensitivity.

The invention provides a temperature detection circuit based on integral calculation. The temperature detection circuit comprises four temperature sensor input units, a gating module, a signal amplifying module of which the input end is connected with the output end of the gating module and is used for amplifying a detection voltage signal output by the gating module to obtain an amplified signal,an integration module which is connected to the output end of the signal amplifying module to obtain the amplified signal and performs integral operation on the amplified signal, a voltage comparisonmodule which is connected with the integration module to compare an integral voltage output after the integral operation of the integration module with a preset voltage and outputs a level signal according to a comparison result and a central processing module which is connected with the voltage comparison module, wherein the central processing module is connected to the control terminal of a first gating chip to control an integral unit to switch between an integration phase and a discharge phase through a first gating unit, and is used for calculating and obtaining a temperature value according to the duration of a preset level in the level signal output by the voltage comparison module.

The invention relates to the field of temperature sensing, and particularly provides a graphene high-sensitivity temperature sensor. A pinning layer is arranged on an antiferromagnetic layer, the pinning layer is made of metal or semimetal with high spin polarizability, a barrier layer is arranged on the pinning layer, a graphene layer is arranged on the barrier layer, a free layer is arranged on the graphene layer, the free layer is made of a soft magnetic material with weak magnetic anisotropy, the graphene layer extends out of the barrier layer and the free layer, and absorbs heat from the environment. In the invention, the pinning layer, the barrier layer/graphene layer and the free layer form a magnetic tunnel junction. During application, a magnetic field acts on the sensor; meanwhile, the sensor is placed in a to-be-tested environment. The temperature of the environment to be tested is determined by measuring the difference of the magnetoresistance of the magnetic tunnel junction when the sensor is placed in the environment to be tested and at normal temperature. According to the invention, the quantum tunneling characteristic of the magnetic tunnel junction is utilized, and the temperature detection sensitivity is high.

The invention relates to a temperature detection method, particularly to a temperature detection method based on an up-conversion luminescence intensity ratio of a rare earth Er ion four-level system.The method is characterized in that infrared up-conversion luminescence of transition from rare earth Er<3+> ion thermal coupling levels <2>H11/2 and <4>S3/2 to a <4>I13/2 level and green up-conversion luminescence of transition from the rare earth Er<3+> ion thermal coupling levels <2>H11/2 and <4>S3/2 to a ground <4>I15/2 level are adopted, and a fluorescence intensity, which is obtained through the novel temperature detection method based on the fluorescence intensity ratio of the rare earth Er<3+> ion four-level system, is achieved through a quantitative relation between the ratio of an infrared up-conversion luminescence intensity to green up-conversion luminescence intensities and the temperature. The method has the characteristics of high precision and high temperature sensing sensitivity.

The invention belongs to the technical field of temperature detection, and discloses a temperature detection method based on the excitation intensity ratio of rare earth Dy < 3 + > ions. Comprising the following steps: measuring excitation light peak intensity corresponding to two emission wavelengths A and B of the Dy < 3 + >-doped CaWO4 fluorescent powder at a certain temperature, calculating the ratio of the excitation light intensity sum at the temperature, changing the temperature of the Dy < 3 + >-doped CaWO4 fluorescent powder, repeating the steps, and fitting a curve obtained in the step S3 by adopting a formula to obtain the Dy < 3 + >-doped CaWO4 fluorescent powder. The novel temperature measurement method based on the rare earth Dy < 3 + > ion excitation intensity ratio technology is realized by adopting excitation peak intensity corresponding to two different emission wavelengths of the rare earth Dy < 3 + > ions and through the quantitative relation between the intensity ratio of the two excitation peak intensity and the temperature, and the novel temperature measurement method based on the rare earth Dy < 3 + > ion excitation intensity ratio technology is realized through the temperature measurement technology based on the rare earth Dy < 3 + > ion excitation intensity ratio. The material has good cycling stability, repeatability and high temperature detection sensitivity.

Provided is a cable-type detector. The cable-type detector is characterized in that according to the structure of a temperature sensing cable, a meltable NTC characteristic material layer is axially arranged outside a first elastic metal conductor serving as a cable core, the meltable NTC characteristic material layer is wound with a second elastic metal conductor, and then the formed structure is coated with an extrusion molding outer sheath layer; the two ends of the first elastic metal conductor and the two ends of the second elastic metal conductor are connected with a signal processing device and a terminal resistor R respectively, and a closed-circuit signal collection circuit is formed. The other structure is characterized in that after the first elastic metal conductor is coated with the meltable NTC characteristic material layer, the meltable NTC characteristic material layer is wound with the second conductor and wound with a metal conducting layer simultaneously, and then the formed structure is coated with the outer sheath layer through extrusion molding. The signal processing device detects changes of resistance between the two conductors in real time; if the resistance decreases and a short circuit occurs, a constant temperature alarm signal is sent out; if the resistance does not decrease, but the short circuit occurs, a short-circuit fault alarm signal is output. The structure is simple, the cost is low, the sensitivity of temperature sensing detection is high, the function of distinguishing a short-circuit fault, not caused by fire, of the detection conductors can be achieved, and the electrical signal processing device can output alarm signals with multiple states.

The invention provides a temperature detection circuit, which comprises at least two temperature sensor input units, a gating module, a signal amplification module, an integration module, a voltage comparison module and a central processing module. The gating module is connected with the at least two temperature sensor input units respectively, so as to output a detection voltage signal of one temperature sensor input unit in the at least two temperature sensor input units; an input end of the signal amplification module is connected with an output end of the gating module, and is used for amplifying the detection voltage signal output by means of the gating module; the integration module is connected with an output end of the signal amplification module so as to acquire an amplification signal output by the signal amplification module, and performing integral operation on the amplification signal; the voltage comparison module is connected with the integration module so as to comparean integral voltage output after calculating integral of the integration module, and outputting a level signal according to the comparison result; and the central processing module is connected with the voltage comparison module, and is used for calculating to obtain a temperature value detected by the corresponding temperature sensor according to the level signal output by the voltage comparisonmodule.