Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer level vacuum packaging of thermal imaging sensor

A device and sealing ring technology, applied in the field of wafer-level vacuum packaging of thermal imaging sensors, can solve the problems of bulky optical module components, infeasible infrared detectors, and low infrared detector efficiency.

Pending Publication Date: 2021-11-19
MERIDIAN INNOVATION PTE LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Mechanical components required for microbolometers add manufacturing complexity
This complexity increases the cost
The demands on the mechanical components of the microbolometer also make it difficult to produce small or compact devices
Additionally, conventional IR detectors use bulky optical module assemblies to focus to increase image clarity or resolution
This bulky optical module assembly makes infrared detectors impractical for compact or mobile applications
[0005] Furthermore, the fabrication of conventional infrared detectors is limited to inefficient, costly, and labor-intensive chip-scale packaging

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer level vacuum packaging of thermal imaging sensor
  • Wafer level vacuum packaging of thermal imaging sensor
  • Wafer level vacuum packaging of thermal imaging sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments relate generally to devices such as semiconductor devices or integrated circuits (ICs) embedded with micro-electromechanical systems (MEMS) modules. The IC is, for example, a Complementary Metal Oxide Semiconductor (CMOS) device. As for the MEMS module, it may include one or more pyroelectric based infrared (IR) detectors. The MEMS detector is compatible with CMOS process. The device can be incorporated into a product, such as a thermal imager. For example, a device may include a plurality of MEMS sensors that may be arranged to form a sensor array for a thermal imager. The sensors can be used in other types of applications such as single pixel or line array temperature or motion sensors.

[0023] Fabrication of the devices may involve forming features making up circuit components, such as transistors, resistors, capacitors, and MEMS sensors, on a substrate as part of a front-end-of-line (FEOL) process. As part of back-end-of-line (BEOL) processing, inte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
Login to View More

Abstract

A complementary metal oxide semiconductor (CMOS) device embedded with microelectromechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermosensors. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the device using wafer-level vacuum packaging techniques.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 62,827,861, filed April 2, 2019. This application cross-references U.S. Patent Application Serial No. 16 / 809,561, filed March 5, 2020, which is a continuation-in-part of co-pending U.S. Patent Application Serial No. 16 / 517,653, filed July 21, 2019, U.S. Patent Application Serial No. 16 / 517,653 is a continuation of U.S. Patent Application Serial No. 15 / 647,284, entitled Scalable Pyroelectric-Based Infrared Detectors, now U.S. Patent No. 10,403,674, filed July 12, 2017. This application also cross-references U.S. Patent Application Serial No. 16 / 224,782, filed December 18, 2018, which is a divisional application of U.S. Patent Application Serial No. 15 / 653,558, entitled Thermoelectric-based Infrared Detector, filed July 19, 2017, now U.S. Patent No. 10,199,424. This application further cross-references a PCT International Application filed on the same ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/12G01J5/04H01L31/0203B81C1/00
CPCG01J5/12G01J5/045H01L27/146H01L27/14618H01L27/14649H01L27/14625H01L27/14683B81B2201/0207B81C1/00246B81B7/0038B81B2207/012B81B2207/015
Inventor 伊凯·安德·奥贾克彼得·科普尼奇
Owner MERIDIAN INNOVATION PTE LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More