Precious metal wire thermal regulation and control magnetic tunnel junction

A technology of magnetic tunnel junction and noble metal, which is applied in the direction of magnetic field controlled resistors, parts of electromagnetic equipment, and electric/magnetic devices to transmit sensing components, etc. The promotion and application of tunnel junctions and other issues, to achieve the effect of high sensitivity

Inactive Publication Date: 2022-04-12
于孟今
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing technology, the magnetoresistance of the magnetic tunnel junction is not easy to control, and it cannot adapt to the detection of physical quantities in different ranges, which limits the further popularization and application of the magnetic tunnel junction in some physical quantity detection.

Method used

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  • Precious metal wire thermal regulation and control magnetic tunnel junction
  • Precious metal wire thermal regulation and control magnetic tunnel junction

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Experimental program
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Effect test

Embodiment 1

[0020] The invention provides a thermally regulated magnetic tunnel junction of noble metal wires, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a free layer 4 , and a noble metal wire 5 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The material of the barrier layer 3 is aluminum oxide or magnesium oxide. The free layer 4 is placed on the barrier layer 3 . The material of the free layer 4 is soft magnetic material with weak magnetic anisotropy, specifically, the material of the free layer...

Embodiment 2

[0024] On the basis of Embodiment 1, on the barrier layer 3 side, the surface of the noble metal wire 5 is a plane. The plane is parallel to the surface of the barrier layer 3 . The distance between the plane and the surface of the barrier layer 3 is less than 1 micron. In this way, the heat in the noble metal wire 5 can be transferred to the potential barrier layer 3 more, thereby changing the temperature of the potential barrier layer 3, thereby changing the quantum tunneling characteristics of the potential barrier layer 3, thereby realizing a more sensitive magnetic tunnel junction. regulation.

Embodiment 3

[0026] On the basis of Example 2, such as figure 2 As shown, semiconductor particles 6 are also included, and the semiconductor particles 6 are placed on the plane. The size of the semiconductor particles 6 is less than 200 nanometers. That is, noble metal wires 5 are in contact with semiconductor particles 6 . In this way, a Schottky junction is formed between the noble metal wire 5 and the semiconductor particle 6 . When the temperature of the noble metal wire 5 changes, the charge distribution on the surface of the semiconductor particle 6 is changed, thereby changing the local electric field on the surface of the barrier layer 3, thereby changing the probability of electrons passing through the barrier layer 3, thereby changing the magnetic field. The magnetoresistance of the tunnel junction is realized, thereby realizing the magnetoresistance regulation of the magnetic tunnel junction with high sensitivity.

[0027] Furthermore, the shape of the semiconductor particle...

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Abstract

The invention relates to the field of magnetic tunnel junction application, in particular to a noble metal wire thermal regulation magnetic tunnel junction, which is characterized in that a pinning layer is arranged on an antiferromagnetic layer, a barrier layer is arranged on the pinning layer, a free layer is arranged on the barrier layer, the barrier layer separates the pinning layer from the free layer, and a noble metal wire penetrates through the free layer along the interface direction between the barrier layer and the free layer. In the invention, the pinning layer, the barrier layer and the free layer form a magnetic tunnel junction. During application, the precious metal wire is connected with an external heat source, and a magnetic field acts on the device. The noble metal wire changes the temperature of the free layer, so that the spin state of the free layer is changed, the magnetoresistance of the magnetic tunnel junction is changed, and the purpose of regulating and controlling the magnetic tunnel junction is achieved. The method has the advantage of high magnetoresistance sensitivity for regulating and controlling the magnetic tunnel junction.

Description

technical field [0001] The invention relates to the application field of magnetic tunnel junctions, in particular to a magnetic tunnel junction thermally regulated by noble metal wires. Background technique [0002] The magnetic tunnel junction refers to a device composed of an insulating layer sandwiched between two ferromagnetic sheets. Magnetic tunnel junctions have important applications in the sensing of physical quantities such as highly sensitive current, voltage, humidity, and pressure. In the prior art, the magnetoresistance of the magnetic tunnel junction is not easy to control and cannot adapt to the detection of physical quantities in different ranges, which limits the further popularization and application of the magnetic tunnel junction in some physical quantity detections. Contents of the invention [0003] In order to solve the above problems, the present invention provides a thermally regulated magnetic tunnel junction of noble metal wires, including an a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08G01D5/12
Inventor 于孟今
Owner 于孟今
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