Optical fiber integrated magnetic tunnel junction photoelectric detector

A technology of photodetector and magnetic tunnel junction, which is applied in the field of photoelectric detection, can solve the problems of low photodetection sensitivity, little influence of conductive characteristics, and inability to meet high technology, and achieve high sensitivity

Inactive Publication Date: 2022-04-01
于孟今
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In traditional photothermal photodetectors, the heat converted from light has little effect on the conductive properties, resulting in low photodetection sensitivity, which cannot meet the needs of high technology

Method used

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  • Optical fiber integrated magnetic tunnel junction photoelectric detector
  • Optical fiber integrated magnetic tunnel junction photoelectric detector
  • Optical fiber integrated magnetic tunnel junction photoelectric detector

Examples

Experimental program
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Effect test

Embodiment 1

[0024] The invention provides an optical fiber integrated magnetic tunnel junction photodetector, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a free layer 4 , and a fiber core 5 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The material of the barrier layer 3 is aluminum oxide or magnesium oxide. The free layer 4 is placed on the barrier layer 3 . The material of the free layer 4 is soft magnetic material with weak magnetic anisotropy, specifically, the material of the free layer 4 is N...

Embodiment 2

[0027] On the basis of Example 1, such as figure 2 As shown, the side surface of the fiber core 5 is provided with a polishing plane formed by polishing treatment, and the polishing plane is placed on the side of the barrier layer 3 . In this way, the light in the fiber core 5 is more likely to emerge from the polished plane, and the emitted light can change the temperatures of the barrier layer 3 and the free layer 4 more. Further, the polishing plane is parallel to the surface of the barrier layer 3, and the distance between the polishing plane and the barrier layer 3 is less than 100 nanometers, so that the barrier layer 3 is in a stronger light field, so that the barrier layer The temperature of the barrier layer 3 changes more, and the quantum tunneling characteristics of the barrier layer 3 change more, thereby changing the magnetoresistance of the magnetic tunnel junction more, so as to achieve higher sensitivity light detection.

Embodiment 3

[0029] On the basis of Example 2, such as image 3 As shown, noble metal particles 6 are also included, and the noble metal particles 6 are arranged on the polishing plane. In this way, the light in the fiber core 5 is more easily coupled out of the fiber core 5, and localized surface plasmon resonance is formed on the noble metal particle 6, thereby forming a strong electric field near the noble metal particle 6, thereby changing the potential even more. The temperature of the barrier layer 3 changes more the quantum tunneling characteristics of the potential barrier layer 3, thereby changing the magnetoresistance of the magnetic tunnel junction more, thereby realizing more sensitive light intensity detection. The noble metal particle 6 is circular, and the diameter of the noble metal particle 6 is less than 60 nanometers. In this way, the localized surface plasmon resonance wavelength of the noble metal particle 6 is in the visible light band, because the light propagating i...

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Abstract

The invention relates to the technical field of photoelectric detection, in particular to an optical fiber integrated magnetic tunnel junction photoelectric detector, which comprises an antiferromagnetic layer, a pinning layer, a barrier layer, a free layer and a fiber core, and is characterized in that the antiferromagnetic layer is made of a hard magnetic antiferromagnetic material. During application, the fiber core is connected with an external optical fiber and is connected with light to be measured through the external optical fiber, and meanwhile, a magnetic field is applied to act on the optical fiber. In the free layer, light is coupled out from the fiber core and irradiates the barrier layer and the free layer, and the temperature of the barrier layer and the free layer is changed, so that the quantum tunneling characteristic of the barrier layer and the spin state of the free layer are changed, the magnetoresistance of the magnetic tunnel junction is changed, and light detection is realized through the change of the magnetoresistance. The magnetoresistance of the magnetic tunnel junction seriously depends on the quantum tunneling characteristic of the barrier layer and the spin state of the free layer, so that the light intensity detection sensitivity is high.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to an optical fiber integrated magnetic tunnel junction photodetector. Background technique [0002] The principle of a photodetector is to convert light radiation into a change in conductive properties. Photodetectors are widely used in various fields of military and national economy. Photodetectors in the visible or near-infrared band are mainly used for ray measurement, industrial automatic control, photometry, etc.; in the infrared band, they are mainly used in missile control, infrared thermal imaging, infrared remote sensing, etc. [0003] Photodetectors can be divided into two broad categories: photon-based photodetectors and thermal-based photodetectors. [0004] For photon-type photodetectors, due to the limitation of semiconductor materials, the detected wavelength range is limited, that is, the wavelength range is narrow. Photothermal photodetectors hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42
Inventor 于孟今
Owner 于孟今
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