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Pattern transfer method

A pattern transfer and pattern technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limiting the application of direct writing technology

Pending Publication Date: 2021-11-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of the laser optical path and equipment, there is a relative limit in the output line width, which limits the application of direct writing technology

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Step 1. First, soak the substrate in pure water and absolute ethanol in sequence, and then blow it dry with high-pressure nitrogen after ultrasonic cleaning; secondly, heat the substrate on a hot plate at 150-200°C for 2-3 minutes. Remove moisture from the surface of the substrate; then, use plasma to clean the surface of the substrate; then, coat the substrate with the adhesion promoter AR300-80 so that the adhesion promoter AR300-80 completely covers the entire substrate.

[0047] Step 2. After cooling the substrate obtained in step 1 to room temperature, use AZ6112 photoresist solution to spray on the surface of the substrate obtained in step 1; accelerate the rotation of the substrate until the speed of the homogenizer reaches 2000 rpm; After a rotation speed of 2000 rpm, rotate at this speed for 30s;

[0048] Step 3. Place the substrate obtained in Step 2 on a hot plate, and perform temperature programming treatment according to the following procedure: first slowl...

Embodiment 2

[0062] Step 1. First, soak the substrate in pure water and absolute ethanol in sequence, and then blow it dry with high-pressure nitrogen after ultrasonic cleaning; secondly, heat the substrate on a hot plate at 150-200°C for 2-3 minutes. Remove moisture from the surface of the substrate; then, use plasma to clean the surface of the substrate; then, coat the substrate with the adhesion promoter AR300-80 so that the adhesion promoter AR300-80 completely covers the entire substrate.

[0063] Step 2. After cooling the substrate obtained in step 1 to room temperature, use AZ6112 photoresist solution to spray on the surface of the substrate obtained in step 1; accelerate the rotation of the substrate until the speed of the homogenizer reaches 2000 rpm; After a rotation speed of 2000 rpm, rotate at this speed for 30s;

[0064] Step 3. Place the substrate obtained in Step 2 on a hot plate, and perform temperature programming treatment according to the following procedure: first slowl...

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Abstract

The invention discloses a pattern transfer method, which comprises the following steps of: providing a substrate; coating a photoresist on the substrate; forming an underexposure area on the photoresist through laser irradiation, the underexposure area being in a trapezoid groove shape with the wide upper portion and the narrow lower portion; and developing, hardening, thinning and etching the photoresist in the underexposure region to obtain a target pattern.

Description

technical field [0001] The invention relates to the technical field of semiconductor micro-nano processing, in particular to a pattern transfer method. Background technique [0002] Laser direct writing technology is one of the important technical means of pattern transfer in semiconductor micro-nano processing technology. This technology uses a laser beam precisely controlled by a stepping motor to irradiate the substrate according to the designed path. During the process, the physical and chemical reactions involved in the laser energy lead to changes in the properties of the target substrate, thereby achieving the purpose of image transfer. In laser direct writing technology, the limit line width is an important technical parameter, which determines the working range of laser direct writing. Under standard process conditions, the limit line width of laser direct writing is limited by the write head. Conventional write heads have 0.6 μm, 1 μm, and 2 μm, that is, the spot...

Claims

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Application Information

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IPC IPC(8): H01L21/027
CPCH01L21/0275
Inventor 黄鹏赵咏梅谢亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI