32results about How to "High temperature detection sensitivity" patented technology

An optical fiber temperature sensor based on a diamond NV color center comprises an optical fiber, a microwave transmission antenna and diamond containing the NV color center, and the optical fiber isused for transmitting exciting light and collecting fluorescence emitted by the NV color center; the microwave transmission antenna is a copper wire surrounding the optical fiber ceramic ferrule andis used for transmitting microwaves to control the ground state energy level of the NV color center so as to perform optical detection magnetic resonance; the diamond containing the NV color center islocated on the end face of the optical fiber, temperature changes can cause changes of the ground state energy level of the NV color center, and then the diamond is used for temperature sensing. Thesensor is simple in structure and high in practicability, high temperature detection sensitivity can be achieved, the sensor is not affected by magnetic field noise and microwave jitter in the environment during detection, and high robustness is reflected. Diamond is used as a main sensing part and has a very high heat conduction coefficient, so that the temperature sensor can respond to millisecond-order temperature change.

The invention discloses a rare earth-doped tungsten bronze fluorescence temperature detection material with high sensitivity and a preparation method thereof. The rare earth-doped tungsten bronze material has a chemical formula as Ba4Gd[0.65-x]Er0.02YbxNb10O30, wherein x is equal to 0,0.02,0.05,0.1. The Ba4Gd[0.65-x]Er0.02YbxNb10O30 material is prepared by adopting a traditional high temperature solid state reaction method, so that the material is simple in process, low in cost, good in repeatability, and convenient for batch production. Compared with former up-conversion temperature detection materials, the Ba4Gd[0.65-x]Er0.02YbxNb10O30 material is the fluorescence intensity ratio type temperature detection material with high sensitivity, and has the maximum temperature detection sensitivity at 573K being 0.013K<-1>. The research shows that rare earth Yb ion doping can be beneficial to effectively improving a temperature detection performance of the Ba4Gd[0.65-x]Er0.02YbxNb10O30 material. In addition, the Ba4Gd[0.65-x]Er0.02YbxNb10O30 material prepared by the invention has stable physical and chemical properties, does not contain metal elements unfriendly to the environment, is the green and environment-friendly temperature detection material, and has a wide industrial application prospect.

The invention discloses a method for monitoring a composite material engineering temperature. The method comprises the following steps: i, manufacturing a temperature sensor original (2) via the way of embedding four stainless steel network electrodes; ii, mounting an L-shaped deployable concrete structure (3) outside the manufactured temperature sensor original (2); iii, inserting the L-shaped deployable concrete structure (3) of the temperature sensor original (2) into the part of a large volume concrete structure (1) needing measuring the temperature; iv, exciting the sensor original (2) by a constant voltage source (5); v, using a high temperature resistent wire (4) of the temperature sensor original (2) to transmit the voltage and electric current to a signal amplifier (6); vi, using a data acquisition card (7) of a computer (8) to amplify voltage and electric current signals; and vii, obtaining the temperature value of the part to be measured by a mathematical operation and calibration temperature-resistance conversion formula. With the adoption of the method for monitoring the composite material engineering temperature, the temperature detection sensitivity of carbon fiber cement based composite material temperature sensor can be improved.

The invention provides an IGBT chip and a preparation method thereof. The IGBT chip comprises a terminal protection area and a cellular area, wherein the cellular area comprises an IGBT cell and a temperature sensing area, the temperature sensing area comprises a first conductive type substrate, a field oxide layer located above the substrate, a first polycrystalline silicon layer and a second polycrystalline silicon layer which are arranged side by side above the field oxide layer, and a first electrode, a second electrode and a third electrode which are located above the first polycrystalline silicon layer and the second polycrystalline silicon layer and are isolated from each other, wherein the first polycrystalline silicon layer is used for forming a positive temperature coefficient thermistor, and the second polycrystalline silicon layer is used for forming a negative temperature coefficient thermistor. According to the IGBT chip, a positive temperature coefficient thermistor (PTC) and a negative temperature coefficient thermistor (NTC) are integrated in an IGBT cellular area, and the NTC and the PTC resistor are connected in series to amplify an electrical signal generated by temperature change, so that the temperature detection sensitivity is improved so as to further improve the performance and the reliability of the IGBT chip.

A semiconductor device 10 according to the present invention includes a temperature detection section 12 that performs temperature detection with a semiconductor device formed in a semiconductor substrate; a sensor output terminal T3; a current generating part 21 connected to the output terminal T3, which applies a driving current to the temperature detecting part 12; and a voltage measuring device 22 connected to the output terminal 22, when the driving current of a predetermined value is When the current generating part 21 is supplied to the temperature detecting part 12, the voltage measuring means 22 measures the voltage of the output terminal T3 to perform temperature detection. A semiconductor device according to the present invention has a structure that contributes to its size reduction. The semiconductor device according to the present invention contributes to its easy production at low production cost. The temperature detection method according to the invention contributes to very precise operation of the semiconductor device.

The invention discloses an anti-resonance optical fiber temperature detector which comprises an anti-resonance optical fiber. One end of the anti-resonance optical fiber is connected with a beam expanding optical fiber, and the other end of the anti-resonance optical fiber is connected with a coupling optical fiber; one end of the beam expanding optical fiber is connected with the anti-resonance optical fiber, and the other end is connected with an uplink transmission optical fiber; one end of the uplink transmission optical fiber is connected with the beam expanding optical fiber, and the other end of the uplink transmission optical fiber is connected with an optical fiber light source; one end of the coupling optical fiber is connected with the anti-resonance optical fiber, and the otherend is connected with a downlink transmission optical fiber; and one end of the downlink transmission optical fiber is connected with the coupling optical fiber, and the other end is connected with an optical fiber spectrometer. Due to a fact that a silicon dioxide material is sensitive to a temperature, the temperature influences an optical path difference of the coherent light beams, and interference fringes read out by the optical fiber spectrometer change along with the temperature change of the anti-resonance optical fiber. By monitoring the movement of the fringes, the high-precision temperature monitoring of the anti-resonance optical fiber can be realized. Benefited from optimized device parameters and relatively high interference series, an anti-resonance optical fiber temperature detector has relatively high temperature detection sensitivity.

The invention relates to the technical field of terahertz imaging, particularly relates to a technology for imaging close-range terahertz waves by using an off-axis three-mirror optical lens, and particularly provides a close-range off-axis three-mirror collimation system. The system comprises a scanning swing mirror, a first reflector, a secondary mirror, a third mirror and an array detection antenna, the curvature radius of the scanning swing mirror is infinitely great, the first reflector has a first curvature radius in the sagittal direction, the secondary mirror has a second curvature radius in the meridian direction, and the third mirror is a spherical reflector with a third curvature radius. According to the invention, image splicing can be carried out, small-F-number, large-aperture and high-resolution imaging is realized, a short-distance 1.5-meter object distance is provided, the linear resolution in the sagittal direction can reach up to 10mm, and the temperature detection sensitivity is greatly improved; and the system is suitable for meridian plane and sagittal plane two-dimensional scanning, magnification control is carried out on two different dimensions of an objectplane, an image plane antenna is matched, and collection and detection of light waves of different dimensions are achieved.

The invention provides a piezoelectric film body wave resonator temperature sensor. A first thermal expansion part and a second thermal expansion part are arranged at the two ends of a piezoelectric body. During application, the first thermal expansion part and the second thermal expansion part are heated to expand to change the internal stress of the piezoelectric body, so that the resonant frequency of body waves in the piezoelectric body is changed, and temperature detection is realized by detecting the resonant frequency. Since the resonant frequency of the sound wave in the piezoelectricbody is very sensitive to the stress in the piezoelectric body, the temperature sensor has the advantage of high temperature detection sensitivity, and has a good application prospect in the field oftemperature sensing.

The invention provides a temperature detection circuit based on integral calculation. The temperature detection circuit comprises four temperature sensor input units, a gating module, a signal amplifying module of which the input end is connected with the output end of the gating module and is used for amplifying a detection voltage signal output by the gating module to obtain an amplified signal,an integration module which is connected to the output end of the signal amplifying module to obtain the amplified signal and performs integral operation on the amplified signal, a voltage comparisonmodule which is connected with the integration module to compare an integral voltage output after the integral operation of the integration module with a preset voltage and outputs a level signal according to a comparison result and a central processing module which is connected with the voltage comparison module, wherein the central processing module is connected to the control terminal of a first gating chip to control an integral unit to switch between an integration phase and a discharge phase through a first gating unit, and is used for calculating and obtaining a temperature value according to the duration of a preset level in the level signal output by the voltage comparison module.

The invention provides a temperature detection circuit, which comprises at least two temperature sensor input units; gating modules, which are respectively connected to the at least two temperature sensor input units to respectively output the detection voltage signal of one of the at least two temperature sensor input units; a signal amplifier module for amplifying the detection voltage signal output by the gating module to obtain an amplified signal; an integral module for acquiring the amplified signal output by the signal amplifier module and performing an integral operation on the amplified signal; a voltage comparison module, which compares the integrated voltage output after the integration operation of the integral module with a preset voltage, and outputs a level signal accordingto the comparison result; a detection module for detecting the actual voltage information of a power supply module; and a central processing module for calculating the temperature value detected by the corresponding temperature sensor according to the level signal output by the voltage comparison module.

The invention provides a high-sensitivity temperature detection device based on a cantilever beam. The high-sensitivity temperature detection device comprises a vibration source, the cantilever beam,a piezoelectric material block and a thermal expansion material part. The cantilever beam is fixed on the vibration source, the piezoelectric material block is arranged on a position, close to a fixedend, of a top surface of the cantilever beam, the piezoelectric material block is connected with an external circuit, and the thermal expansion material part is arranged in the cantilever beam. During application, in a to-be-measured environment, the thermal expansion material part absorbs heat and expands so that the stress and distribution of the cantilever beam are changed, a resonant frequency of the cantilever beam is changed, and the to-be-measured temperature is measured by detecting the change of the resonant frequency of the cantilever beam. The device has the advantage of high temperature detection sensitivity, and has a good application prospect in the field of high-sensitivity temperature detection.

The invention relates to the field of temperature sensing, and particularly provides a graphene high-sensitivity temperature sensor. A pinning layer is arranged on an antiferromagnetic layer, the pinning layer is made of metal or semimetal with high spin polarizability, a barrier layer is arranged on the pinning layer, a graphene layer is arranged on the barrier layer, a free layer is arranged on the graphene layer, the free layer is made of a soft magnetic material with weak magnetic anisotropy, the graphene layer extends out of the barrier layer and the free layer, and absorbs heat from the environment. In the invention, the pinning layer, the barrier layer / graphene layer and the free layer form a magnetic tunnel junction. During application, a magnetic field acts on the sensor; meanwhile, the sensor is placed in a to-be-tested environment. The temperature of the environment to be tested is determined by measuring the difference of the magnetoresistance of the magnetic tunnel junction when the sensor is placed in the environment to be tested and at normal temperature. According to the invention, the quantum tunneling characteristic of the magnetic tunnel junction is utilized, and the temperature detection sensitivity is high.

The invention relates to a temperature detection method, particularly to a temperature detection method based on an up-conversion luminescence intensity ratio of a rare earth Er ion four-level system.The method is characterized in that infrared up-conversion luminescence of transition from rare earth Er<3+> ion thermal coupling levels <2>H11 / 2 and <4>S3 / 2 to a <4>I13 / 2 level and green up-conversion luminescence of transition from the rare earth Er<3+> ion thermal coupling levels <2>H11 / 2 and <4>S3 / 2 to a ground <4>I15 / 2 level are adopted, and a fluorescence intensity, which is obtained through the novel temperature detection method based on the fluorescence intensity ratio of the rare earth Er<3+> ion four-level system, is achieved through a quantitative relation between the ratio of an infrared up-conversion luminescence intensity to green up-conversion luminescence intensities and the temperature. The method has the characteristics of high precision and high temperature sensing sensitivity.

The invention belongs to the technical field of temperature detection, and discloses a temperature detection method based on the excitation intensity ratio of rare earth Dy < 3 + > ions. Comprising the following steps: measuring excitation light peak intensity corresponding to two emission wavelengths A and B of the Dy < 3 + >-doped CaWO4 fluorescent powder at a certain temperature, calculating the ratio of the excitation light intensity sum at the temperature, changing the temperature of the Dy < 3 + >-doped CaWO4 fluorescent powder, repeating the steps, and fitting a curve obtained in the step S3 by adopting a formula to obtain the Dy < 3 + >-doped CaWO4 fluorescent powder. The novel temperature measurement method based on the rare earth Dy < 3 + > ion excitation intensity ratio technology is realized by adopting excitation peak intensity corresponding to two different emission wavelengths of the rare earth Dy < 3 + > ions and through the quantitative relation between the intensity ratio of the two excitation peak intensity and the temperature, and the novel temperature measurement method based on the rare earth Dy < 3 + > ion excitation intensity ratio technology is realized through the temperature measurement technology based on the rare earth Dy < 3 + > ion excitation intensity ratio. The material has good cycling stability, repeatability and high temperature detection sensitivity.

Provided is a cable-type detector. The cable-type detector is characterized in that according to the structure of a temperature sensing cable, a meltable NTC characteristic material layer is axially arranged outside a first elastic metal conductor serving as a cable core, the meltable NTC characteristic material layer is wound with a second elastic metal conductor, and then the formed structure is coated with an extrusion molding outer sheath layer; the two ends of the first elastic metal conductor and the two ends of the second elastic metal conductor are connected with a signal processing device and a terminal resistor R respectively, and a closed-circuit signal collection circuit is formed. The other structure is characterized in that after the first elastic metal conductor is coated with the meltable NTC characteristic material layer, the meltable NTC characteristic material layer is wound with the second conductor and wound with a metal conducting layer simultaneously, and then the formed structure is coated with the outer sheath layer through extrusion molding. The signal processing device detects changes of resistance between the two conductors in real time; if the resistance decreases and a short circuit occurs, a constant temperature alarm signal is sent out; if the resistance does not decrease, but the short circuit occurs, a short-circuit fault alarm signal is output. The structure is simple, the cost is low, the sensitivity of temperature sensing detection is high, the function of distinguishing a short-circuit fault, not caused by fire, of the detection conductors can be achieved, and the electrical signal processing device can output alarm signals with multiple states.

The invention provides a device for detecting temperatures. The device comprises a temperature sensor input unit, a voltage amplification module, an integration module, a voltage comparison module, and a central processing module. The voltage amplification module is connected with the temperature sensor input unit by an input end, and is used for amplifying a detection voltage signal of the temperature sensor input unit to obtain an amplification signal. The integration module is connected with an output end of the voltage amplification module to obtain the amplification voltage output by thevoltage amplification module, and performs integration operation on the amplification signal. The voltage comparison module is connected with the integration module to compare an integration voltage outputted after the integration operation by the integration module with a preset voltage, and outputs a comparison result signal according to a comparison result. The central processing module is connected with the voltage comparison module, and is used for calculating a temperature value detected by a corresponding thermocouple according to the comparison result signal.

The invention discloses a temperature monitoring alarm device for automatic chemical control, comprising a casing, a display, an alarm lamp, an alarm sounder, a temperature sensor, a data line and a heat sink, wherein the casing is provided with the display, function buttons are disposed on one side of the display, a switch button is disposed under the function buttons, the alarm sounder is disposed on one side of the switch button, support legs are disposed under the casing, the alarm lamp is disposed above the casing, the heat sink is disposed behind the casing, the data line is disposed atone end of the heat sink, the temperature sensor is disposed in one end of the data line, a central processor is disposed inside the casing, and an alarm processing module is provided on one side of the central processor. The temperature monitoring alarm device is simple in structure and high in temperature detection sensitivity, and can promptly send an alarm signal to remind the staff to reducethe occurrence of accidents.

The invention provides a temperature detection circuit, which comprises at least two temperature sensor input units, a gating module, a signal amplification module, an integration module, a voltage comparison module and a central processing module. The gating module is connected with the at least two temperature sensor input units respectively, so as to output a detection voltage signal of one temperature sensor input unit in the at least two temperature sensor input units; an input end of the signal amplification module is connected with an output end of the gating module, and is used for amplifying the detection voltage signal output by means of the gating module; the integration module is connected with an output end of the signal amplification module so as to acquire an amplification signal output by the signal amplification module, and performing integral operation on the amplification signal; the voltage comparison module is connected with the integration module so as to comparean integral voltage output after calculating integral of the integration module, and outputting a level signal according to the comparison result; and the central processing module is connected with the voltage comparison module, and is used for calculating to obtain a temperature value detected by the corresponding temperature sensor according to the level signal output by the voltage comparisonmodule.

The invention relates to the technical field of temperature measurement, in particular to an optical fiber temperature sensor which comprises a light source, a light detector, a circulator and an optical fiber sensing component, the optical fiber sensing component comprises an optical fiber and a thermal expansion material, one end of the optical fiber sensing component is connected with the light source and the light detector through the circulator, and at the other end of the optical fiber sensing component, a fiber core protrudes out of a wrapping layer. A gap is formed in the fiber core, the fiber core is divided into a first extension part and a second extension part by the gap, and the gap is filled with a thermal expansion material. During application, the device is placed in a to-be-tested environment; light emitted by the light source is transmitted to the composite structure formed by the first extension part, the second extension part and the thermal expansion material along the optical fiber; and temperature detection is realized through the change of the reflected light detected by the light detector. The optical fiber temperature sensor has the advantages of high temperature detection sensitivity, simple process, low cost and the like, and has a good application prospect in the field of optical fiber temperature sensing.

The invention relates to a temperature detection method, in particular to a temperature detection method based on the up-conversion luminous intensity ratio of a rare earth Er ion four-level system. The present invention uses rare earth Er 3+ ion thermal coupling energy levels 2 h 11 / 2 and 4 S 3 / 2 Towards 4 I 13 / 2 Infrared upconversion luminescence of energy level transitions and transition to the ground state 4 I 15 / 2 The green up-conversion luminescence of energy level transition, through the quantitative relationship between the luminous intensity ratio and temperature, realizes a rare earth-based Er 3+ The fluorescence intensity of the ion four-level system is higher than that obtained by a new method of temperature measurement, which is characterized by high precision and high temperature sensing sensitivity.

The invention provides a high-sensitivity phosphor powder material for temperature sensing. The high-sensitivity phosphor powder material has a molecular formula of Y4.67(1-x-y)Yb4.67xHo4.67ySi3O13, wherein 9%<=x<=11%, and 0.9%<=y<=1.2%; in addition, the invention also provides a preparation method of the high-sensitivity phosphor powder material for temperature sensing, and the preparation methodcomprises the following steps: (1), weighing initial raw materials of Y2O3, SiO2, Yb2O3 and Ho2O3 and a fusing assistant Li2CO3 in an agate crucible accurately, adding anhydrous ethanol, performing grinding, and performing even mixing; and (2), placing the ground mixture in an alundum crucible of 5 ml, performing calcination in a heating furnace, taking the crucible out after completion of calcination and cooling of the heating furnace are conducted, and performing grinding to obtain the powdery product which is the phosphor powder material.