Unlock instant, AI-driven research and patent intelligence for your innovation.

Light absorber integrated with dielectric optical waveguide and light absorption chip

A technology of optical waveguide and light absorption, applied in the direction of light guide, instruments, optics, etc., can solve problems such as affecting cost and affecting the yield rate of integrated optical components

Active Publication Date: 2021-12-03
SILITH TECH (SUZHOU) CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Germanium on silicon is widely used in integrated optical components and can be used as a photodetector, but the epitaxial growth of germanium will affect the yield of integrated optical components, thereby affecting the cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light absorber integrated with dielectric optical waveguide and light absorption chip
  • Light absorber integrated with dielectric optical waveguide and light absorption chip
  • Light absorber integrated with dielectric optical waveguide and light absorption chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Aiming at the problems existing in the prior art, Embodiment 1 of the present invention provides an optical absorber integrated with a dielectric optical waveguide, such as figure 1 As shown, it includes: a waveguide cladding 10 , a dielectric optical waveguide core 20 , and an absorbing material layer 30 .

[0026] Wherein, the waveguide cladding 10 surrounds the dielectric optical waveguide core 20 and the absorbing material layer 30; the dielectric optical waveguide core 20 includes a first end and a second end, and the radial dimension of the dielectric optical waveguide core 20 is from the first end to the The second end gradually becomes smaller; the absorbing material layer 30 is located on the upper layer of the core of the dielectric optical waveguide. in addition, figure 2 for figure 1 The top view, side view and cross-sectional view of the light absorber in , the top view is as figure 2 As shown in (a), the side view is as figure 2 As shown in (b), the...

Embodiment 2

[0035] Embodiment 2 is based on the solution of Embodiment 1, and its improvement is that the present invention also provides a light absorbing chip, which includes a polarization rotator and a light absorber, and the light absorber is as described in Embodiment 1. The polarization rotator is configured to rotate the input transverse electric (transverse electric, TE) mode polarized light by 90 degrees into transverse magnetic (transverse magnetic, TM) mode polarized light, and output the TM polarized light. a light absorber for absorbing the TM polarized light. Because the absorption efficiency of the TM polarized light of the light absorber is higher, the structure can absorb light waves more efficiently.

[0036] Such as Figure 8 (a) and Figure 8 (b) in (b) shows the simulated mode intensity profiles under the narrow SiN waveguide cross-section for TE and TM polarization, respectively; Figure 8 (c) in and Figure 8 (d) in (d) respectively show the simulated mode inte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a light absorber integrated with a dielectric optical waveguide and a light absorption chip, the light absorber comprises a waveguide cladding, a dielectric optical waveguide core and an absorption material layer, the waveguide cladding surrounds the dielectric optical waveguide core and the absorption material layer, the dielectric optical waveguide core comprises a first end part and a second end part, the radial size of the dielectric optical waveguide core is gradually reduced from the first end part to the second end part, the material of the absorbing material layer can be metal or silicon, and the absorbing material layer can be positioned on the upper layer of the dielectric optical waveguide core, or positioned on the side of the dielectric optical waveguide core, or positioned on the lower layer of the dielectric optical waveguide core; and the light absorber can reduce reverse reflection, so that light can be completely absorbed as far as possible.

Description

technical field [0001] The invention relates to the field of integrated optical components, in particular to an optical absorber and an optical absorbing chip of an integrated dielectric optical waveguide. Background technique [0002] Optical absorbers, also known as optical eliminators or optical sinks, are important components in integrated optical components. They are used to eliminate unwanted light with low return loss (reflection). In silicon-based integrated photonics technology, silicon (Si) waveguides are used as semiconductor waveguides, which can be doped by ion implantation process to form light absorbers, so that light can be eliminated by free carrier absorption. In addition to silicon waveguides, some dielectric optical waveguides (such as silicon dioxide, polymer, silicon nitride, aluminum nitride and other waveguides) are also widely used in integrated photonics technology. Dielectric waveguides generally cannot be doped to form absorbers like silicon wav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/122G02B6/125G02B6/126G02B6/134G02B5/00
CPCG02B6/122G02B6/125G02B6/126G02B6/1347G02B5/003G02B6/1228G02B2006/12126
Inventor 张星宇
Owner SILITH TECH (SUZHOU) CO LTD